Effects of trap-state density reduction by plasma hydrogenation in low-temperature polysilicon TFT

1989 ◽  
Vol 10 (3) ◽  
pp. 123-125 ◽  
Author(s):  
I.-W. Wu ◽  
A.G. Lewis ◽  
T.-Y. Huang ◽  
A. Chiang
Keyword(s):  
Low Temperature ◽  
State Density ◽  
Trap State ◽  
Density Reduction ◽  
Polysilicon Tft ◽  
Plasma Hydrogenation

Erratum: Circuit performance of low temperature CMOS polysilicon TFT operational amplifiers

1993 ◽  
Vol 29 (8) ◽  
pp. 726
Author(s):  
H.-G. Yang ◽  
P. Migliorato ◽  
C. Reita ◽  
S. Fluxman
Keyword(s):  
Low Temperature ◽  
Operational Amplifiers ◽  
Circuit Performance ◽  
Polysilicon Tft

scholarly journals Demonstration of AlGaN/GaN MISHEMT on Si with Low-Temperature Epitaxy Grown AlN Dielectric Gate

Electronics ◽  
2020 ◽  
Vol 9 (11) ◽  
pp. 1858
Author(s):  
Matthew Whiteside ◽  
Subramaniam Arulkumaran ◽  
Yilmaz Dikme ◽  
Abhinay Sandupatla ◽  
Geok Ing Ng
Keyword(s):  
Low Temperature ◽  
Gate Dielectric ◽  
Drain Current ◽  
High Electron Mobility Transistors ◽  
Interface State ◽  
State Density ◽  
High Electron ◽  
Gate Leakage ◽  
Annealing Effects ◽  
Low Temperature Epitaxy

AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MISHEMT) with a low-temperature epitaxy (LTE)-grown single crystalline AlN gate dielectric were demonstrated for the first time and the post-gate annealing effects at 400 °C were studied. The as-deposited LTE-AlN MISHEMT showed a maximum drain current (IDmax) of 708 mA/mm at a gate bias of 4 V and a maximum extrinsic transconductance (gmmax) of 129 mS/mm. The 400 °C annealed MISHEMT exhibited an increase of 15% in gmmax, an order of magnitude reduction in reverse gate leakage and about a 3% suppression of drain current (ID) collapse. The increase of gmmax by post-gate annealing is consistent with the increase of 2DEG mobility. The suppression of ID collapse and the reduction of gate leakage current is attributed to the reduction of interface state density (5.0 × 1011 cm−2eV−1) between the AlN/GaN interface after post-gate annealing at 400 °C. This study demonstrates that LTE grown AlN is a promising alternate material as gate dielectric for GaN-based MISHEMT application.

scholarly journals Nanoscale control of grain boundary potential barrier, dopant density and filled trap state density for higher efficiency perovskite solar cells

InfoMat ◽  
2019 ◽  
Vol 2 (2) ◽  
pp. 409-423 ◽  
Author(s):  
Behzad Bahrami ◽  
Sally Mabrouk ◽  
Nirmal Adhikari ◽  
Hytham Elbohy ◽  
Ashim Gurung ◽  
...  
Keyword(s):  
Solar Cells ◽  
Grain Boundary ◽  
Potential Barrier ◽  
Perovskite Solar Cells ◽  
State Density ◽  
Trap State ◽  
Boundary Potential

Improved reliability of low-temperature polysilicon TFT by post-annealing gate oxide

2003 ◽  
Vol 24 (3) ◽  
pp. 174-176 ◽  
Author(s):  
Seok-Woo Lee ◽  
Eugene Kim ◽  
Sang-Soo Han ◽  
Hye Sun Lee ◽  
Duk-Chul Yun ◽  
...  
Keyword(s):  
Low Temperature ◽  
Gate Oxide ◽  
Post Annealing ◽  
Polysilicon Tft

Characterizations of Ultra-thin Dielectrics Grown by Microwave Afterglow O2/N2O Plasma Oxidation at Low Temperature with Rapid Thermal Annealing

1995 ◽  
Vol 387 ◽  
Author(s):  
Po-ching Chen ◽  
Klaus Yung-jane Hsu ◽  
Joseph J. Loferski ◽  
Huey-liang Hwang
Keyword(s):  
Low Temperature ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Photoelectron Spectroscopy ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Plasma Oxidation ◽  
X Ray ◽  
Thin Dielectrics

AbstractMicrowave afterglow plasma oxidation at a low temperature (600 °C ) and rapid thermal annealing (RTA) were combined to grow high quality ultra-thin dielectrics. This new approach has a low thermal budget. The mid-gap interface state density of oxides pretreated in N2O plasma was decreased to about 5×1010 cm−2eV−1 after rapid thermal annealing at 950 °C.It was found that RTA is very effective for relieving the oxide stress and reducing the interface state density. Nitrogen incorporated in oxides by the N2O plasma pretreatment of the Si surface helped to reduce the interface state density. Microstructures of ultra-thin oxide grown by microwave afterglow oxidation with or without RTA were revealed by extended-X-ray-absorption-finestructure (EXAFS) and X-ray photoelectron spectroscopy (XPS) analysis.

scholarly journals An Environmentally Stable Organic–Inorganic Hybrid Perovskite Containing Py Cation with Low Trap-State Density

Crystals ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 272
Author(s):  
Alex Fan Xu ◽  
Ryan Taoran Wang ◽  
Lory Wenjuan Yang ◽  
Elton Enchong Liu ◽  
Gu Xu
Keyword(s):  
State Density ◽  
Hexagonal Structure ◽  
Environmental Stability ◽  
Trap State ◽  
X Ray Diffraction ◽  
Lead Iodide ◽  
Casting Method ◽  
Hybrid Perovskite ◽  
Stable Hybrid ◽  
Space Charge Limited Currents

The commonly-employed methylammonium-based perovskites are environmentally unstable, which limits their commercialization. To resolve this problem, a stable hybrid perovskite, pyrrolidinium lead iodide (PyPbI3), was synthesized successfully via a simple drop casting method. The formed PyPbI3 exhibited a hexagonal structure. It presented not only excellent phase stability, but also low trap-state density, as confirmed via the X-ray diffraction and space-charge-limited currents measurements. This novel perovskite may be applicable to perovskite photovoltaics to improve their environmental stability.

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