Low voltage InGaAs/InP multiple quantum well reflective Fabry-Perot modulator

1990 ◽  
Vol 26 (13) ◽  
pp. 913 ◽  
Author(s):  
A.J. Moseley ◽  
J. Thompson ◽  
M.Q. Kearley ◽  
D.J. Robbins ◽  
M.J. Goodwin
2013 ◽  
Vol 79 ◽  
pp. 104-110 ◽  
Author(s):  
Sandra Pralgauskaitė ◽  
Vilius Palenskis ◽  
Jonas Matukas ◽  
Bronius Šaulys ◽  
Vladimir Kornijčuk ◽  
...  

2020 ◽  
Vol 38 (13) ◽  
pp. 3414-3421
Author(s):  
Xiaoxin Wang ◽  
Shaoliang Yu ◽  
Jun Qin ◽  
Alejandra Cuervo-Covian ◽  
Haijie Zuo ◽  
...  

1993 ◽  
Vol 07 (08) ◽  
pp. 533-541
Author(s):  
M. NAWAZ ◽  
B. T. OLSEN ◽  
K. McILVANEY

The results of the high-speed response of GaAs/AlGaAs multiple quantum well (MQW) based asymmetric Fabry Perot (ASFP) reflection modulator are presented. The measured 3 dB electrical frequency response bandwidth of the modulator was 600 MHz. The contrast ratio of the modulator was 8.9 dB for a driving voltage of 13 V, at an operating wavelength of 862 nm.


1985 ◽  
Vol 46 (1) ◽  
pp. 70-72 ◽  
Author(s):  
A. Migus ◽  
A. Antonetti ◽  
D. Hulin ◽  
A. Mysyrowicz ◽  
H. M. Gibbs ◽  
...  

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