Low-temperature polysilicon TFT with gate oxide grown by high-pressure oxidation

1991 ◽  
Vol 12 (7) ◽  
pp. 390-392 ◽  
Author(s):  
U. Mitra ◽  
J. Chen ◽  
B. Khan ◽  
E. Stupp
Keyword(s):  
High Pressure ◽  
Low Temperature ◽  
Gate Oxide ◽  
Pressure Oxidation ◽  
Polysilicon Tft ◽  
High Pressure Oxidation

The Effect of Ge Segregation on Oxidation of Si

1987 ◽  
Vol 105 ◽  
Author(s):  
E. C. Frey ◽  
N. R. Parikh ◽  
M. L. Swanson ◽  
M. Z. Numan ◽  
W. K. Chu
Keyword(s):  
High Pressure ◽  
Low Temperature ◽  
Epitaxial Layer ◽  
Atmospheric Pressure ◽  
Oxidation Rate ◽  
Oxidation Temperature ◽  
Pressure Oxidation ◽  
Enhanced Oxidation ◽  
High Pressure Oxidation

AbstractWe have studied oxidation of various Si samples including: Ge implanted Si, CVD and MBE grown Si(0.4–4% Ge) alloys, and MBE grown Si-Si(Ge) superlattices. The samples were oxidized in pyrogenic steam (800–1000°C, atmospheric pressure) and at low temperature and high pressure (740°C, 205 atm of dry O2). The oxidized samples were analyzed with RBS/channeling and ellipsometry.An enhanced oxidation rate was seen for all Ge doped samples, compared with rates for pure Si. The magnitude of the enhancement increased with decreasing oxidation temperature. For steam oxidations the Ge was segregated from the oxide and formed an epitaxial layer at the Si-SiO2 interface; the quality of the epitaxy was highest for the highest oxidation temperatures. For high pressure oxidation the Ge was trapped in the oxide and the greatest enhancement in oxidation rate (>100%) was observed.

Low temperature passivation of Si1−xGex alloys by dry high pressure oxidation

1994 ◽  
Vol 23 (9) ◽  
pp. 883-888 ◽  
Author(s):  
C. Caragianis ◽  
Y. Shigesato ◽  
D. C. Paine
Keyword(s):  
High Pressure ◽  
Low Temperature ◽  
Pressure Oxidation ◽  
High Pressure Oxidation

scholarly journals The C2H2 + NO2 reaction: Implications for high pressure oxidation of C2H2/NOx mixtures

2019 ◽  
Vol 37 (1) ◽  
pp. 469-476 ◽  
Author(s):  
Paul Marshall ◽  
Caroline Leung ◽  
Jorge Gimenez-Lopez ◽  
Christian T. Rasmussen ◽  
Hamid Hashemi ◽  
...  
Keyword(s):  
High Pressure ◽  
Pressure Oxidation ◽  
High Pressure Oxidation

Improved reliability of low-temperature polysilicon TFT by post-annealing gate oxide

2003 ◽  
Vol 24 (3) ◽  
pp. 174-176 ◽  
Author(s):  
Seok-Woo Lee ◽  
Eugene Kim ◽  
Sang-Soo Han ◽  
Hye Sun Lee ◽  
Duk-Chul Yun ◽  
...  
Keyword(s):  
Low Temperature ◽  
Gate Oxide ◽  
Post Annealing ◽  
Polysilicon Tft

Thin oxide films of silicon by high pressure oxidation

1982 ◽  
Vol 11 (5) ◽  
pp. 919-929 ◽  
Author(s):  
M. Hirayama ◽  
H. Miyoshi ◽  
N. Tsubouchi ◽  
H. Abe
Keyword(s):  
High Pressure ◽  
Oxide Films ◽  
Pressure Oxidation ◽  
Thin Oxide Films ◽  
Thin Oxide ◽  
High Pressure Oxidation

Development of an Automated High Pressure Oxidation System (HiPOS)

1998 ◽  
Vol 15 (1-2) ◽  
pp. 27-35
Author(s):  
K N Bhat ◽  
P R S Rao ◽  
J Vijayakumar ◽  
S Seetharaman ◽  
K Gopinath ◽  
...  
Keyword(s):  
High Pressure ◽  
Pressure Oxidation ◽  
Oxidation System ◽  
High Pressure Oxidation
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