Short-wavelength (638 nm) room-temperature CW operation of InGaAlP laser diodes with quaternary active layer

1990 ◽  
Vol 26 (3) ◽  
pp. 211 ◽  
Author(s):  
M. Ishikawa ◽  
H. Shiozawa ◽  
Y. Tsuburai ◽  
Y. Uematsu
Keyword(s):  
Active Layer ◽  
Short Wavelength ◽  
Room Temperature ◽  
Laser Diodes ◽  
Cw Operation

scholarly journals Room Temperature CW Operation of GaN-based Blue Laser Diodes by GaInN/GaN optical guiding layers

2000 ◽  
Vol 5 (S1) ◽  
pp. 1-7 ◽  
Author(s):  
Masayoshi Koike ◽  
Shiro Yamasaki ◽  
Yuta Tezen ◽  
Seiji Nagai ◽  
Sho Iwayama ◽  
...  
Keyword(s):  
Room Temperature ◽  
Continuous Wave ◽  
Laser Diodes ◽  
Threshold Current ◽  
Crystal Defects ◽  
Blue Laser ◽  
Buffer Layers ◽  
Continuous Wave Laser ◽  
Cw Operation ◽  
First Time

GaN-based short wavelength laser diodes are the most promising key device for a digital versatile disk. We have been improving the important points of the laser diodes in terms of optical guiding layers, mirror facets. The continuous wave laser irradiation at room temperature could be achieved successfully by reducing the threshold current to 60 mA (4 kA/cm2). We have tried to apply the multi low temperature buffer layers to the laser diodes for the first time to reduce the crystal defects.

Near Room Temperature CW Operation of 660 nm Visible AlGaAs Multi-Quantum-Well Laser Diodes Grown by Molecular Beam Epitaxy

1985 ◽  
Vol 24 (Part 2, No. 12) ◽  
pp. L911-L913 ◽  
Author(s):  
Hidetoshi Iwamura ◽  
Tadashi Saku ◽  
Yoshiro Hirayama ◽  
Yoshifumi Suzuki ◽  
Hiroshi Okamoto
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Room Temperature ◽  
Molecular Beam ◽  
Laser Diodes ◽  
Quantum Well Laser ◽  
Cw Operation ◽  
Multi Quantum Well

Room-temperature CW operation of GaSb laser diodes grown on on-axis (001) Si substrates (Conference Presentation)

2020 ◽  
Author(s):  
Marta Rio Calvo ◽  
Jean Baptiste Rodriguez ◽  
Laurent Cerutti ◽  
Laura Monge Bartolome ◽  
Michael Bahriz ◽  
...  
Keyword(s):  
Room Temperature ◽  
Laser Diodes ◽  
Si Substrates ◽  
Cw Operation

661.7 nm room-temperature CW operation of AlGaInP double-heterostructure lasers with aluminium-containing quaternary active layer

1985 ◽  
Vol 21 (24) ◽  
pp. 1162 ◽  
Author(s):  
K. Kobayashi ◽  
S. Kawata ◽  
A. Gomyo ◽  
I. Hino ◽  
T. Suzuki
Keyword(s):  
Active Layer ◽  
Room Temperature ◽  
Double Heterostructure ◽  
Cw Operation

High-power (106 mW) CW operation of transverse-mode stabilised InGaAlP laser diodes with strained In0.62Ga0.38P active layer

1991 ◽  
Vol 27 (18) ◽  
pp. 1660 ◽  
Author(s):  
K. Nitta ◽  
K. Itaya ◽  
Y. Nishikawa ◽  
M. Ishikawa ◽  
M. Okajima ◽  
...  
Keyword(s):  
Active Layer ◽  
High Power ◽  
Laser Diodes ◽  
Transverse Mode ◽  
Cw Operation

Movpe Growth of High Quality AlxGa1−xN/GayIn1-yN (x>0, y<1) Heterostructures for Short Wavelength Light Emitter

1994 ◽  
Vol 339 ◽  
Author(s):  
I. Akasaki ◽  
H. Amano
Keyword(s):  
Active Layer ◽  
Short Wavelength ◽  
Room Temperature ◽  
Optical Pumping ◽  
Molar Fraction ◽  
Stimulated Emission ◽  
Edge Mode ◽  
Peak Wavelength ◽  
High Quality ◽  
Low Threshold

ABSTRACTHigh-quality AlGaN/GaN and AlGaN/GalnN DHs were fabricated by MOVPE using low-temperature deposited AlN buffer layer. We applied the newly designed dual-flow-channel reactor, by which high-quality and well-controlled AlGaN and GalnN alloys and their heterostructures have been grown. AlGaN/GaN-DH shows low-threshold stimulated emission by optical pumping at room temperature for both edge and surface modes. The peak wavelength of stimulated emission for edge mode was 369.5nm. The peak wavelength of stimulated emission was affected by the strain due to heterostructure as well as the many body effect under high excitation. The wavelength for stimulated emission can be widely changed by using GalnN as the active layer. AlGaN/GalnN DH with InN molar fraction of the active layer of 0.09 shows room temperature low-threshold stimulated emission for edge mode by optical pumping with peak wavelength of 402.5nm. A few mW-class symmetrical AlGaN/GaN DH LED and anti symmetrical AlGaN/GalnN/GaN DH LED using low energy electron beam irradiation (LEEB1) treated Mg-doped P-AlGaN cladding layer were fabricated. These results show that column-Ill nitrides are promising for the realization of practical short wavelength LED and LD.

Low-threshold room-temperature CW operation of ZnSe-based blue/green laser diodes grown on conductive ZnSe substrates

1998 ◽  
Vol 34 (5) ◽  
pp. 496 ◽  
Author(s):  
F. Nakanishi ◽  
H. Doi ◽  
N. Okuda ◽  
T. Matsuoka ◽  
K. Katayama ◽  
...  
Keyword(s):  
Room Temperature ◽  
Laser Diodes ◽  
Green Laser ◽  
Cw Operation ◽  
Low Threshold
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