Integrated Photonic Electromagnetic Band Gap Antenna with InGaAs/AlInGaAs Multiple Quantum Well Asymmetric Fabry-Perot Modulator

2007 ◽  
Author(s):  
C.H. Chuang ◽  
J.S. Roberts ◽  
A.J. Seeds ◽  
C.P. Liu ◽  
T. Ismail ◽  
...  
Keyword(s):  
Quantum Well ◽  
Band Gap ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Electromagnetic Band Gap ◽  
Fabry Perot

Experimental study on the mechanism governing spectral shifts in low power 670 nm AlGaInP multiple quantum well (MQW) laser diodes over temperature range 5–45 °C

2016 ◽  
Vol 94 (7) ◽  
pp. 640-644 ◽  
Author(s):  
Santosh Chackrabarti ◽  
Dhrub Sharma ◽  
Shereena Joseph ◽  
Tho-alfiqar A. Zaker ◽  
A.K. Hafiz ◽  
...  
Keyword(s):  
Quantum Well ◽  
Low Power ◽  
Band Gap ◽  
Characteristic Temperature ◽  
Multiple Quantum Well ◽  
Laser Diodes ◽  
Threshold Current ◽  
Multiple Quantum ◽  
Spectral Shifts ◽  
Band Gap Narrowing

We report on the temperature-dependent spectral shifts in low power 670 nm AlGaInP multiple quantum well red laser diodes due to band gap narrowing at room temperatures (5–45 °C). The spectral shift mechanism is explored with a threshold current density of 11.41 kA/cm2 and a good characteristic temperature of 114 K. The photoluminescence peak intensity shifts towards higher wavelengths and the full width at half maximum increases with increase in temperature from 5 to 45 °C. We use a Hamiltonian system considering the effective mass approximation to formulate the carrier concentrations. The band gap narrowing value determined by a simple formula amounts to 59.15 meV and displays N1/3 dependence at higher densities. The carrier density dependence conveys that the redshift of the spectral emission is due to band gap narrowing.

Analysis of mode-hopping effect in Fabry–Pérot multiple-quantum well laser diodes via low frequency noise investigation

2013 ◽  
Vol 79 ◽  
pp. 104-110 ◽  
Author(s):  
Sandra Pralgauskaitė ◽  
Vilius Palenskis ◽  
Jonas Matukas ◽  
Bronius Šaulys ◽  
Vladimir Kornijčuk ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Laser Diodes ◽  
Low Frequency ◽  
Frequency Noise ◽  
Multiple Quantum ◽  
Quantum Well Laser ◽  
Fabry Perot ◽  
Mode Hopping ◽  
Multiple Quantum Well Laser

HIGH-SPEED RESPONSE OF GaAs/AlGaAs MULTIPLE QUANTUM WELL (MQW) ASYMMETRIC FABRY PEROT (ASFP) REFLECTION MODULATOR

1993 ◽  
Vol 07 (08) ◽  
pp. 533-541
Author(s):  
M. NAWAZ ◽  
B. T. OLSEN ◽  
K. McILVANEY
Keyword(s):  
Quantum Well ◽  
High Speed ◽  
Multiple Quantum Well ◽  
Contrast Ratio ◽  
Multiple Quantum ◽  
Driving Voltage ◽  
Operating Wavelength ◽  
Response Bandwidth ◽  
Fabry Perot ◽  
Speed Response

The results of the high-speed response of GaAs/AlGaAs multiple quantum well (MQW) based asymmetric Fabry Perot (ASFP) reflection modulator are presented. The measured 3 dB electrical frequency response bandwidth of the modulator was 600 MHz. The contrast ratio of the modulator was 8.9 dB for a driving voltage of 13 V, at an operating wavelength of 862 nm.

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