Cryogenic temperature performance of modulation-doped field-effect transistors

1989 ◽  
Vol 25 (12) ◽  
pp. 777 ◽  
Author(s):  
J. Kolodzey ◽  
J. Laskar ◽  
S. Boor ◽  
S. Reis ◽  
A. Ketterson ◽  
...  
2018 ◽  
Vol 4 (3) ◽  
pp. 1700580 ◽  
Author(s):  
Lu Han ◽  
Daniel M. Balazs ◽  
Artem G. Shulga ◽  
Mustapha Abdu-Aguye ◽  
Wanli Ma ◽  
...  

1995 ◽  
Vol 410 ◽  
Author(s):  
H. Aydin ◽  
M. W. Dryfuse ◽  
M. Tabib-Azar

ABSTRACTFast and slow interface traps can considerably deteriorate the performance of field effect transistors. Slow interface traps, by slowly changing their charge occupancy, contribute to a drift in the quiescent operation point of the transistor, while fast traps deteriorate the device performance by contributing to both amplitude and phase current noise. They also result in a non-equilibrium surface depletion layer between gate and source which increases the gate-to-source parasitic resistance and deteriorates the device transconductance. We examine these different effects and present some preliminary data regarding interface traps in boron-doped 611-SiC.


2008 ◽  
Author(s):  
Takafumi Uemura ◽  
Masakazu Yamagishi ◽  
Yukihiro Tominari ◽  
Jun Takeya

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