scholarly journals cw operation of distributed‐feedback GaAs‐GaAlAs diode lasers at temperatures up to 300 K

1975 ◽  
Vol 27 (7) ◽  
pp. 403-405 ◽  
Author(s):  
M. Nakamura ◽  
K. Aiki ◽  
J. Umeda ◽  
A. Yariv
Keyword(s):  
Diode Lasers ◽  
Distributed Feedback ◽  
Cw Operation

CW operation of widely and continuously tunable micromachined-coupled-cavity diode lasers

1986 ◽  
Vol 22 (17) ◽  
pp. 919 ◽  
Author(s):  
R.K. Defreez ◽  
J. Puretz ◽  
R.A. Elliott ◽  
J. Orloff ◽  
L.W. Swanson
Keyword(s):  
Diode Lasers ◽  
Cw Operation ◽  
Coupled Cavity

V-8 MBE homostructure PbTe diode lasers with CW operation up to 100 K

1977 ◽  
Vol 24 (9) ◽  
pp. 1214-1214 ◽  
Author(s):  
J.N. Walpole ◽  
S.H. Groves ◽  
T.C. Harman
Keyword(s):  
Diode Lasers ◽  
Cw Operation

scholarly journals Spectral Linewidth vs. Front Facet Reflectivity of 780 nm DFB Diode Lasers at High Optical Output Power

2018 ◽  
Vol 8 (7) ◽  
pp. 1104 ◽  
Author(s):  
Thanh-Phuong Nguyen ◽  
Hans Wenzel ◽  
Olaf Brox ◽  
Frank Bugge ◽  
Peter Ressel ◽  
...  
Keyword(s):  
Output Power ◽  
Diode Lasers ◽  
Substantial Reduction ◽  
Distributed Feedback ◽  
Optical Output ◽  
Spectral Linewidth ◽  
Facet Reflectivity ◽  
Simulation Results ◽  
Front Facet

The influence of the front facet reflectivity on the spectral linewidth of high power DFB (distributed feedback) diode lasers emitting at 780 nm has been investigated theoretically and experimentally. Characterization of lasers at various front facet reflections showed substantial reduction of the linewidth. This behavior is in reasonable agreement with simulation results. A minimum linewidth of 8 kHz was achieved at an output power of 85 mW with the laser featuring a front facet reflectivity of 30%. The device with a front facet reflectivity of 5% reached the same linewidth value at an output power of 290 mW.

1.3 µm CW Operation of GaInAsP/InP DH Diode Lasers at Room Temperature

1977 ◽  
Vol 16 (7) ◽  
pp. 1273-1274 ◽  
Author(s):  
Kunishige Oe ◽  
Seigo Ando ◽  
Koichi Sugiyama
Keyword(s):  
Room Temperature ◽  
Diode Lasers ◽  
Cw Operation

CW operation of monolithic arrays of surface-emitting AlGaAs diode lasers with dry-etched vertical facets and parabolic deflecting mirrors

1993 ◽  
Vol 5 (10) ◽  
pp. 1146-1149 ◽  
Author(s):  
J.P. Donnelly ◽  
W.D. Goodhue ◽  
C.A. Wang ◽  
R.J. Bailey ◽  
G.A. Lincoln ◽  
...  
Keyword(s):  
Diode Lasers ◽  
Cw Operation

Embossed monomode single heterostructure distributed feedback lead chalcogenide diode lasers

1992 ◽  
Vol 28 (23) ◽  
pp. 2180 ◽  
Author(s):  
J. John ◽  
A. Fach ◽  
H. Böttner ◽  
M. Tacke
Keyword(s):  
Diode Lasers ◽  
Distributed Feedback ◽  
Lead Chalcogenide

High power cw operation of phased array diode lasers with diffraction limited output beam

1985 ◽  
Vol 47 (11) ◽  
pp. 1134-1136 ◽  
Author(s):  
D. F. Welch ◽  
D. Scifres ◽  
P. Cross ◽  
H. Kung ◽  
W. Streifer ◽  
...  
Keyword(s):  
High Power ◽  
Phased Array ◽  
Diode Lasers ◽  
Output Beam ◽  
Cw Operation ◽  
Limited Output

Room-temperature CW operation of 1.3 μm distributed-feedback GaInAsP/InP lasers

1982 ◽  
Vol 18 (20) ◽  
pp. 857 ◽  
Author(s):  
Y. Uematsu ◽  
H. Okuda ◽  
J. Kinoshita
Keyword(s):  
Room Temperature ◽  
Distributed Feedback ◽  
Cw Operation
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