The Low Temperature Polysilicon TFT Technology for Manufacturing of Active Matrix Liquid Crystal Displays

1994 ◽  
Vol 345 ◽  
Author(s):  
Tatsuo Morita ◽  
Shuhei Tsuchimoto ◽  
Nobuo Hashizume

AbstractThe amorphous silicon thin transistor (a-Si TIFT) has successfully industrialized the active matrix liquid crystal displays (AMLCDs), which would get a vast market on the basis of their wide potential use for displays. Whereas, the polysilicon TFT (p-Si TFT) also has been intensely investigated and intended to realize smarter AMLCDs, with monolithic peripheral circuits.In this paper, we will discuss the applicable range of low temperature p-Si TFTs compared with high temperature p-Si TFTs. After reviewing the materials which comprise low temperature p-Si TFTs, we will introduce our self aligned aluminum gate process which could allow fast addressing even in enlarged AMLCDs in the future.

2011 ◽  
Vol 78 (7) ◽  
pp. 444 ◽  
Author(s):  
V. A. Bol’shukhin ◽  
V. S. Ilyasov ◽  
N. P. Soshchin ◽  
V. N. Ulasyuk

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