scholarly journals Enhanced photosensitivity in lightly doped standard telecommunication fibre exposed to high fluence ArF excimer laser light

1995 ◽  
Vol 31 (11) ◽  
pp. 879-880 ◽  
Author(s):  
B. Malo ◽  
K.O. Hill ◽  
D.C. Johnson ◽  
F. Bilodeau ◽  
J. Albert ◽  
...  
Keyword(s):  
Excimer Laser ◽  
Laser Light ◽  
High Fluence ◽  
Arf Excimer Laser

Defects in Photo-Assisted CBE-Grown GaAs

1992 ◽  
Vol 282 ◽  
Author(s):  
Peter J. Goodhew ◽  
R. Beanland ◽  
T. Farrell
Keyword(s):  
Electron Microscopy ◽  
Growth Rate ◽  
Excimer Laser ◽  
Secondary Electron ◽  
Laser Light ◽  
Maximum Growth ◽  
Maximum Growth Rate ◽  
Chemical Beam Epitaxy ◽  
High Fluence ◽  
Microstructure Of The Material

ABSTRACTExcimer laser light has been used to achieve the maximum growth rate of GaAs in a chemical beam epitaxy system when temperatures were more than a hundred degrees below the normalgrowth temperature. Secondary electron and transmitted electron microscopy of material grown using laser assistance shows the presence of surface ripples aligned with crystallographic directions. Layers grown at the lowest temperatures using a high fluence of excimer laser light contain a high density of small dislocation tangles (>1011 cm-−2 ). Lower fluences have no effect on the microstructure of the material.

1701 Birefringence Analysis for Calcium Fluoride Single Crystal Used as Chamber Window of ArF Excimer Laser Light Source

2010 ◽  
Vol 2010.23 (0) ◽  
pp. 437-438
Author(s):  
Yuta KITAMURA ◽  
Noriyuki MIYAZAKI ◽  
Takahito KUMAZAKI ◽  
Naoto NAGAKURA ◽  
Yasuhiro HASHIMOTO ◽  
...  
Keyword(s):  
Single Crystal ◽  
Light Source ◽  
Excimer Laser ◽  
Calcium Fluoride ◽  
Laser Light ◽  
Arf Excimer Laser ◽  
Laser Light Source

Dynamic change of transmission of CaF 2 single crystals by irradiating with ArF excimer laser light

2000 ◽  
Author(s):  
Jochen Alkemper ◽  
Joerg Kandler ◽  
Lorenz Strenge ◽  
Ewald Moersen ◽  
Christian Muehlig ◽  
...  
Keyword(s):  
Single Crystals ◽  
Excimer Laser ◽  
Laser Light ◽  
Dynamic Change ◽  
Arf Excimer Laser

ArF Laser Induced Photochemical Substitution of OH Radicals into Teflon Surface Using Al(OH)3 Solution

1992 ◽  
Vol 279 ◽  
Author(s):  
M. Okoshi ◽  
H. Kashiura ◽  
T. Miyokawa ◽  
K. Toyoda ◽  
M. Murahara
Keyword(s):  
Contact Angle ◽  
Excimer Laser ◽  
Laser Light ◽  
Water Solution ◽  
Sample Surface ◽  
Oh Radicals ◽  
Xps Analysis ◽  
Air Atmosphere ◽  
Arf Excimer Laser ◽  
Teflon Film

ABSTRACTOH radicals were photochemically substituted for fluorine atoms in the teflon surface by using an ArF excimer laser light and an Al(OH)3 solution. This method is simple and can be performed in air atmosphere. In the process, the teflon film was placed on the Al(OH)3 which were dissolved in NaOH water solution; the ArF excimer laser light was irradiated the sample surface and the solution. By irradiating the laser, the surface was defluorinated by the aluminium atoms photodissociated from the Al(OH)3 solution, and the dangling bonds which were formed in the defluorinated surface combined with the OH radicals also photodissociated. The hydrophilic property of the photomodified surface was evaluated by the measurement of the contact angle with water. The defluorination and the OH radicals substitution were inspected by the XPS analysis and the ATR-FTIR measurement.

Comparison with Amino Group and Hydrophilic Group for Protein Afftnity by Excimer Laser Induced Functional Groups Substitution Onto Pet Film

2002 ◽  
Vol 735 ◽  
Author(s):  
Hitoshi Omuro ◽  
Masato Nakagawa ◽  
Hiroaki Fukuda ◽  
Masataka Murahara
Keyword(s):  
Contact Angle ◽  
Functional Groups ◽  
Excimer Laser ◽  
Bonding Strength ◽  
Functional Group ◽  
Laser Light ◽  
Artificial Ligament ◽  
Untreated Sample ◽  
Ammonia Gas ◽  
Arf Excimer Laser

ABSTRACTPET has been widely used for medical materials such as an artificial ligament. However, the affinity of tissues is no good. To compensate this, the mesh formed PET has clinically been used for artificial ligament intruding tissue into mesh. However, this method has not shown sufficient affinity with the tissue; that is, the initial adapting strength of the material and tissue is weak. · The artificial ligament must be biocompatible to contact blood and tissue. The foregoing artificial ligament, however, doesn't satisfy the biocompatibility. ·Thus, we have modified the PET surface into hydrophilic by substituting NH2 or OH functional groups. Firstly, an ArF excimer laser light was irradiated the PET with water on top. The OH functional group was substituted on the PET surface by this photochemical reaction. Secondly, the ArF excimer laser light was irradiated the PET in ammonia gas ambient. In this photochemical reaction, the NH2 functional group was substituted on the PET surface.· In this study, the untreated sample had the contact angle with water of 80 degrees and the bonding strength with protein of only 1.0kg/cm2. The contact angle of the modified sample improved to 40 degrees and the bonding strength, to 23kg/cm2. When treated in ammonia gas, the contact angle also improved to 40 degrees; however, the bonding strength was almost the same as that of the untreated sample.It was confirmed that the affinity of the PET for water and protein could be controlled by increasing or decreasing the substitution concentration of OH and NH2 functional groups on the surface.

Resistless Etching of SiO2 by Two Color Excimer Lasers

1991 ◽  
Vol 236 ◽  
Author(s):  
T. Obara ◽  
M. Murahara
Keyword(s):  
Absorption Band ◽  
Excimer Laser ◽  
Laser Light ◽  
Excimer Lasers ◽  
Etching Pattern ◽  
Thermal Oxide ◽  
Krf Laser ◽  
Arf Excimer Laser

AbstractResistless etching of thermal oxide silicon filmes were demonstrated by ArF & KrF excimer lasers, and CC12F2 gases. CC12F2 was decomposed by ArF excimer laser light, and CF2 radicals were produced. These radicals, which have absorption band nearby 250nm, were vary stable. Then the circuit pattarned KrF laser light was irradiated on the SiO2 in an atomsphere of CF2 radicals. As thse result, the etching pattern of 2 μ m width was performed.

TIME-RESOLVED SPECTROSCOPY OF KI UNDER ONE-PHOTON EXCITATION BY AN ArF EXCIMER LASER

2001 ◽  
Vol 15 (28n30) ◽  
pp. 3797-3800
Author(s):  
NOBUKO ICHIMURA ◽  
HISAO KONDO ◽  
SATOSHI HASHIMOTO
Keyword(s):  
Absorption Spectrum ◽  
Laser Pulse ◽  
Excimer Laser ◽  
Electronic Excitation ◽  
Laser Light ◽  
Power Level ◽  
Time Resolved ◽  
Photon Excitation ◽  
Photon Process ◽  
Arf Excimer Laser

We investigated the absorption spectra of KI under excitation by an ArF excimer laser at 11 K. The laser light excited the sample through a one-photon process. Stable F centres were formed with excitation at a power level above ~ 2 mJ/cm2. From the time-resolved absorption spectrum, it is evident that the F centres are generated within 50 ns after the time of initiation of the laser pulse. The width of the F band at 50 ns was broader than that of the stationary F band at 11 K, suggesting the temperature increase of the crystal. We discuss the relaxation process in KI under dense electronic excitation.

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