The Influence of Interface Traps on the High Frequency and High Temperature Performance of SiC Field Effect Transistors

1995 ◽  
Vol 410 ◽  
Author(s):  
H. Aydin ◽  
M. W. Dryfuse ◽  
M. Tabib-Azar
Keyword(s):  
High Temperature ◽  
Preliminary Data ◽  
High Frequency ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Device Performance ◽  
Interface Traps ◽  
Boron Doped ◽  
Temperature Performance ◽  
Parasitic Resistance

ABSTRACTFast and slow interface traps can considerably deteriorate the performance of field effect transistors. Slow interface traps, by slowly changing their charge occupancy, contribute to a drift in the quiescent operation point of the transistor, while fast traps deteriorate the device performance by contributing to both amplitude and phase current noise. They also result in a non-equilibrium surface depletion layer between gate and source which increases the gate-to-source parasitic resistance and deteriorates the device transconductance. We examine these different effects and present some preliminary data regarding interface traps in boron-doped 611-SiC.

HIGH FREQUENCY, HIGH TEMPERATURE FIELD-EFFECT TRANSISTORS FABRICATED FROM WIDE BAND GAP SEMICONDUCTORS

1995 ◽  
Vol 06 (01) ◽  
pp. 211-236 ◽  
Author(s):  
R.J. TREW ◽  
M.W. SHIN
Keyword(s):  
High Temperature ◽  
Band Gap ◽  
Microwave Power ◽  
High Frequency ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Wide Band ◽  
Superior Performance ◽  
Wide Band Gap ◽  
Wide Band Gap Semiconductors

Electronic and optical devices fabricated from wide band gap semiconductors have many properties ideal for high temperature, high frequency, high power, and radiation hard applications. Progress in wide band gap semiconductor materials growth has been impressive and high quality epitaxial layers are becoming available. Useful devices, particularly those fabricated from SiC, are rapidly approaching the commercialization stage. In particular, MESFETs (MEtal Semiconductor Field-Effect Transistors) fabricated from wide band gap semiconductors have the potential to be useful in microwave power amplifier and oscillator applications. In this work the microwave performance of MESFETs fabricated from SiC, GaN and semiconducting diamond is investigated with a theoretical simulator and the results compared to experimental measurements. Excellent agreement between the simulated and measured data is obtained. It is demonstrated that microwave power amplifiers fabricated from these semiconductors offer superior performance, particularly at elevated temperatures compared to similar components fabricated from the commonly employed GaAs MESFETs.

Development of a Wire-Bonding-Less SiC Power Module Operating over a Wide Temperature Range

2016 ◽  
Vol 858 ◽  
pp. 1066-1069 ◽  
Author(s):  
Shinya Sato ◽  
Hidekazu Tanisawa ◽  
Takeshi Anzai ◽  
Hiroki Takahashi ◽  
Yoshinori Murakami ◽  
...  
Keyword(s):  
High Temperature ◽  
Wide Temperature Range ◽  
High Frequency ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Power Module ◽  
Active Metal ◽  
Switching Characteristics

In this paper, we describe a power module fabricated using SiC metal–oxide–semiconductor field-effect transistors (MOSFETs). A C-R snubber is integrated into this power module for reduction of the surge voltage and dumping of the voltage ringing. The four SiC MOSFETs are sandwiched between active metal copper (AMC) substrates. The surfaces of the SiC MOSFETs are attached to AMC substrates by Al bumps, owing to which the power module shows low inductance. Moreover, this power module ensures credibility and reliability at higher operating temperatures beyond 200 °C. The switching characteristics of the module are studied experimentally for high-temperature and high-frequency operations.

Radio-Frequency Power Transistors Based on 6H- and 4H-SiC

MRS Bulletin ◽  
1997 ◽  
Vol 22 (3) ◽  
pp. 50-56 ◽  
Author(s):  
Karen Moore ◽  
Robert J. Trew
Keyword(s):  
Radio Frequency ◽  
Output Power ◽  
High Power ◽  
High Frequency ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Device Performance ◽  
Rf Power ◽  
Power Transistors ◽  
Power Densities

In recent years, SiC has received a great deal of attention as a nearly ideal material for the fabrication of high-speed, high-power transistors. The high electric breakdown field of 3.8 × 106 V/cm, high saturated electron drift velocity of 2 × 107 cm/s, and high thermal conductivity of 4.9 W/cm K indicate SiC's potential for high-power, high-frequency operation. A wide bandgap should also allow SiC field-effect transistors (FETs) to have high radio-frequency (rf) output power at high temperatures.These material qualities have been verified through outstanding device performance. Recent results for SiC metal-semiconductor field-effect transistors (MESFETs) have included superior frequency and power performance, with power gain at frequencies as high as 40 GHz and power densities as high as 3.3 W/mm. This represents significantly higher operating frequencies and power densities than current Si rf power FET technology, and nearly three times the power density of GaAs MESFETs, which are currently used in many commercial rf power applications. Similarly, SiC static induction transistors (SITs) have much higher power densities than their Si counterparts and have recently been demonstrated in modules with as much as 470-W total pulsed output power. This article describes microwave device operation, discusses material properties needed for rf power generation, and summarizes state-of-the-art SiC high-frequency device performance. Emphasis is placed on MESFETs and SITs since they are currently the most mature SiC-based device technologies.

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