scholarly journals Low temperature-processed ZnO thin films for p–n junction-based visible-blind ultraviolet photodetectors

RSC Advances ◽  
2018 ◽  
Vol 8 (65) ◽  
pp. 37365-37374 ◽  
Author(s):  
Hanna B. ◽  
Surendran K. P. ◽  
Narayanan Unni K. N.

Visible-blind ultraviolet photodetectors have been fabricated with a p–n junction based on ZnO and an organic hole transport layer.

Energies ◽  
2020 ◽  
Vol 13 (4) ◽  
pp. 962 ◽  
Author(s):  
Zahoor Ul Islam ◽  
Muhammad Tahir ◽  
Waqar Adil Syed ◽  
Fakhra Aziz ◽  
Fazal Wahab ◽  
...  

Herein, we report thin films’ characterizations and photovoltaic properties of an organic semiconductor zinc phthalocyanine (ZnPc). To study the former, a 100 nm thick film of ZnPc is thermally deposited on quartz glass by using vacuum thermal evaporator at 1.5 × 10−6 mbar. Surface features of the ZnPc film are studied by using scanning electron microscope (SEM) with in situ energy dispersive x-ray spectroscopy (EDS) analysis and atomic force microscope (AFM) which reveal uniform film growth, grain sizes and shapes with slight random distribution of the grains. Ultraviolet-visible (UV-vis) and Fourier Transform Infrared (FTIR) spectroscopies are carried out of the ZnPc thin films to measure its optical bandgap (1.55 eV and 3.08 eV) as well as to study chemical composition and bond-dynamics. To explore photovoltaic properties of ZnPc, an Ag/ZnPc/PEDOT:PSS/ITO cell is fabricated by spin coating a 20 nm thick film of hole transport layer (HTL)—poly-(3,4-ethylenedioxythiophene) poly(styrene sulfonic acid) (PEDOT:PSS)—on indium tin oxide (ITO) substrate followed by thermal evaporation of a 100 nm layer of ZnPc and 50 nm silver (Ag) electrode. Current-voltage (I-V) properties of the fabricated device are measured in dark as well as under illumination at standard testing conditions (STC), i.e., 300 K, 100 mW/cm2 and 1.5 AM global by using solar simulator. The key device parameters such as ideality factor (n), barrier height ( ϕ b ), junction/interfacial resistance (Rs) and forward current rectification of the device are measured in the dark which exhibit the formation of depletion region. The Ag/ZnPc/PEDOT:PSS/ITO device demonstrates good photovoltaic characteristics by offering 0.48 fill factor (FF) and 1.28 ± 0.05% power conversion efficiency (PCE), η.


2019 ◽  
Vol 3 (6) ◽  
pp. 1418-1426 ◽  
Author(s):  
Marta Ruscello ◽  
Tanmoy Sarkar ◽  
Artem Levitsky ◽  
Giovanni Maria Matrone ◽  
Nikolaos Droseros ◽  
...  

Low temperature NiOx is achieved using PEO as sacrificial ink additive to make hole transport layer for solar cells.


1997 ◽  
Vol 488 ◽  
Author(s):  
X. Linda Chen ◽  
Samson A. Jenekhe

AbstractTwo series of new electroactive and photoactive coil-rod-coil and rod-coil-rod triblock copolymers, poly (pentadecamethylene carboxester)-block - poly(p-phenylene benzobisthiazole) - block - poly (pentadecamethylene carboxester) (1), and poly(2,6-benzoxazole)-block poly(benzobisthiazole decamethylene)-block-poly(2,6-benzoxazole) (2), were synthesized, characterized, and used to investigate the self-assembly properties of rod-coil block copolymers. The progressive band narrowing of the absorption spectrum of thin films of 1 confirmed the effects of spatial confinement with increasing coil block size. Photoluminescence studies of thin films of 1 and 2 showed the effects of self-organization, annealing at 110 °C, block lengths, and composition on photophysical properties. Bilayer photoreceptors consisting of a layer of block copolymer as the charge generation layer and a layer of tris(p-tolyl)amine dispersed in polycarbonate as a trap-free hole transport layer were oberved to have high quantum efficiency, good photosensitivity and good dark decay.


RSC Advances ◽  
2015 ◽  
Vol 5 (115) ◽  
pp. 94752-94758 ◽  
Author(s):  
Tang Liu ◽  
Lijian Zuo ◽  
Tao Ye ◽  
Jiake Wu ◽  
Guobiao Xue ◽  
...  

We successfully employ low temperature processed conductive polymer PH1000 as an alternative electrode of ITO to fabricate HTL-free PSCs. The best device shows efficiency up to 9.31%, providing a much simpler architecture for the application of PSC.


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