DC and RF performance of GaAs MESFET fabricated on silicon substrate using epitaxial lift-off technique

1990 ◽  
Vol 26 (22) ◽  
pp. 1865 ◽  
Author(s):  
D.M. Shah ◽  
W.K. Chan ◽  
T.J. Gmitter ◽  
L.T. Florez ◽  
H. Schumacher ◽  
...  
1990 ◽  
Vol 26 (16) ◽  
pp. 1324
Author(s):  
I. Pollentier ◽  
L. Buydens ◽  
A. Ackaert ◽  
P. Demeester ◽  
P. van Daele ◽  
...  

Nanomaterials ◽  
2019 ◽  
Vol 9 (8) ◽  
pp. 1178 ◽  
Author(s):  
Qiang Zhao ◽  
Jiahao Miao ◽  
Shengjun Zhou ◽  
Chengqun Gui ◽  
Bin Tang ◽  
...  

We demonstrate high-power GaN-based vertical light-emitting diodes (LEDs) (VLEDs) on a 4-inch silicon substrate and flip-chip LEDs on a sapphire substrate. The GaN-based VLEDs were transferred onto the silicon substrate by using the Au–In eutectic bonding technique in combination with the laser lift-off (LLO) process. The silicon substrate with high thermal conductivity can provide a satisfactory path for heat dissipation of VLEDs. The nitrogen polar n-GaN surface was textured by KOH solution, which not only improved light extract efficiency (LEE) but also broke down Fabry–Pérot interference in VLEDs. As a result, a near Lambertian emission pattern was obtained in a VLED. To improve current spreading, the ring-shaped n-electrode was uniformly distributed over the entire VLED. Our combined numerical and experimental results revealed that the VLED exhibited superior heat dissipation and current spreading performance over a flip-chip LED (FCLED). As a result, under 350 mA injection current, the forward voltage of the VLED was 0.36 V lower than that of the FCLED, while the light output power (LOP) of the VLED was 3.7% higher than that of the FCLED. The LOP of the FCLED saturated at 1280 mA, but the light output saturation did not appear in the VLED.


Author(s):  
Kebin Gu ◽  
Chien-Liu Chang ◽  
Jyh-Cherng Shieh

In this paper, we present the design and fabrication of innovative phononic crystals integrated with two sets of interdigital (IDT) electrodes for frequency band selection of surface acoustic waves (SAW). The potential applications of this device include performance improvement of SAW micro-sensors, front-end components in RF circuitries, and directional receptions of high frequency acoustic waves. Analogous to the band-gap generated by photonic crystals, the phononic crystals, two dimensional repetitive structures composed of two different elastic materials, can prohibit the propagation of elastic waves with either specific incident angles or certain bandwidth. In this paper, the prohibited bandwidth has been verified by fabricating the phononic crystals between a micromachined SAW resonator and a receiver. Both the resonator and receiver are composed of IDT electrodes deposited and patterned on a thin piezoelectric layer. To confine the prohibited bandwidth on the order of hundred MHz, the diameter of the circular pores in phononic crystals is designed to be 6 micron and the aspect ratio of each pore is 3:1. To maximize the power transduction from IDT electrodes to SAW, the spacing between two inter-digits is one-fourth the wavelength of SAW. Specifically, the spacing ranges from 3.4 microns to 9.0 microns, depending on the central frequency. Both surface and bulk micromachining are employed and integrated to fabricate the crystals as well as SAW resonator and receiver altogether. Firstly, a 1.5-micron zinc oxide, which provides well-defined central frequency, is sputtered and patterned onto silicon substrate. Second, the IDT electrodes are evaporated and patterned by lift-off technique. Then the exposed silicon substrate is etched using DRIE to generate two dimensional phononic crystals. To tune the prohibited SAW bandwidth, the crystal pores are filled with copper or nickel by electroless plating. The insertion loss of the fabricated devices is characterized and is found to agree with simulation results.


1990 ◽  
Vol 26 (13) ◽  
pp. 925 ◽  
Author(s):  
I. Polentier ◽  
L. Buydens ◽  
A. Ackaert ◽  
P. Demeester ◽  
P. van Daele ◽  
...  

2021 ◽  
Vol 11 (16) ◽  
pp. 7498
Author(s):  
Lev V. Shanidze ◽  
Anton S. Tarasov ◽  
Mikhail V. Rautskiy ◽  
Fyodor V. Zelenov ◽  
Stepan O. Konovalov ◽  
...  

We fabricated Cu-doped TiNxOy thin film resistors by using atomic layer deposition, optical lithography, dry etching, Ti/Cu/Ti/Au e-beam evaporation and lift-off processes. The results of the measurements of the resistance temperature dependence, non-linearity, S-parameters at 0.01–26 GHz and details of the breakdown mechanism under high-voltage stress are reported. The devices’ sheet resistance is 220 ± 8 Ω/□ (480 ± 20 µΩ*cm); intrinsic resistance temperature coefficient (TCR) is ~400 ppm/°C in the T-range of 10–300 K; and S-parameters versus frequency are flat up to 2 GHz with maximum variation of 10% at 26 GHz. The resistors can sustain power and current densities up to ~5 kW*cm−2 and ~2 MA*cm−2, above which they switch to high-resistance state with the sheet resistance equal to ~200 kΩ/□ (~0.4 Ω*cm) caused by nitrogen and copper desorption from TiNxOy film. The Cu/Ti/TiNxOy contact is prone to ageing due to gradual titanium oxidation while the TiNxOy resistor body is stable. The resistors have strong potential for applications in high-frequency integrated and hybrid circuits that require small-footprint, medium-range resistors of 0.05–10 kΩ, with small TCR and high-power handling capability.


2003 ◽  
Vol 200 (1) ◽  
pp. 179-182 ◽  
Author(s):  
M. Marso ◽  
P. Javorka ◽  
Y. Dikme ◽  
H. Kalisch ◽  
J. Bernát ◽  
...  

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