scholarly journals Cu-Doped TiNxOy Thin Film Resistors DC/RF Performance and Reliability

2021 ◽  
Vol 11 (16) ◽  
pp. 7498
Author(s):  
Lev V. Shanidze ◽  
Anton S. Tarasov ◽  
Mikhail V. Rautskiy ◽  
Fyodor V. Zelenov ◽  
Stepan O. Konovalov ◽  
...  
Keyword(s):  
Thin Film ◽  
Sheet Resistance ◽  
Atomic Layer ◽  
High Resistance State ◽  
Intrinsic Resistance ◽  
S Parameters ◽  
Thin Film Resistors ◽  
Power Handling Capability ◽  
Lift Off ◽  
Rf Performance

We fabricated Cu-doped TiNxOy thin film resistors by using atomic layer deposition, optical lithography, dry etching, Ti/Cu/Ti/Au e-beam evaporation and lift-off processes. The results of the measurements of the resistance temperature dependence, non-linearity, S-parameters at 0.01–26 GHz and details of the breakdown mechanism under high-voltage stress are reported. The devices’ sheet resistance is 220 ± 8 Ω/□ (480 ± 20 µΩ*cm); intrinsic resistance temperature coefficient (TCR) is ~400 ppm/°C in the T-range of 10–300 K; and S-parameters versus frequency are flat up to 2 GHz with maximum variation of 10% at 26 GHz. The resistors can sustain power and current densities up to ~5 kW*cm−2 and ~2 MA*cm−2, above which they switch to high-resistance state with the sheet resistance equal to ~200 kΩ/□ (~0.4 Ω*cm) caused by nitrogen and copper desorption from TiNxOy film. The Cu/Ti/TiNxOy contact is prone to ageing due to gradual titanium oxidation while the TiNxOy resistor body is stable. The resistors have strong potential for applications in high-frequency integrated and hybrid circuits that require small-footprint, medium-range resistors of 0.05–10 kΩ, with small TCR and high-power handling capability.

scholarly journals Self-Aligned Thin-Film Patterning by Area-Selective Etching of Polymers

Coatings ◽  
2021 ◽  
Vol 11 (9) ◽  
pp. 1124
Author(s):  
Chao Zhang ◽  
Markku Leskelä ◽  
Mikko Ritala
Keyword(s):  
Thin Film ◽  
Polymer Film ◽  
Semiconductor Devices ◽  
Atomic Layer ◽  
Thin Film Deposition ◽  
Selective Etching ◽  
Film Deposition ◽  
Deposition Processes ◽  
Lift Off ◽  
Thin Film Patterning

Patterning of thin films with lithography techniques for making semiconductor devices has been facing increasing difficulties with feature sizes shrinking to the sub-10 nm range, and alternatives have been actively sought from area-selective thin film deposition processes. Here, an entirely new method is introduced to self-aligned thin-film patterning: area-selective gas-phase etching of polymers. The etching reactions are selective to the materials underneath the polymers. Either O2 or H2 can be used as an etchant gas. After diffusing through the polymer film to the catalytic surfaces, the etchant gas molecules are dissociated into their respective atoms, which then readily react with the polymer, etching it away. On noncatalytic surfaces, the polymer film remains. For example, polyimide and poly(methyl methacrylate) (PMMA) were selectively oxidatively removed at 300 °C from Pt and Ru, while on SiO2 they stayed. CeO2 also showed a clear catalytic effect for the oxidative removal of PMMA. In H2, the most active surfaces catalysing the hydrogenolysis of PMMA were Cu and Ti. The area-selective etching of polyimide from Pt was followed by area-selective atomic layer deposition of iridium using the patterned polymer as a growth-inhibiting layer on SiO2, eventually resulting in dual side-by-side self-aligned formation of metal-on-metal and insulator (polymer)-on-insulator. This demonstrates that when innovatively combined with area-selective thin film deposition and, for example, lift-off patterning processes, self-aligned etching processes will open entirely new possibilities for the fabrication of the most advanced and challenging semiconductor devices.

An Approach on the Use of Co-Sputtered W-DLC Thin Films as Piezoresistive Sensing Materials

2021 ◽  
Vol 14 ◽  
Author(s):  
Gabriela Leal ◽  
Humber Furlan ◽  
Marcos Massi ◽  
Mariana Amorim Fraga
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Synthesis Method ◽  
Pressure Sensors ◽  
Strain Gauges ◽  
Gauge Factor ◽  
Diamond Like Carbon ◽  
Piezoresistive Sensors ◽  
Thin Film Resistors ◽  
Lift Off

Background: Miniaturized piezoresistive sensors, particularly strain gauges, pressure sensors, and accelerometers, have been used for measurements and control applications in various fields, such as automotive, aerospace, industrial, biomedical, sports, and many more. A variety of different materials have been investigated for the development of these sensors. Among them, diamond-like carbon (DLC) thin films have emerged as one of the most promising piezoresistive sensing materials due to their excellent mechanical properties, such as high hardness and high Young’s modulus. At the same time, metal doping has been studied to enhance its electrical properties. Objective: This article explores the use of co-sputtered tungsten-doped diamond-like carbon (W-DLC) thin films as microfabricated strain gauges or piezoresistors. Methods: Different serpentine thin-film resistors were microfabricated on co-sputtered W-DLC thin films using photolithography, metallization, lift-off, and RIE (reactive ion etching) processes. In order to evaluate their piezoresistive sensing performance, gauge factor (GF) measurements were carried out at room temperature using the cantilever beam method. Results: GF values obtained in this study for co-sputtered W-DLC thin films are comparable to those reported for W-DLC films produced and characterized by other techniques, which indicates the feasibility of our approach to use them as sensing materials in piezoresistive sensors. Conclusion: W-DLC thin films produced by the co-magnetron sputtering technique can be considered as sensing materials for miniaturized piezoresistive sensors due to the following key advantages: (i) easy and well-controlled synthesis method, (ii) good piezoresistive properties exhibiting a GF higher than metals, and (iii) thin-film resistors formed by a simple microfabrication process.

scholarly journals TiNxThin-Film Resistors for Hybrid Integrated Circuits

1980 ◽  
Vol 6 (3-4) ◽  
pp. 231-233
Author(s):  
Z. Kempisty ◽  
L. Kròl-Stępniewska ◽  
W. Posadowski
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Integrated Circuits ◽  
Sheet Resistance ◽  
Nitrogen Atmosphere ◽  
Accelerated Ageing ◽  
Glass Substrates ◽  
Thin Film Resistors

TiNxthin-films have been evaluated for use as thin-film resistors. Thin-films were obtained by reactive triode sputtering of titanium in nitrogen atmosphere on crystallized glass substrates. In the resistiveTiNxlayers, the value ofxwas 0.96.2The value of the sheet resistance of the tested layers was 30 ohm/sq. Stability and TCR were measured during accelerated ageing.

Study on the Correlation between Film Composition and Piezoresistive Properties of PECVD SixCy Thin Films

2013 ◽  
Vol 740-742 ◽  
pp. 431-434 ◽  
Author(s):  
Mariana A. Fraga ◽  
Leandro L. Koberstein
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
The Other ◽  
Gauge Factor ◽  
Temperature Coefficient Of Resistance ◽  
Si Substrates ◽  
Thin Film Resistors ◽  
Lift Off

The effects of carbon content on the piezoresistive properties of non-stoichiometric silicon carbide (SixCy) films deposited on thermally oxidized (100) Si substrates by Plasma Enhanced Chemical Vapor Deposition (PECVD) from silane (SiH4) and methane (CH4) gas mixtures have been investigated. Four different film compositions have been obtained by varying SiH4 flow ratios from 1.0 to 4.0 sccm, while the other parameters were kept constant. In order to evaluate the piezoresistive properties of the SixCy films, we have developed test structures consisting of SixCy thin-film resistors defined by reactive ion etching (RIE) with Ti/Au pads formed by lift-off process. The gauge factor (GF) and temperature coefficient of resistance (TCR) of each SixCy film were measured.

scholarly journals Current Noise in Thick and Thin Film Resistors

1983 ◽  
Vol 10 (2-3) ◽  
pp. 81-85 ◽  
Author(s):  
S. Demolder ◽  
A. Van Calster ◽  
M. Vandendriessche
Keyword(s):  
Thin Film ◽  
Thick Film ◽  
Measured Data ◽  
Measuring Circuit ◽  
Current Noise ◽  
High Quality ◽  
Thin Film Resistors

In this paper a sensitive measuring circuit is described for the measurement of current noise on high quality thin and thick film resistors. Measured data on resistors are presented and analysed.

Epitaxial lift-off CdTe/MgCdTe double heterostructures for thin-film and flexible solar cells applications

2021 ◽  
Vol 118 (18) ◽  
pp. 181101
Author(s):  
Jia Ding ◽  
Cheng-Ying Tsai ◽  
Zheng Ju ◽  
Yong-Hang Zhang
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Double Heterostructures ◽  
Lift Off

scholarly journals High-yield fabrication of perpendicularly magnetised synthetic antiferromagnetic nanodiscs

Nano Research ◽  
2021 ◽  
Author(s):  
Emma N. Welbourne ◽  
Tarun Vemulkar ◽  
Russell P. Cowburn
Keyword(s):  
Thin Film ◽  
Magnetic Properties ◽  
Sacrificial Layer ◽  
Nanosphere Lithography ◽  
High Yield ◽  
Perpendicular Anisotropy ◽  
Ion Milling ◽  
Lift Off

AbstractSynthetic antiferromagnetic (SAF) particles with perpendicular anisotropy display a number of desirable characteristics for applications in biological and other fluid environments. We present an efficient and effective method for the patterning of ultrathin Ruderman-Kittel-Kasuya-Yoshida coupled, perpendicularly magnetised SAFs using a combination of nanosphere lithography and ion milling. A Ge sacrificial layer is utilised, which provides a clean and simple lift-off process, as well as maintaining the key magnetic properties that are beneficial to target applications. We demonstrate that the method is capable of producing a particularly high yield of well-defined, thin film based nanoparticles.

scholarly journals Gradually Modified Conductance in the Self-Compliance Region of an Atomic-Layer-Deposited Pt/TiO2/HfAlOx/TiN RRAM Device

Metals ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 1199
Author(s):  
Hojeong Ryu ◽  
Sungjun Kim
Keyword(s):  
Photoelectron Spectroscopy ◽  
Depth Profiling ◽  
Atomic Layer ◽  
High Resistance State ◽  
Long Term Potentiation ◽  
Memory Device ◽  
Bipolar Resistive Switching ◽  
Term Potentiation ◽  
Resistance State ◽  
Neuromorphic System

This study presents conductance modulation in a Pt/TiO2/HfAlOx/TiN resistive memory device in the compliance region for neuromorphic system applications. First, the chemical and material characteristics of the atomic-layer-deposited films were verified by X-ray photoelectron spectroscopy depth profiling. The low-resistance state was effectively controlled by the compliance current, and the high-resistance state was adjusted by the reset stop voltage. Stable endurance and retention in bipolar resistive switching were achieved. When a compliance current of 1 mA was imposed, only gradual switching was observed in the reset process. Self-compliance was used after an abrupt set transition to achieve a gradual set process. Finally, 10 cycles of long-term potentiation and depression were obtained in the compliance current region for neuromorphic system applications.

Atomic Layer Deposited Materials as Barrier Layers for Preservation of Nb Superconductivity in Multilayered Thin-Film Structures

2021 ◽  
pp. 1-1
Author(s):  
Vaibhav Gupta ◽  
Mark L. Adams ◽  
John A. Sellers ◽  
Noah Niedzwiecki ◽  
Nick Rush ◽  
...  
Keyword(s):  
Thin Film ◽  
Atomic Layer ◽  
Multilayered Thin Film ◽  
Barrier Layers
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