High temperature DC and RF performance of p-type diamond MESFET: comparison with n-type GaAs MESFET

AbstractIt is well known that hydrogen plays a key role in p-type doping of GaN. It is believed that H passivates substitutional Mg during growth by forming a Mgs-N-Hi complex; in subsequent annealing, H is removed, resulting in p-type doping. Several open questions have remained, however, such as experimental evidence for other complexes involving Mg and H and difficulties in accounting for the relatively high-temperature anneal needed to remove H. We present first principles calculations in terms of which we show that the doping process is in fact significantly more complex. In particular, interstitial Mg plays a major role in limiting p-type doping. Overall, several substitutional/interstitial complexes form and can bind H, with vibrational frequencies that account for hitherto unidentified observed lines. We predict that these defects, which limit doping efficiency, can be eliminated by annealing in an atmosphere of H and N prior to the final anneal that removes H.

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High-temperature thermoelectric properties of p-type skutterudites Ba0.15Yb x Co3FeSb12 and Yb y Co3FeSb9As3

Journal of Materials Science ◽

10.1007/s10853-014-8562-z ◽

2014 ◽

Vol 50 (1) ◽

pp. 34-39 ◽

Cited By ~ 9

Author(s):

Yongkwan Dong ◽

Pooja Puneet ◽

Terry M. Tritt ◽

George S. Nolas

Keyword(s):

High Temperature ◽

Thermoelectric Properties ◽

P Type

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Study on the Stability of the Electrical Connection of High-Temperature Pressure Sensor Based on the Piezoresistive Effect of P-Type SiC

Micromachines ◽

10.3390/mi12020216 ◽

2021 ◽

Vol 12 (2) ◽

pp. 216

Author(s):

Yongwei Li ◽

Ting Liang ◽

Cheng Lei ◽

Qiang Li ◽

Zhiqiang Li ◽

...

Keyword(s):

High Temperature ◽

Pressure Sensor ◽

Pressure Sensors ◽

Extreme Environment ◽

Maximum Temperature ◽

Piezoresistive Effect ◽

Electrical Connection ◽

Contact Stability ◽

The Stability ◽

P Type

In this study, a preparation method for the high-temperature pressure sensor based on the piezoresistive effect of p-type SiC is presented. The varistor with a positive trapezoidal shape was designed and etched innovatively to improve the contact stability between the metal and SiC varistor. Additionally, the excellent ohmic contact was formed by annealing at 950 °C between Ni/Al/Ni/Au and p-type SiC with a doping concentration of 1018cm−3. The aging sensor was tested for varistors in the air of 25 °C–600 °C. The resistance value of the varistors initially decreased and then increased with the increase of temperature and reached the minimum at ~450 °C. It could be calculated that the varistors at ~100 °C exhibited the maximum temperature coefficient of resistance (TCR) of ~−0.35%/°C. The above results indicated that the sensor had a stable electrical connection in the air environment of ≤600 °C. Finally, the encapsulated sensor was subjected to pressure/depressure tests at room temperature. The test results revealed that the sensor output sensitivity was approximately 1.09 mV/V/bar, which is better than other SiC pressure sensors. This study has a great significance for the test of mechanical parameters under the extreme environment of 600 °C.

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High temperature terahertz response in a p-type quantum dot-in-well photodetector

Applied Physics Letters ◽

10.1063/1.4898088 ◽

2014 ◽

Vol 105 (15) ◽

pp. 151107 ◽

Cited By ~ 6

Author(s):

Seyoum Wolde ◽

Yan-Feng Lao ◽

A. G. Unil Perera ◽

Y. H. Zhang ◽

T. M. Wang ◽

...

Keyword(s):

High Temperature ◽

Quantum Dot ◽

P Type

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Cubic Boron Nitride as a New Semiconductor for Optoelectronics: Luminescence Properties and Potentialities

MRS Proceedings ◽

10.1557/proc-162-555 ◽

1989 ◽

Vol 162 ◽

Cited By ~ 2

Author(s):

Koh Era ◽

Osamu Mishima

Keyword(s):

High Pressure ◽

High Temperature ◽

Boron Nitride ◽

Room Temperature ◽

Cubic Boron Nitride ◽

Visible Region ◽

Vibrational Structure ◽

Luminescence Properties ◽

Optoelectronic Applications ◽

P Type

ABSTRACTIn cubic boron nitride made by high pressure and high temperature technique in our institute, we have found three luminescence bands in the ultraviolet and the short visible region at room temperature by cathode-ray excitation. They are: a band having vibrational structure and ascribable to undoped state of the crystal, a band ascribable to p-type doping and a band ascribable to n-type doping. Discussion is made on differences between the injection luminescence and the cathodoluminescence. Potentialities and difficulties in realizing the potentialities of cBN for optoelectronic applications are discussed.

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ARE THERE ANY n-TYPE HIGH-TEMPERATURE CUPRATE SUPERCONDUCTORS?

International Journal of Modern Physics B ◽

10.1142/s0217979299003672 ◽

1999 ◽

Vol 13 (29n31) ◽

pp. 3688-3692 ◽

Cited By ~ 1

Author(s):

Howard A. Blackstead ◽

John D. Dow ◽

Martin Lehmann

Keyword(s):

High Temperature ◽

Cuprate Superconductors ◽

P Type

Based (i) on data for the Pb 2 Sr 2 YCu 3 O 8 (PSYCO) homologues with Y replaced by R = Ce or R = Am, and (ii) on experimental facts for Nd 2-z Ce z CuO 4, we conclude that all the main high-temperature cuprate superconductors are p-type, and that very likely none are n-type.

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Temperature Dependence and High-Temperature Stability of the Annealed Ni/Au Ohmic Contact to p-Type GaN in Air

Journal of Electronic Materials ◽

10.1007/s11664-015-4278-3 ◽

2015 ◽

Vol 45 (4) ◽

pp. 2087-2091 ◽

Cited By ~ 6

Author(s):

Shirong Zhao ◽

Heather McFavilen ◽

Shuo Wang ◽

Fernando A. Ponce ◽

Chantal Arena ◽

...

Keyword(s):

High Temperature ◽

Temperature Dependence ◽

Ohmic Contact ◽

Temperature Stability ◽

High Temperature Stability ◽

P Type

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Impact of Carrier Lifetime Enhancement Using High Temperature Oxidation on 15 kV 4H-SiC P-GTO Thyristor

Materials Science Forum ◽

10.4028/www.scientific.net/msf.897.587 ◽

2017 ◽

Vol 897 ◽

pp. 587-590 ◽

Cited By ~ 6

Author(s):

Sei Hyung Ryu ◽

Daniel J. Lichtenwalner ◽

Edward van Brunt ◽

Craig Capell ◽

Michael J. O’Loughlin ◽

...

Keyword(s):

High Temperature ◽

Carrier Lifetime ◽

Voltage Drop ◽

Current Gain ◽

Slight Reduction ◽

Temperature Oxidation ◽

Forward Voltage Drop ◽

P Type ◽

The Impact ◽

Lifetime Enhancement

The impact of the lifetime enhancement process using high temperature thermal oxidation method on 4H-SiC P-GTOs was investigated. 15 kV 4H-SiC P-GTOs with 140 μm thick drift layers, with and without 1450°C lifetime enhancement oxidation (LEO) process, were compared. The LEO process increased the average carrier lifetime in p-type epi layer from 0.9 μs to 6.25 μs, and it was observed that the effectiveness of the lifetime enhancement process was very sensitive to the doping concentration. The device with the LEO process showed a significant reduction in forward voltage drop and a substantially lower holding current, as expected from the carrier lifetime measurements. However, a slight reduction in blocking capability was also observed from the devices treated with LEO process. The common emitter current gain (β) of the wide base test NPN BJT was approximately 10X higher for the wafer with LEO process.

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