GaAs‐InGaAs double delta‐doped quantum‐well switching device prepared by molecular beam epitaxy

1993 ◽  
Vol 62 (13) ◽  
pp. 1504-1506 ◽  
Author(s):  
Wei‐Chou Hsu ◽  
Wen‐Chau Liu ◽  
Der‐Feng Guo ◽  
Wen‐Shiung Lour
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Switching Device

GaAs‐InGaAs quantum‐well resonant‐tunneling switching device grown by molecular beam epitaxy

1994 ◽  
Vol 64 (20) ◽  
pp. 2685-2687 ◽  
Author(s):  
Wen‐Chau Liu ◽  
Der‐Feng Guo ◽  
Shiuh‐Ren Yih ◽  
Jing‐Tong Liang ◽  
Lih‐Wen Liah ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Resonant Tunneling ◽  
Molecular Beam ◽  
Switching Device ◽  
Ingaas Quantum Well

High performance InGaAsP/InP semiconductor quantum well lasers realized by gas source molecular beam epitaxy

1992 ◽  
Vol 2 (9) ◽  
pp. 1727-1738 ◽  
Author(s):  
A. Accard ◽  
F. Brillouet ◽  
E. Duda ◽  
B. Fernier ◽  
G. Gelly ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
High Performance ◽  
Molecular Beam ◽  
Quantum Well Lasers ◽  
Gas Source ◽  
Semiconductor Quantum Well

Optical Properties of Zn1-xCdxSe/ZnSe Quantum Well Lasers Fabricated by Molecular Beam Epitaxy

1996 ◽  
Vol 203 ◽  
pp. 261-266
Author(s):  
L. Calcagnile ◽  
G. Colì ◽  
R. Cingolani ◽  
L. Vanzetti ◽  
L. Sorba ◽  
...  
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Quantum Well Lasers

GaInAs(P)/InP quantum well structures grown by gas source molecular beam epitaxy

1985 ◽  
Vol 47 (4) ◽  
pp. 394-396 ◽  
Author(s):  
H. Temkin ◽  
M. B. Panish ◽  
P. M. Petroff ◽  
R. A. Hamm ◽  
J. M. Vandenberg ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Quantum Well Structures ◽  
Gas Source
Sign in / Sign up

Export Citation Format

Share Document