High CW power narrow-spectral width (< 1.5 A) 980 nm broad-stripe distributed-feedback diode lasers

2000 ◽  
Vol 36 (11) ◽  
pp. 954 ◽  
Author(s):  
C.H. Chang ◽  
T. Earles ◽  
D. Botez
Keyword(s):  
Diode Lasers ◽  
Spectral Width ◽  
Distributed Feedback

Integrated Distributed Feedback Laser and Optical Amplifier

1991 ◽  
Vol 240 ◽  
Author(s):  
N. K. Dutta ◽  
J. Lopata ◽  
R. Logan ◽  
T. Tanbun-Ek
Keyword(s):  
Active Region ◽  
Spectral Width ◽  
Optical Amplifier ◽  
Distributed Feedback ◽  
Performance Characteristics ◽  
Distributed Feedback Laser ◽  
Electrical Isolation ◽  
Current Confinement ◽  
Dfb Laser ◽  
And Performance

ABSTRACTThe fabrication and performance characteristics of an integrated distributed feedback (DFB) laser and optical amplifier structure are described. The structure utilizes semi-insulating Fe doped InP layers for current confinement to the active region, electrical isolation between the two sections and for lateral index guiding. The amplified output has a slope of 1 mW/mA of laser current with the amplifier biased at 150 mA which is a factor of 5 larger than that for a typical laser. The laser emits near 1.55 μm and the spectral width under modulation of the amplified output is considerably smaller than that for a DFB laser for the same on/off ratio.

scholarly journals Spectral Linewidth vs. Front Facet Reflectivity of 780 nm DFB Diode Lasers at High Optical Output Power

2018 ◽  
Vol 8 (7) ◽  
pp. 1104 ◽  
Author(s):  
Thanh-Phuong Nguyen ◽  
Hans Wenzel ◽  
Olaf Brox ◽  
Frank Bugge ◽  
Peter Ressel ◽  
...  
Keyword(s):  
Output Power ◽  
Diode Lasers ◽  
Substantial Reduction ◽  
Distributed Feedback ◽  
Optical Output ◽  
Spectral Linewidth ◽  
Facet Reflectivity ◽  
Simulation Results ◽  
Front Facet

The influence of the front facet reflectivity on the spectral linewidth of high power DFB (distributed feedback) diode lasers emitting at 780 nm has been investigated theoretically and experimentally. Characterization of lasers at various front facet reflections showed substantial reduction of the linewidth. This behavior is in reasonable agreement with simulation results. A minimum linewidth of 8 kHz was achieved at an output power of 85 mW with the laser featuring a front facet reflectivity of 30%. The device with a front facet reflectivity of 5% reached the same linewidth value at an output power of 290 mW.

Embossed monomode single heterostructure distributed feedback lead chalcogenide diode lasers

1992 ◽  
Vol 28 (23) ◽  
pp. 2180 ◽  
Author(s):  
J. John ◽  
A. Fach ◽  
H. Böttner ◽  
M. Tacke
Keyword(s):  
Diode Lasers ◽  
Distributed Feedback ◽  
Lead Chalcogenide

scholarly journals cw operation of distributed‐feedback GaAs‐GaAlAs diode lasers at temperatures up to 300 K

1975 ◽  
Vol 27 (7) ◽  
pp. 403-405 ◽  
Author(s):  
M. Nakamura ◽  
K. Aiki ◽  
J. Umeda ◽  
A. Yariv
Keyword(s):  
Diode Lasers ◽  
Distributed Feedback ◽  
Cw Operation

scholarly journals GaAs–Ga1−xAlxAs double‐heterostructure distributed‐feedback diode lasers

1974 ◽  
Vol 25 (9) ◽  
pp. 487-488 ◽  
Author(s):  
M. Nakamura ◽  
K. Aiki ◽  
Jun‐ichi Umeda ◽  
A. Yariv ◽  
H. W. Yen ◽  
...  
Keyword(s):  
Diode Lasers ◽  
Distributed Feedback ◽  
Double Heterostructure

scholarly journals Measurements of NH_3 and CO_2 with distributed-feedback diode lasers near 20 µm in bioreactor vent gases

2001 ◽  
Vol 40 (24) ◽  
pp. 4395 ◽  
Author(s):  
Michael E. Webber ◽  
Ricardo Claps ◽  
Florian V. Englich ◽  
Frank K. Tittel ◽  
Jay B. Jeffries ◽  
...  
Keyword(s):  
Diode Lasers ◽  
Distributed Feedback
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