Blue Semiconductor Lasers. Room-Temperature CW Operation of GaN Based Laser Diodes.

1997 ◽  
Vol 25 (7) ◽  
pp. 498-503 ◽  
Author(s):  
Shuji NAKAMURA
Keyword(s):  
Semiconductor Lasers ◽  
Room Temperature ◽  
Laser Diodes ◽  
Cw Operation

scholarly journals Room Temperature CW Operation of GaN-based Blue Laser Diodes by GaInN/GaN optical guiding layers

2000 ◽  
Vol 5 (S1) ◽  
pp. 1-7 ◽  
Author(s):  
Masayoshi Koike ◽  
Shiro Yamasaki ◽  
Yuta Tezen ◽  
Seiji Nagai ◽  
Sho Iwayama ◽  
...  
Keyword(s):  
Room Temperature ◽  
Continuous Wave ◽  
Laser Diodes ◽  
Threshold Current ◽  
Crystal Defects ◽  
Blue Laser ◽  
Buffer Layers ◽  
Continuous Wave Laser ◽  
Cw Operation ◽  
First Time

GaN-based short wavelength laser diodes are the most promising key device for a digital versatile disk. We have been improving the important points of the laser diodes in terms of optical guiding layers, mirror facets. The continuous wave laser irradiation at room temperature could be achieved successfully by reducing the threshold current to 60 mA (4 kA/cm2). We have tried to apply the multi low temperature buffer layers to the laser diodes for the first time to reduce the crystal defects.

Near Room Temperature CW Operation of 660 nm Visible AlGaAs Multi-Quantum-Well Laser Diodes Grown by Molecular Beam Epitaxy

1985 ◽  
Vol 24 (Part 2, No. 12) ◽  
pp. L911-L913 ◽  
Author(s):  
Hidetoshi Iwamura ◽  
Tadashi Saku ◽  
Yoshiro Hirayama ◽  
Yoshifumi Suzuki ◽  
Hiroshi Okamoto
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Room Temperature ◽  
Molecular Beam ◽  
Laser Diodes ◽  
Quantum Well Laser ◽  
Cw Operation ◽  
Multi Quantum Well

Room-temperature CW operation of GaSb laser diodes grown on on-axis (001) Si substrates (Conference Presentation)

2020 ◽  
Author(s):  
Marta Rio Calvo ◽  
Jean Baptiste Rodriguez ◽  
Laurent Cerutti ◽  
Laura Monge Bartolome ◽  
Michael Bahriz ◽  
...  
Keyword(s):  
Room Temperature ◽  
Laser Diodes ◽  
Si Substrates ◽  
Cw Operation

SEMICONDUCTOR LASERS FOR EFFICIENT AND RELIABLE CW OPERATION IN THE MID- AND FAR-INFRARED: INTERSUBBAND QUANTUM-BOX LASERS

2007 ◽  
Vol 06 (03n04) ◽  
pp. 203-207 ◽  
Author(s):  
DAN BOTEZ
Keyword(s):  
Semiconductor Lasers ◽  
Room Temperature ◽  
Far Infrared ◽  
Single Stage ◽  
Preliminary Results ◽  
Quantum Cascade ◽  
Cw Operation ◽  
2D Arrays ◽  
Nanoscale Level

Intersubband quantum-box (IQB) lasers, that is, devices consisting of 2D arrays of single-stage intersubband QB emitters, are proposed, as an alternative to 30-stage quantum-cascade (QC) devices, as sources for efficient room-temperature (RT) emission in the mid- and far-IR (3–5 and 8–12 μm) wavelength ranges. Preliminary results include: (1) the realization of the first mid-IR (λ = 4.7 μ m ) single-stage emitters operating at RT; (2) etch-and-regrowth at the nanoscale level by employing in situ gas etching and MOCVD regrowth; (3) the formation of 30 nm-diameter SiO 2 posts on 80 nm centers, thus forming the mask for the fabrication of IQBs via in situ etch and regrowth.

Low-threshold room-temperature CW operation of ZnSe-based blue/green laser diodes grown on conductive ZnSe substrates

1998 ◽  
Vol 34 (5) ◽  
pp. 496 ◽  
Author(s):  
F. Nakanishi ◽  
H. Doi ◽  
N. Okuda ◽  
T. Matsuoka ◽  
K. Katayama ◽  
...  
Keyword(s):  
Room Temperature ◽  
Laser Diodes ◽  
Green Laser ◽  
Cw Operation ◽  
Low Threshold

Room Temperature CW Operation of GaN-Based Blue Laser Diodes by GaInN/GaN Optical Guiding Layers

1999 ◽  
Vol 595 ◽  
Author(s):  
Masayoshi Koike ◽  
Shiro Yamasaki ◽  
Yuta Tezen ◽  
Seiji Nagai ◽  
Sho Iwayama ◽  
...  
Keyword(s):  
Room Temperature ◽  
Continuous Wave ◽  
Laser Diodes ◽  
Threshold Current ◽  
Crystal Defects ◽  
Blue Laser ◽  
Buffer Layers ◽  
Continuous Wave Laser ◽  
Cw Operation ◽  
First Time

AbstractGaN-based short wavelength laser diodes are the most promising key device for a digital versatile disk. We have been improving the important points of the laser diodes in terms of optical guiding layers, mirror facets. The continuous wave laser irradiation at room temperature could be achieved successfully by reducing the threshold current to 60 mA (4 kA/cm2). We have tried to apply the multi low temperature buffer layers to the laser diodes for the first time to reduce the crystal defects.

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