Visible-blind and flexible metal-semiconductor-metal ultraviolet photodetectors based on sub-10 nm thick silver interdigital electrodes

2021 ◽  
Author(s):  
Xie He ◽  
Liu Yang ◽  
Sailing He
Keyword(s):  
Interdigital Electrodes ◽  
Metal Semiconductor Metal ◽  
Flexible Metal ◽  
Ultraviolet Photodetectors ◽  
Visible Blind

Visible-Blind Metal-Semiconductor-Metal Structured Deep-Ultraviolet Photodetectors Using Single-Crystalline Diamond Thin Film

2007 ◽  
Vol 546-549 ◽  
pp. 1759-1762
Author(s):  
Mei Yong Liao ◽  
Yasuo Koide
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Visible Light ◽  
Persistent Photoconductivity ◽  
Single Crystalline ◽  
Diamond Thin Film ◽  
Metal Semiconductor Metal ◽  
Deep Ultraviolet ◽  
Ultraviolet Photodetectors ◽  
Visible Blind

Metal-semiconductor-metal (MSM) planar photodiodes and photoconductors were fabricated on unintentionally doped homoepitaxial diamond thin films deposited on Ib and IIa-type diamond substrated. The MSM photoconductor on the epilayer grown on the Ib-type substrate exhibits the highest discrimination ratio up to 108 between 210 nm and visible light and a photocurrent gain around 33 at 220 nm. The persistent photoconductivity is rather week for such kind of photoconductor.

Ultraviolet Photodetectors Based on MgZnO Thin Films

2014 ◽  
Vol 852 ◽  
pp. 291-295
Author(s):  
Man Zhao ◽  
Da Yong Jiang ◽  
Wen Jing Liu ◽  
Guang Yang ◽  
De Jun Li
Keyword(s):  
Radio Frequency Magnetron Sputtering ◽  
Electrical And Optical Properties ◽  
Interelectrode Spacing ◽  
Rejection Ratio ◽  
Ultraviolet Detectors ◽  
Interdigital Electrodes ◽  
Metal Semiconductor Metal ◽  
Order Of Magnitude ◽  
Ultraviolet Photodetectors ◽  
Msm Photodetectors

In recent years, MgZnO alloy becomes one of the most suitable materials for the fabrication of ultraviolet detectors. In this paper, we have fabricated three metal semiconductor metal (MSM) photodetectors on Mg0.42Zn0.58O film grown by radio frequency magnetron sputtering. The interdigital electrodes are 500 um long and 5 um wide with an interelectrode spacing 2, 5 and 10 um, respectively. The structural, electrical and optical properties of epilayers were characterized by various techniques. At 5 V bias, a peak responsivity of 1.09 mA/W was achieved at 283 nm for the device with 2 um interelectrode spacing. The peak responsivity at 283 nm increased with the reduction of the finger pitch for three devices and the ultraviolet-visible rejection ratio (R283 nm/R400 nm) was more than one order of magnitude at 5 V bias.

scholarly journals Highly Efficient Visible-Blind Organic Ultraviolet Photodetectors

2005 ◽  
Vol 17 (20) ◽  
pp. 2489-2493 ◽  
Author(s):  
H.-W. Lin ◽  
S.-Y. Ku ◽  
H.-C. Su ◽  
C.-W. Huang ◽  
Y.-T. Lin ◽  
...  
Keyword(s):  
Highly Efficient ◽  
Ultraviolet Photodetectors ◽  
Visible Blind

Effects of radiation and temperature on gallium nitride (GaN) metal-semiconductor-metal ultraviolet photodetectors

2014 ◽  
Author(s):  
Heather C. Chiamori ◽  
Chetan Angadi ◽  
Ateeq Suria ◽  
Ashwin Shankar ◽  
Minmin Hou ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Metal Semiconductor Metal ◽  
Effects Of Radiation ◽  
Ultraviolet Photodetectors
Sign in / Sign up

Export Citation Format

Share Document