Temperature dependence of the performance of Er-doped fibre amplifiers with various fibre compositions

1993 ◽  
Author(s):  
D. Simeonidou ◽  
S. Hamidi ◽  
M. J. O'Mahony ◽  
A. S. Siddiqui
Keyword(s):  
Temperature Dependence ◽  
Fibre Amplifiers ◽  
Er Doped

Annealing temperature dependence of Er3+ photoluminescence in alternately Er-doped Si-rich Al2O3 multilayer film

2010 ◽  
Vol 518 (23) ◽  
pp. 6993-6996 ◽  
Author(s):  
Lili Mai ◽  
Fei Xu ◽  
Zuimin Jiang ◽  
Zhongquan Ma ◽  
Xiao Wang ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Multilayer Film ◽  
Annealing Temperature ◽  
Er Doped ◽  
Annealing Temperature Dependence

Growth-temperature dependence of Er-doped GaN luminescent thin films

2002 ◽  
Vol 80 (3) ◽  
pp. 344-346 ◽  
Author(s):  
D. S. Lee ◽  
J. Heikenfeld ◽  
A. J. Steckl
Keyword(s):  
Thin Films ◽  
Temperature Dependence ◽  
Growth Temperature ◽  
Er Doped ◽  
Growth Temperature Dependence

Highly efficient Er-doped fibre amplifiers pumped in 660 nm band

1991 ◽  
Vol 27 (25) ◽  
pp. 2319 ◽  
Author(s):  
M. Horiguchi ◽  
M. Shimizu ◽  
M. Yamada ◽  
K. Yoshino ◽  
H. Hanafusa
Keyword(s):  
Highly Efficient ◽  
Fibre Amplifiers ◽  
Er Doped

Erratum: Hybrid Er-doped fibre amplifiers at 980–1480 nm for long distance optical communications

1992 ◽  
Vol 28 (20) ◽  
pp. 1937
Author(s):  
J.-M.P. Delavaux ◽  
C.F. Flores ◽  
R.E. Tench ◽  
T.C. Pleiss ◽  
T.W. Cline ◽  
...  
Keyword(s):  
Optical Communications ◽  
Long Distance ◽  
Fibre Amplifiers ◽  
Er Doped

Characterization of Visible and Infrared (1.54 μm) Luminescence from Er-doped Porous Si

1996 ◽  
Vol 422 ◽  
Author(s):  
R. White ◽  
X. Wu ◽  
U. Hömmerich ◽  
F. Namavar ◽  
A. M. Cremins-Costa
Keyword(s):  
Temperature Dependence ◽  
Photoluminescence Excitation ◽  
Porous Si ◽  
Pl Intensity ◽  
Si Nanostructures ◽  
Er Doped

AbstractResults of a photoluminescence excitation (PLE) study of Er-implanted porous Si (Er: PSi) are presented. Erbium was implanted at a dose of 1×1015 Er/cm2 at 380 keV and annealed for 30 minutes at 6507deg;C. We observed a nearly identical PLE intensity behavior from 1.54 μm and visible-emitting Er: PSi. This observation indicates that both visible and infrared photoluminescence (PL) arise from carrier mediated processes, and that the 1.54 μm Er3+ PL is related to the porous Si nanostructures. Measurements of the temperature dependence (15–375K) of Er3+ PL intensity and lifetime are also reported.

scholarly journals Er3+ Photoluminescence Properties of Erbium-doped Si/SiO2 Superlattices with sub-nm Thin Si Layers

2000 ◽  
Vol 638 ◽  
Author(s):  
Yong Ho Ha ◽  
Sehun Kim ◽  
Dae Won Moon ◽  
Ji-Hong Jhe ◽  
Jung H. Shin
Keyword(s):  
Temperature Dependence ◽  
Layer Thickness ◽  
Luminescence Intensity ◽  
Luminescence Properties ◽  
Photoluminescence Properties ◽  
Time Resolved ◽  
Excitation Rate ◽  
Erbium Doped ◽  
Order Of Magnitude ◽  
Er Doped

AbstractThe effect of varying the Si layer thickness on the Er3+ photoluminescence properties of Er-doped Si/SiO2 superlattice is investigated. We find that as the Si layer thickness is reduced from 3.6 nm down to a monolayer of Si, the Er3+ luminescence intensity increases by over an order of magnitude. Temperature dependence of the Er3+ luminescence intensity and time-resolved measurement of Er3+ luminescence intensity identify the increase in the excitation rate as the likely cause for such an increase, and underscore the importance of the Si/SiO2 interface in determining the Er3+ luminescence properties.

Transmission length improvement in 2.5 Gbit/s direct detection system with Er-doped fibre amplifiers by efficient remote pumping

1991 ◽  
Vol 27 (17) ◽  
pp. 1537 ◽  
Author(s):  
T. Rasmussen ◽  
A. Bjarklev ◽  
J. Hedegaard povlsen ◽  
O. Lumholt ◽  
K. Rottwitt
Keyword(s):  
Direct Detection ◽  
Detection System ◽  
Transmission Length ◽  
Fibre Amplifiers ◽  
Er Doped

2.5 Gbit/s, 10073 km straight line transmission system experiment using 199 Er-doped fibre amplifiers

1992 ◽  
Vol 28 (16) ◽  
pp. 1484 ◽  
Author(s):  
T. Imai ◽  
M. Murakami ◽  
Y. Fukada ◽  
M. Aiki ◽  
T. Ito
Keyword(s):  
Transmission System ◽  
Straight Line ◽  
System Experiment ◽  
Fibre Amplifiers ◽  
Er Doped
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