Low-threshold room-temperature CW operation of ZnSe-based blue/green laser diodes grown on conductive ZnSe substrates

1998 ◽  
Vol 34 (5) ◽  
pp. 496 ◽  
Author(s):  
F. Nakanishi ◽  
H. Doi ◽  
N. Okuda ◽  
T. Matsuoka ◽  
K. Katayama ◽  
...  
Keyword(s):  
Room Temperature ◽  
Laser Diodes ◽  
Green Laser ◽  
Cw Operation ◽  
Low Threshold

545 nm Room-Temperature Continuous-Wave Operation of BeZnCdSe Quantum-Well Green Laser Diodes with Low Threshold Current Density

2010 ◽  
Vol 3 (9) ◽  
pp. 091201 ◽  
Author(s):  
Jun-ichi Kasai ◽  
Ryouichi Akimoto ◽  
Haruhiko Kuwatsuka ◽  
Toshifumi Hasama ◽  
Hiroshi Ishikawa ◽  
...  
Keyword(s):  
Quantum Well ◽  
Current Density ◽  
Room Temperature ◽  
Continuous Wave ◽  
Laser Diodes ◽  
Threshold Current ◽  
Green Laser ◽  
Threshold Current Density ◽  
Continuous Wave Operation ◽  
Low Threshold

scholarly journals Room Temperature CW Operation of GaN-based Blue Laser Diodes by GaInN/GaN optical guiding layers

2000 ◽  
Vol 5 (S1) ◽  
pp. 1-7 ◽  
Author(s):  
Masayoshi Koike ◽  
Shiro Yamasaki ◽  
Yuta Tezen ◽  
Seiji Nagai ◽  
Sho Iwayama ◽  
...  
Keyword(s):  
Room Temperature ◽  
Continuous Wave ◽  
Laser Diodes ◽  
Threshold Current ◽  
Crystal Defects ◽  
Blue Laser ◽  
Buffer Layers ◽  
Continuous Wave Laser ◽  
Cw Operation ◽  
First Time

GaN-based short wavelength laser diodes are the most promising key device for a digital versatile disk. We have been improving the important points of the laser diodes in terms of optical guiding layers, mirror facets. The continuous wave laser irradiation at room temperature could be achieved successfully by reducing the threshold current to 60 mA (4 kA/cm2). We have tried to apply the multi low temperature buffer layers to the laser diodes for the first time to reduce the crystal defects.

Low-threshold laser diodes based on type-II GaInAsSb/GaSb quantum-wells operating at 2.36 [micro sign]m at room temperature

1996 ◽  
Vol 32 (24) ◽  
pp. 2279 ◽  
Author(s):  
A.N. Baranov ◽  
Y. Cuminal ◽  
G. Boissier ◽  
C. Alibert ◽  
A. Joullié
Keyword(s):  
Quantum Wells ◽  
Room Temperature ◽  
Laser Diodes ◽  
Type Ii ◽  
Low Threshold

Near Room Temperature CW Operation of 660 nm Visible AlGaAs Multi-Quantum-Well Laser Diodes Grown by Molecular Beam Epitaxy

1985 ◽  
Vol 24 (Part 2, No. 12) ◽  
pp. L911-L913 ◽  
Author(s):  
Hidetoshi Iwamura ◽  
Tadashi Saku ◽  
Yoshiro Hirayama ◽  
Yoshifumi Suzuki ◽  
Hiroshi Okamoto
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Room Temperature ◽  
Molecular Beam ◽  
Laser Diodes ◽  
Quantum Well Laser ◽  
Cw Operation ◽  
Multi Quantum Well

Low‐threshold room‐temperature cw operation of (AlGaAs)m(GaAs)nsuperlattice quantum well lasers emitting at ∼680 nm

1987 ◽  
Vol 51 (10) ◽  
pp. 707-709 ◽  
Author(s):  
T. Hayakawa ◽  
T. Suyama ◽  
K. Takahashi ◽  
M. Kondo ◽  
S. Yamamoto ◽  
...  
Keyword(s):  
Quantum Well ◽  
Room Temperature ◽  
Quantum Well Lasers ◽  
Cw Operation ◽  
Low Threshold

Room-temperature CW operation of GaSb laser diodes grown on on-axis (001) Si substrates (Conference Presentation)

2020 ◽  
Author(s):  
Marta Rio Calvo ◽  
Jean Baptiste Rodriguez ◽  
Laurent Cerutti ◽  
Laura Monge Bartolome ◽  
Michael Bahriz ◽  
...  
Keyword(s):  
Room Temperature ◽  
Laser Diodes ◽  
Si Substrates ◽  
Cw Operation

Room temperature continuous operation of blue-green laser diodes

1993 ◽  
Vol 29 (16) ◽  
pp. 1488 ◽  
Author(s):  
N. Nakayama ◽  
S. Itoh ◽  
T. Ohata ◽  
K. Nakano ◽  
H. Okuyama ◽  
...  
Keyword(s):  
Room Temperature ◽  
Laser Diodes ◽  
Green Laser ◽  
Continuous Operation
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