Embossed monomode single heterostructure distributed feedback lead chalcogenide diode lasers

1992 ◽  
Vol 28 (23) ◽  
pp. 2180 ◽  
Author(s):  
J. John ◽  
A. Fach ◽  
H. Böttner ◽  
M. Tacke
Keyword(s):  
Diode Lasers ◽  
Distributed Feedback ◽  
Lead Chalcogenide

scholarly journals Spectral Linewidth vs. Front Facet Reflectivity of 780 nm DFB Diode Lasers at High Optical Output Power

2018 ◽  
Vol 8 (7) ◽  
pp. 1104 ◽  
Author(s):  
Thanh-Phuong Nguyen ◽  
Hans Wenzel ◽  
Olaf Brox ◽  
Frank Bugge ◽  
Peter Ressel ◽  
...  
Keyword(s):  
Output Power ◽  
Diode Lasers ◽  
Substantial Reduction ◽  
Distributed Feedback ◽  
Optical Output ◽  
Spectral Linewidth ◽  
Facet Reflectivity ◽  
Simulation Results ◽  
Front Facet

The influence of the front facet reflectivity on the spectral linewidth of high power DFB (distributed feedback) diode lasers emitting at 780 nm has been investigated theoretically and experimentally. Characterization of lasers at various front facet reflections showed substantial reduction of the linewidth. This behavior is in reasonable agreement with simulation results. A minimum linewidth of 8 kHz was achieved at an output power of 85 mW with the laser featuring a front facet reflectivity of 30%. The device with a front facet reflectivity of 5% reached the same linewidth value at an output power of 290 mW.

scholarly journals cw operation of distributed‐feedback GaAs‐GaAlAs diode lasers at temperatures up to 300 K

1975 ◽  
Vol 27 (7) ◽  
pp. 403-405 ◽  
Author(s):  
M. Nakamura ◽  
K. Aiki ◽  
J. Umeda ◽  
A. Yariv
Keyword(s):  
Diode Lasers ◽  
Distributed Feedback ◽  
Cw Operation

scholarly journals GaAs–Ga1−xAlxAs double‐heterostructure distributed‐feedback diode lasers

1974 ◽  
Vol 25 (9) ◽  
pp. 487-488 ◽  
Author(s):  
M. Nakamura ◽  
K. Aiki ◽  
Jun‐ichi Umeda ◽  
A. Yariv ◽  
H. W. Yen ◽  
...  
Keyword(s):  
Diode Lasers ◽  
Distributed Feedback ◽  
Double Heterostructure

Preparation and Applications of Lead Chalcogenide Diode Lasers

1986 ◽  
Vol 90 ◽  
Author(s):  
Dale L. Partin
Keyword(s):  
Active Region ◽  
Fiber Optics ◽  
Diode Lasers ◽  
Tunable Laser ◽  
Alloy System ◽  
High Energy ◽  
Cryogenic Cooling ◽  
Lead Chalcogenide ◽  
Leakage Currents ◽  
The Status

ABSTRACTLead chalcogenide diode lasers are useful for spectroscopic and fiber optics applications in the mid-infrared (2.5-30 μm) wavelength range. These devices have previously required cryogenic cooling (<100 K) for CW operation. This limitation has been overcome through the use of a new, lattice-matched alloy system, Pb1-xEuxSeyTe1-y as well as the introduction of advanced, quantum well active region device structures grown by molecular beam epitaxy (MBE). Operating temperatures have been increased to 175 K CW (at 4.4 μm) and to 270 K pulsed (at 3.9 μm). Thermal leakage currents out of the device active region appear to be limiting device performance. This has led to the study of band offsets in PbEuSeTe/PbTe heterojunctions as well as to exploration of alternative high energy band gap alloys of PbTe with Ge, Yb, Ca, Sr, and Ba. The status of this work and examples of ultrahigh resolution studies done with these tunable laser sources will be included.

scholarly journals Measurements of NH_3 and CO_2 with distributed-feedback diode lasers near 20 µm in bioreactor vent gases

2001 ◽  
Vol 40 (24) ◽  
pp. 4395 ◽  
Author(s):  
Michael E. Webber ◽  
Ricardo Claps ◽  
Florian V. Englich ◽  
Frank K. Tittel ◽  
Jay B. Jeffries ◽  
...  
Keyword(s):  
Diode Lasers ◽  
Distributed Feedback
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