Low-temperature polysilicon TFT with counter-doped lateral body terminal

2002 ◽  
Vol 38 (5) ◽  
pp. 255 ◽  
Author(s):  
Min-Cheol Lee ◽  
Juhn-Suk Yoo ◽  
Min-Koo Han
Keyword(s):  
Low Temperature ◽  
Lateral Body ◽  
Polysilicon Tft

Erratum: Circuit performance of low temperature CMOS polysilicon TFT operational amplifiers

1993 ◽  
Vol 29 (8) ◽  
pp. 726
Author(s):  
H.-G. Yang ◽  
P. Migliorato ◽  
C. Reita ◽  
S. Fluxman
Keyword(s):  
Low Temperature ◽  
Operational Amplifiers ◽  
Circuit Performance ◽  
Polysilicon Tft

Improved reliability of low-temperature polysilicon TFT by post-annealing gate oxide

2003 ◽  
Vol 24 (3) ◽  
pp. 174-176 ◽  
Author(s):  
Seok-Woo Lee ◽  
Eugene Kim ◽  
Sang-Soo Han ◽  
Hye Sun Lee ◽  
Duk-Chul Yun ◽  
...  
Keyword(s):  
Low Temperature ◽  
Gate Oxide ◽  
Post Annealing ◽  
Polysilicon Tft

Dynamic-logic PLA on low-temperature polysilicon TFT technology

2007 ◽  
Vol 43 (5) ◽  
pp. 271
Author(s):  
P. Oikonomakos ◽  
P.C. Paul ◽  
S.W. Moore ◽  
S.W.-B. Tam ◽  
H. Ebihara
Keyword(s):  
Low Temperature ◽  
Dynamic Logic ◽  
Polysilicon Tft

The Low Temperature Polysilicon TFT Technology for Manufacturing of Active Matrix Liquid Crystal Displays

1994 ◽  
Vol 345 ◽  
Author(s):  
Tatsuo Morita ◽  
Shuhei Tsuchimoto ◽  
Nobuo Hashizume
Keyword(s):  
Liquid Crystal ◽  
High Temperature ◽  
Low Temperature ◽  
Liquid Crystal Displays ◽  
Active Matrix ◽  
Applicable Range ◽  
Polysilicon Tft ◽  
Matrix Liquid ◽  
Potential Use ◽  
Wide Potential

AbstractThe amorphous silicon thin transistor (a-Si TIFT) has successfully industrialized the active matrix liquid crystal displays (AMLCDs), which would get a vast market on the basis of their wide potential use for displays. Whereas, the polysilicon TFT (p-Si TFT) also has been intensely investigated and intended to realize smarter AMLCDs, with monolithic peripheral circuits.In this paper, we will discuss the applicable range of low temperature p-Si TFTs compared with high temperature p-Si TFTs. After reviewing the materials which comprise low temperature p-Si TFTs, we will introduce our self aligned aluminum gate process which could allow fast addressing even in enlarged AMLCDs in the future.

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