scholarly journals GaAs–Ga1−xAlxAs double‐heterostructure distributed‐feedback diode lasers

1974 ◽  
Vol 25 (9) ◽  
pp. 487-488 ◽  
Author(s):  
M. Nakamura ◽  
K. Aiki ◽  
Jun‐ichi Umeda ◽  
A. Yariv ◽  
H. W. Yen ◽  
...  
1974 ◽  
Author(s):  
M. Nakamura ◽  
K. Aiki ◽  
J. Umeda ◽  
A. Yariv ◽  
H. W. Yen ◽  
...  

2018 ◽  
Vol 8 (7) ◽  
pp. 1104 ◽  
Author(s):  
Thanh-Phuong Nguyen ◽  
Hans Wenzel ◽  
Olaf Brox ◽  
Frank Bugge ◽  
Peter Ressel ◽  
...  

The influence of the front facet reflectivity on the spectral linewidth of high power DFB (distributed feedback) diode lasers emitting at 780 nm has been investigated theoretically and experimentally. Characterization of lasers at various front facet reflections showed substantial reduction of the linewidth. This behavior is in reasonable agreement with simulation results. A minimum linewidth of 8 kHz was achieved at an output power of 85 mW with the laser featuring a front facet reflectivity of 30%. The device with a front facet reflectivity of 5% reached the same linewidth value at an output power of 290 mW.


1974 ◽  
Author(s):  
K. J. Sleger ◽  
G. F. McLane ◽  
U. Strom

1992 ◽  
Vol 28 (23) ◽  
pp. 2180 ◽  
Author(s):  
J. John ◽  
A. Fach ◽  
H. Böttner ◽  
M. Tacke

1996 ◽  
Vol 37 (4) ◽  
pp. 439-443 ◽  
Author(s):  
Z. Feit ◽  
J. Fuchs ◽  
D. Kostyk ◽  
W. Jalenak

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