Visible-blind ultraviolet photodetectors based on GaN p-n junctions

1995 ◽  
Vol 31 (20) ◽  
pp. 1781-1782 ◽  
Author(s):  
Q. Chen ◽  
J.W. Yang ◽  
M. Asif Khan ◽  
C.J. Sun
Keyword(s):  
Ultraviolet Photodetectors ◽  
Visible Blind

scholarly journals Highly Efficient Visible-Blind Organic Ultraviolet Photodetectors

2005 ◽  
Vol 17 (20) ◽  
pp. 2489-2493 ◽  
Author(s):  
H.-W. Lin ◽  
S.-Y. Ku ◽  
H.-C. Su ◽  
C.-W. Huang ◽  
Y.-T. Lin ◽  
...  
Keyword(s):  
Highly Efficient ◽  
Ultraviolet Photodetectors ◽  
Visible Blind

Solution‐Processed Visible‐Blind Ultraviolet Photodetectors with Nanosecond Response Time and High Detectivity

2019 ◽  
Vol 7 (19) ◽  
pp. 1900506 ◽  
Author(s):  
Zhaolai Chen ◽  
Chenglong Li ◽  
Ayan A. Zhumekenov ◽  
Xiaopeng Zheng ◽  
Chen Yang ◽  
...  
Keyword(s):  
Response Time ◽  
Solution Processed ◽  
Ultraviolet Photodetectors ◽  
Visible Blind

Effects of thermal treatment on the Mg x Zn 1−x O films and fabrication of visible-blind and solar-blind ultraviolet photodetectors

2014 ◽  
Vol 60 ◽  
pp. 46-50 ◽  
Author(s):  
Chunguang Tian ◽  
Dayong Jiang ◽  
Zhendong Tan ◽  
Qian Duan ◽  
Rusheng Liu ◽  
...  
Keyword(s):  
Thermal Treatment ◽  
Solar Blind ◽  
Ultraviolet Photodetectors ◽  
Visible Blind

scholarly journals Hexagonal boron nitride pattern embedded in AlN template layer for visible-blind ultraviolet photodetectors

2017 ◽  
Vol 7 (5) ◽  
pp. 1463 ◽  
Author(s):  
Do Trong Thanh ◽  
Joo Jin ◽  
Kang Bok Ko ◽  
Beo Deul Ryu ◽  
Min Han ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
Ultraviolet Photodetectors ◽  
Visible Blind

scholarly journals Low temperature-processed ZnO thin films for p–n junction-based visible-blind ultraviolet photodetectors

RSC Advances ◽  
2018 ◽  
Vol 8 (65) ◽  
pp. 37365-37374 ◽  
Author(s):  
Hanna B. ◽  
Surendran K. P. ◽  
Narayanan Unni K. N.
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Hole Transport ◽  
Transport Layer ◽  
Zno Thin Films ◽  
Hole Transport Layer ◽  
Ultraviolet Photodetectors ◽  
Visible Blind

Visible-blind ultraviolet photodetectors have been fabricated with a p–n junction based on ZnO and an organic hole transport layer.

Visible-blind ultraviolet photodetectors based on ZnMgBeSe Schottky barrier diodes

2001 ◽  
Vol 78 (26) ◽  
pp. 4190-4192 ◽  
Author(s):  
F. Vigué ◽  
E. Tournié ◽  
J.-P. Faurie ◽  
E. Monroy ◽  
F. Calle ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Schottky Barrier Diodes ◽  
Ultraviolet Photodetectors ◽  
Visible Blind

Mott-type MgxZn1-xO-based visible-blind ultraviolet photodetectors with active anti-reflection layer

2013 ◽  
Vol 102 (23) ◽  
pp. 231122 ◽  
Author(s):  
X. H. Xie ◽  
Z. Z. Zhang ◽  
B. H. Li ◽  
S. P. Wang ◽  
M. M. Jiang ◽  
...  
Keyword(s):  
Ultraviolet Photodetectors ◽  
Visible Blind

scholarly journals Oxidized Nano-Porous-Silicon Buffer Layers for Suppressing the Visible Photoresponsivity of ZnO Ultraviolet Photodetectors on Si Substrates

2014 ◽  
Vol 2014 ◽  
pp. 1-4
Author(s):  
Kuen-Hsien Wu
Keyword(s):  
Oxidation Process ◽  
Uv Light ◽  
Low Cost ◽  
Buffer Layers ◽  
Electrochemical Anodization ◽  
Current Ratio ◽  
Uv Photodetectors ◽  
Si Substrates ◽  
Ultraviolet Photodetectors ◽  
Visible Blind

This paper demonstrated the fabrication and optoelectronic characteristics of ZnO ultraviolet (UV) photodetectors fabricated on Si substrates with oxidized nano-porous-Si (ONPS) buffer layers. ONPS layers were prepared on the surfaces of Si substrates by use of an electrochemical anodization technique following a rapid-thermal-oxidation process. Experimental results indicated that application of ONPS buffer layers not only improved the crystallinty of the deposited ZnO thin films but also greatly restricted the visible-to-infrared photoresponse that was generated from the light absorption of Si substrates. The developed ZnO-on-ONPS photodiodes achieved high photoresponsivity for the incident UV light of 300 ∼ 400 nm and got a large photo-to-dark current ratio up to 104 at wavelength of 375 nm under a bias of 5 V. Therefore, ZnO on ONPS provides a highly potential approach for the development of low-cost visible-blind UV photodetectors.

Sign in / Sign up

Export Citation Format

Share Document