High-power (106 mW) CW operation of transverse-mode stabilised InGaAlP laser diodes with strained In0.62Ga0.38P active layer

1991 ◽  
Vol 27 (18) ◽  
pp. 1660 ◽  
Author(s):  
K. Nitta ◽  
K. Itaya ◽  
Y. Nishikawa ◽  
M. Ishikawa ◽  
M. Okajima ◽  
...  
Keyword(s):  
Active Layer ◽  
High Power ◽  
Laser Diodes ◽  
Transverse Mode ◽  
Cw Operation

Reliable high-power (40 mW) operation of transverse-mode stabilised InGaAlP laser diodes with strained active layer

1992 ◽  
Vol 28 (11) ◽  
pp. 1069-1070 ◽  
Author(s):  
K. Nitta ◽  
M. Okajima ◽  
Y. Nishikawa ◽  
K. Itaya ◽  
G. Hatakoshi
Keyword(s):  
Active Layer ◽  
High Power ◽  
Laser Diodes ◽  
Transverse Mode

High-power operation of 630 nm-band transverse-mode stabilised AlGaInP laser diodes with current-blocking region near facets

1991 ◽  
Vol 27 (8) ◽  
pp. 661 ◽  
Author(s):  
H. Hamada ◽  
M. Shono ◽  
S. Honda ◽  
R. Hiroyama ◽  
K. Matsukawa ◽  
...  
Keyword(s):  
High Power ◽  
Laser Diodes ◽  
Transverse Mode ◽  
High Power Operation ◽  
Power Operation ◽  
Current Blocking

High power 630 nm band laser diodes with strain-compensated single quantum well active layer

1997 ◽  
Vol 33 (12) ◽  
pp. 1084 ◽  
Author(s):  
R. Hiroyama ◽  
T. Uetani ◽  
Y. Bessho ◽  
M. Shono ◽  
M. Sawada ◽  
...  
Keyword(s):  
Quantum Well ◽  
Active Layer ◽  
High Power ◽  
Laser Diodes ◽  
Single Quantum ◽  
Single Quantum Well

High Power Operation of InGaP/InAlP Transverse Mode Stabilized Laser Diodes

1987 ◽  
Author(s):  
Masayuki ISHIKAWA ◽  
Kazuhiko ITAYA ◽  
Yukio WATANABE ◽  
Gen-ichi HATAKOSHI ◽  
Hideto SUGAWARA ◽  
...  
Keyword(s):  
High Power ◽  
Laser Diodes ◽  
Transverse Mode ◽  
High Power Operation ◽  
Power Operation

ROLE OF DISLOCATIONS IN InGaN-BASED LEDs AND LASER DIODES

2000 ◽  
Vol 10 (01) ◽  
pp. 271-279 ◽  
Author(s):  
SHUJI NAKAMURA
Keyword(s):  
Quantum Well ◽  
Output Power ◽  
Continuous Wave ◽  
Laser Diodes ◽  
Transverse Mode ◽  
High Current ◽  
Single Quantum Well ◽  
Cw Operation ◽  
Current Operation ◽  
Composition Fluctuations

UV InGaN and GaN single-quantum-well structure light-emitting diodes (LEDs) were grown on epitaxially laterally overgrown (ELOG) and sapphire substrates. When the emission wavelength of UV InGaN LEDs was shorter than 380 nm, the external quantum efficiency (EQE) of the LED on ELOG was much higher than that on sapphire only at high-current operation. At low-current operation, both LEDs had the same EQE. When the active layer was GaN, EQE of the LED on sapphire was much lower than that on ELOG at both low- and high-current operation due to the lack of localized energy states formed by In composition fluctuations. In order to improve the lifetime of laser diodes (LDs), ELOG had to be used because the operating current density of the LDs is much higher than that of LEDs. A violet InGaN multi-quantum-well GaN/AlGaN separate-confinement-heterostructure LD was grown on ELOG on sapphire. The LDs with cleaved mirror facets shows an output power as high as 40 mW under room-temperature continuous-wave (CW) operation. The stable fundamental transverse mode was observed at an output power of up to 40 mW. The estimated lifetime of the LDs at a constant output power of 10 mW was more than 2,000 hours under CW operation at an ambient temperature of 60°C.

High Power Operation of InGaAlP Visible Light Laser Diodes with an In0.62Ga0.38P Active Layer

1991 ◽  
Author(s):  
K. Nitta ◽  
K. Itaya ◽  
Y. Nishikawa ◽  
M. Ishikawa ◽  
M. Okajima ◽  
...  
Keyword(s):  
Visible Light ◽  
Active Layer ◽  
High Power ◽  
Laser Diodes ◽  
High Power Operation ◽  
Power Operation

Reliable High-Power Operation of InGaAlP Visible Light Laser Diodes with Strained Active Layer

1991 ◽  
Vol 30 (Part 1, No. 12B) ◽  
pp. 3862-3864 ◽  
Author(s):  
Koichi Nitta ◽  
Kazuhiko Itaya ◽  
Yukie Nishikawa ◽  
Masayuki Ishikawa ◽  
Masaki Okajima ◽  
...  
Keyword(s):  
Visible Light ◽  
Active Layer ◽  
High Power ◽  
Laser Diodes ◽  
High Power Operation ◽  
Power Operation

Highly Reliable Transverse-Mode Stabilized InGaAlP Visible Light Laser Diodes at High-Power Operation

1991 ◽  
Vol 30 (Part 2, No. 4A) ◽  
pp. L590-L592 ◽  
Author(s):  
Kazuhiko Itaya ◽  
Masayuki Ishikawa ◽  
Koichi Nitta ◽  
Masaki Okajima ◽  
Gen-ichi Hatakoshi
Keyword(s):  
Visible Light ◽  
High Power ◽  
Laser Diodes ◽  
Transverse Mode ◽  
High Power Operation ◽  
Power Operation

High-power 980-nm ridge waveguide laser diodes including an asymmetrically expanded optical field normal to the active layer

2002 ◽  
Vol 38 (8) ◽  
pp. 1081-1088 ◽  
Author(s):  
K.I. Shigihara ◽  
K. Kawasaki ◽  
Y. Yoshida ◽  
S. Yamamura ◽  
T. Yagi ◽  
...  
Keyword(s):  
Active Layer ◽  
High Power ◽  
Laser Diodes ◽  
Ridge Waveguide ◽  
Optical Field ◽  
Waveguide Laser ◽  
Ridge Waveguide Laser

High-Power InGaN-Based Violet Laser Diodes with a Fundamental Transverse Mode

1999 ◽  
Author(s):  
Shuji Nakamura ◽  
Masayuki Senoh ◽  
Shin-ichi Nagahama ◽  
Toshio Matsushita ◽  
Takashi Mukai
Keyword(s):  
High Power ◽  
Laser Diodes ◽  
Transverse Mode
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