Hybrid Er-doped fibre amplifiers at 980–1480 nm for long distance optical communications

1992 ◽  
Vol 28 (17) ◽  
pp. 1642 ◽  
Author(s):  
J.-M.P. Delavaux ◽  
C.F. Flores ◽  
R.E. Tench ◽  
T.C. Pleiss ◽  
T.W. Cline ◽  
...  
Keyword(s):  
Optical Communications ◽  
Long Distance ◽  
Fibre Amplifiers ◽  
Er Doped

Erratum: Hybrid Er-doped fibre amplifiers at 980–1480 nm for long distance optical communications

1992 ◽  
Vol 28 (20) ◽  
pp. 1937
Author(s):  
J.-M.P. Delavaux ◽  
C.F. Flores ◽  
R.E. Tench ◽  
T.C. Pleiss ◽  
T.W. Cline ◽  
...  
Keyword(s):  
Optical Communications ◽  
Long Distance ◽  
Fibre Amplifiers ◽  
Er Doped

Optimization Design for Bidirectional Er-Doped Fiber Amplifier Used in Long Distance Optical Frequency Transfer Link

2017 ◽  
Vol 37 (3) ◽  
pp. 0306006
Author(s):  
臧琦 Zang Qi ◽  
邓雪 Deng Xue ◽  
刘杰 Liu Jie ◽  
曹群 Cao Qun ◽  
焦东东 Jiao Dongdong ◽  
...  
Keyword(s):  
Optimization Design ◽  
Fiber Amplifier ◽  
Optical Frequency ◽  
Long Distance ◽  
Frequency Transfer ◽  
Er Doped

Highly efficient Er-doped fibre amplifiers pumped in 660 nm band

1991 ◽  
Vol 27 (25) ◽  
pp. 2319 ◽  
Author(s):  
M. Horiguchi ◽  
M. Shimizu ◽  
M. Yamada ◽  
K. Yoshino ◽  
H. Hanafusa
Keyword(s):  
Highly Efficient ◽  
Fibre Amplifiers ◽  
Er Doped

Er-Doped GaAs for High Speed Photoconductor Applications

1993 ◽  
Vol 301 ◽  
Author(s):  
S. Gupta ◽  
S. Sethi ◽  
P. K. Bhattacharya ◽  
S. Williamson
Keyword(s):  
Optical Communications ◽  
Potential Application ◽  
High Speed ◽  
Doping Concentration ◽  
Carrier Lifetime ◽  
High Resistivity ◽  
Light Sources ◽  
Erbium Doped ◽  
Er Doped

ABSTRACTThe observation of 1.54 μm luminescence in erbium-doped-GaAs (GaAs:Er) and AlxGal-xAs, has stimulated research efforts because of their potential application to light sources in optical communications. In this paper, we study a different aspect of the photoresponse behavior of this material. The dependence of the carrier lifetime on the doping concentration of Erbium is investigated in GaAs:Er grown by MBE. A reduction in the carrier lifetime down to ∼1 ps is observed for the highest doping (∼5×1019 cm−3) investigated. Together with the high-resistivity observed for the higher doping values, this material serves as a novel photoconductor material for high-speed optoelectronics.

Transmission length improvement in 2.5 Gbit/s direct detection system with Er-doped fibre amplifiers by efficient remote pumping

1991 ◽  
Vol 27 (17) ◽  
pp. 1537 ◽  
Author(s):  
T. Rasmussen ◽  
A. Bjarklev ◽  
J. Hedegaard povlsen ◽  
O. Lumholt ◽  
K. Rottwitt
Keyword(s):  
Direct Detection ◽  
Detection System ◽  
Transmission Length ◽  
Fibre Amplifiers ◽  
Er Doped
Sign in / Sign up

Export Citation Format

Share Document