Influence of doping concentration on DC and RF performance of AlGaN/GaN HEMTs on silicon substrate

2003 ◽  
Vol 200 (1) ◽  
pp. 179-182 ◽  
Author(s):  
M. Marso ◽  
P. Javorka ◽  
Y. Dikme ◽  
H. Kalisch ◽  
J. Bernát ◽  
...  
Keyword(s):  
Silicon Substrate ◽  
Doping Concentration ◽  
Gan Hemts ◽  
Rf Performance

Enhancement-mode AlGaN/GaN HEMTs on silicon substrate

2006 ◽  
Vol 53 (6) ◽  
pp. 1474-1477 ◽  
Author(s):  
Shuo Jia ◽  
Yong Cai ◽  
Deliang Wang ◽  
Baoshun Zhang ◽  
K.M. Lau ◽  
...  
Keyword(s):  
Silicon Substrate ◽  
Enhancement Mode ◽  
Gan Hemts

scholarly journals Ka band High RF performance AlGaN/GaN HEMTs

2018 ◽  
Vol 170 ◽  
pp. 042021 ◽  
Author(s):  
Lijiang Zhang ◽  
Xingchang Fu ◽  
Pengbo Du ◽  
Yuxing Cui ◽  
Xianjie Li ◽  
...  
Keyword(s):  
Ka Band ◽  
Gan Hemts ◽  
Rf Performance

High-power AlGaN∕GaN HEMTs on resistive silicon substrate

2002 ◽  
Vol 38 (14) ◽  
pp. 750 ◽  
Author(s):  
V. Hoël ◽  
N. Vellas ◽  
C. Gaquière ◽  
J.C. De Jaeger ◽  
Y. Cordier ◽  
...  
Keyword(s):  
High Power ◽  
Silicon Substrate ◽  
Gan Hemts

First AlN/GaN HEMTs power measurement at 18 GHz on Silicon substrate

2011 ◽  
Author(s):  
F. Medjdoub ◽  
M. Zegaoui ◽  
D. Ducatteau ◽  
N. Rolland ◽  
P.A. Rolland
Keyword(s):  
Silicon Substrate ◽  
Power Measurement ◽  
Gan Hemts

Effect of GaN Channel Layer Thickness on DC and RF Performance of GaN HEMTs With Composite AlGaN/GaN Buffer

2014 ◽  
Vol 61 (5) ◽  
pp. 1341-1346 ◽  
Author(s):  
Xinhua Wang ◽  
Sen Huang ◽  
Yingkui Zheng ◽  
Ke Wei ◽  
Xiaojuan Chen ◽  
...  
Keyword(s):  
Layer Thickness ◽  
Channel Layer ◽  
Gan Hemts ◽  
Rf Performance

Uniformity of dc and rf performance of MBE-grown AlGaN/GaN HEMTS on HVPE-grown buffers

2003 ◽  
Vol 47 (10) ◽  
pp. 1859-1862 ◽  
Author(s):  
J.K. Gillespie ◽  
R.C. Fitch ◽  
N. Moser ◽  
T. Jenkins ◽  
J. Sewell ◽  
...  
Keyword(s):  
Gan Hemts ◽  
Rf Performance

RF Performance of Trigate GaN HEMTs

2016 ◽  
Vol 63 (11) ◽  
pp. 4255-4261 ◽  
Author(s):  
Mohamed Alsharef ◽  
Max Christiansen ◽  
Ralf Granzner ◽  
Erdin Ture ◽  
Ridiger Quay ◽  
...  
Keyword(s):  
Gan Hemts ◽  
Rf Performance

Investigation of traps in AlGaN/GaN HEMTs on silicon substrate

2003 ◽  
Vol 0 (7) ◽  
pp. 2360-2363 ◽  
Author(s):  
M. Wolter ◽  
M. Marso ◽  
P. Javorka ◽  
J. Bernát ◽  
R. Carius ◽  
...  
Keyword(s):  
Silicon Substrate ◽  
Gan Hemts
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