One‐picosecond opticalnorgate at room temperature with a GaAs‐AlGaAs multiple‐quantum‐well nonlinear Fabry–Perot étalon

1985 ◽  
Vol 46 (1) ◽  
pp. 70-72 ◽  
Author(s):  
A. Migus ◽  
A. Antonetti ◽  
D. Hulin ◽  
A. Mysyrowicz ◽  
H. M. Gibbs ◽  
...  
Keyword(s):  
Quantum Well ◽  
Room Temperature ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Fabry Perot

Electroabsorption by Stark effect on room‐temperature excitons in GaAs/GaAlAs multiple quantum well structures

1983 ◽  
Vol 42 (10) ◽  
pp. 864-866 ◽  
Author(s):  
D. S. Chemla ◽  
T. C. Damen ◽  
D. A. B. Miller ◽  
A. C. Gossard ◽  
W. Wiegmann
Keyword(s):  
Quantum Well ◽  
Room Temperature ◽  
Stark Effect ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Quantum Well Structures

Analysis of mode-hopping effect in Fabry–Pérot multiple-quantum well laser diodes via low frequency noise investigation

2013 ◽  
Vol 79 ◽  
pp. 104-110 ◽  
Author(s):  
Sandra Pralgauskaitė ◽  
Vilius Palenskis ◽  
Jonas Matukas ◽  
Bronius Šaulys ◽  
Vladimir Kornijčuk ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Laser Diodes ◽  
Low Frequency ◽  
Frequency Noise ◽  
Multiple Quantum ◽  
Quantum Well Laser ◽  
Fabry Perot ◽  
Mode Hopping ◽  
Multiple Quantum Well Laser

Room temperature electro-optic effect in CdHgTe multiple quantum well heterostructures at 1.5 μm

1997 ◽  
Vol 70 (7) ◽  
pp. 856-858 ◽  
Author(s):  
Guido Mula ◽  
N. T. Pelekanos ◽  
P. Gentile ◽  
N. Magnea ◽  
J. L. Pautrat
Keyword(s):  
Quantum Well ◽  
Room Temperature ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Electro Optic

scholarly journals Room-temperature operation of npn- AlGaInAs/InP multiple quantum well transistor laser emitting at 13-µm wavelength

2012 ◽  
Vol 20 (4) ◽  
pp. 3983 ◽  
Author(s):  
Mizuki Shirao ◽  
Takashi Sato ◽  
Noriaki Sato ◽  
Nobuhiko Nishiyama ◽  
Shigehisa Arai
Keyword(s):  
Quantum Well ◽  
Room Temperature ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Transistor Laser ◽  
Room Temperature Operation

Optical Characterization of Iv-VI Mid-Infrared Vcsel

2001 ◽  
Vol 692 ◽  
Author(s):  
F. Zhao ◽  
H. Wu ◽  
T. Zheng ◽  
P. J. McCann ◽  
A. Majumdar ◽  
...  
Keyword(s):  
Room Temperature ◽  
Multiple Quantum Well ◽  
High Energy ◽  
Cavity Surface ◽  
Temperature Threshold ◽  
Multiple Quantum ◽  
Fabry Perot ◽  
Vertical Cavity Surface ◽  
Surface Emitting Laser ◽  
Increasing Temperature

AbstractPbSe/PbSrSe multiple-quantum-well (MQW) structures and PbSrSe thin films were grown on BaF2 (111) substrates by molecular beam epitaxy (MBE) and characterized by Fourier transform infrared (FTIR) spectrometer. Strong photoluminescence without Fabry-Perot interference fringes was observed even at room temperature from the MQW structures. The peak energies for the MQW structures with different well widths shifted to high energy with increasing temperature. The absorption edge of PbSrSe layer was determined by transmission spectra. Meanwhile, we designed and fabricated λ=4.1 μm MQW vertical cavity surface emitting laser (VCSEL). A power output of 40 mW was obtained at room temperature. The room temperature threshold pump density is 200 kW/cm2.

Sign in / Sign up

Export Citation Format

Share Document