GaAlAs/GaAs heterojunction bipolar phototransistors grown by LPE with a current gain of 50 000

1985 ◽  
Vol 21 (24) ◽  
pp. 1124 ◽  
Author(s):  
A. Cazarre ◽  
J. Tasselli ◽  
A. Marty ◽  
J.P. Bailbe ◽  
G. Rey
Keyword(s):  
Current Gain ◽  
A Current

Measurements and Simulations of Lateral PNP Transistors in a SiC NPN BJT Technology for High Temperature Integrated Circuits

2011 ◽  
Vol 679-680 ◽  
pp. 758-761 ◽  
Author(s):  
Luigia Lanni ◽  
Reza Ghandi ◽  
Martin Domeij ◽  
Carl Mikael Zetterling ◽  
Bengt Gunnar Malm ◽  
...  
Keyword(s):  
High Temperature ◽  
Integrated Circuits ◽  
High Voltage ◽  
Current Gain ◽  
A Current

In this work, a 4H-SiC lateral PNP transistor fabricated in a high voltage NPN technology has been simulated and characterized. The possibility of fabricating a lateral PNP with a current gain larger than 1 has been investigated. Device and circuit level solutions have been performed.

A Recessed-Gate In0.52Al0.48As/n+-In0.53Ga0.47As Misfet

1988 ◽  
Vol 144 ◽  
Author(s):  
Jesús A. del Alamo ◽  
Takashi Mizutani
Keyword(s):  
High Performance ◽  
Current Gain ◽  
Device Performance ◽  
Promising Candidate ◽  
Gate Structure ◽  
Source Resistance ◽  
Heavily Doped ◽  
Recessed Gate ◽  
Improve Device ◽  
A Current

ABSTRACTScaling of the In0.52Al0.48As insulator thickness of In0.52Al0.48As/n+-In0.53Ga0.47As MIStype FET's is experimentally found to result in a drastic drop of performance below 200 Å. This is demonstrated to arise from an increase in the sheet resistance of the extrinsic portions of the device that accompanies insulator scaling. In order to solve this problem, a recessed-gate dopedchannel MISFET with a very thin (300 Å) n+-In0.53Ga0.47As cap layer has been fabricated. A 1.5 μm long gate device showed a transconductance of 285 mS/mm and a current-gain cut-off frequency of 19.4 GHz. This result proves the ability of a thin n+-In0.53Ga0.47As cap to reduce source resistance and improve device performance. The fabricated recessed-gate structure is a promising candidate for high-performance scaled MIS-type FET's based on thin, heavily-doped In0.53Gav0.47 As channels.

Double heterojunction AlxGa1-xAs/GaAs bipolar transistors (DHBJT's) by MBE with a current gain of 1650

1983 ◽  
Vol 4 (5) ◽  
pp. 130-132 ◽  
Author(s):  
S.L. Su ◽  
O. Tejayadi ◽  
T.J. Drummond ◽  
R. Fischer ◽  
H. Morkoc
Keyword(s):  
Bipolar Transistors ◽  
Current Gain ◽  
Double Heterojunction ◽  
A Current

Comparison of Current-Induced Migration of Be and C in GaAs/AlGaAs HBTs

1992 ◽  
Vol 262 ◽  
Author(s):  
F. Ren ◽  
T. R. Fullowan ◽  
J. R. Lothian ◽  
P. W. Wisk ◽  
C. R. Abernathy ◽  
...  
Keyword(s):  
Current Density ◽  
Ideality Factor ◽  
Current Gain ◽  
Rapid Degradation ◽  
Enhanced Diffusion ◽  
Aging Conditions ◽  
The Stability ◽  
Dc Current ◽  
A Current ◽  
Base Doping

ABSTRACTWe contrast the stability under bias-aging conditions of GaAs/AlGaAs HBTs utilizing highly Be- or C-doped base layers. Devices with Be doping display a rapid degradation of dc current gain and junction ideality factor. At 200°C, a 2 × 10 μm2 Be-doped device (4 × 1019cm−3 base doping) operated at a current density of 2.5 × 104 A. cm−2 shows a decrease in gain from 16 to 1.5 within 2h. Under the same conditions a C-doped device with even higher base-doping (7 × 1019 cm−3) is stable over periods of 36h, the longest time we tested our structures. The degradation of Be-doped devices is consistent with the mechanism of recombination-enhanced diffusion of interstitials into the adjoining layers. Similar results are obtained with Zn-doped devices. Since C occupies the As sub-lattice rather than the Ga sublattice as with Be and Zn, it is not susceptible to reaction with Ga interstitials injected during growth or bias-aging.

4H-SiC Bipolar Junction Transistors with a Current Gain of 108

2008 ◽  
Vol 600-603 ◽  
pp. 1159-1162 ◽  
Author(s):  
Q. Jon Zhang ◽  
Charlotte Jonas ◽  
Albert A. Burk ◽  
Craig Capell ◽  
Jonathan Young ◽  
...  
Keyword(s):  
High Temperatures ◽  
Breakdown Voltage ◽  
Current Gain ◽  
Bipolar Junction Transistors ◽  
High Current ◽  
Emitter Current ◽  
Wide Range ◽  
Operating Temperatures ◽  
A Current

4H-SiC BJTs with a common emitter current gain (b) of 108 at 25°C have been demonstrated. The high current gain was accomplished by using a base as thin as 0.25 μm. The current gain decreases at high temperatures but is still greater than 40 at 300°C. The device demonstrates an open emitter breakdown voltage (BVCBO) of 1150 V, and an open base breakdown voltage (BVCEO) of 250 V. A low specific on-resistance of 3.6 mW-cm2 at 25°C was achieved. The BJTs have shown blocking capabilities over a wide range of operating temperatures up to 300°C.

1000 V, 30 A SiC Bipolar Junction Transistors and Integrated Darlington Pairs

2005 ◽  
Vol 483-485 ◽  
pp. 901-904 ◽  
Author(s):  
Sumi Krishnaswami ◽  
Anant K. Agarwal ◽  
Craig Capell ◽  
Jim Richmond ◽  
Sei Hyung Ryu ◽  
...  
Keyword(s):  
Room Temperature ◽  
Voltage Drop ◽  
Active Area ◽  
Current Gain ◽  
Bipolar Junction Transistors ◽  
Collector Current ◽  
Bipolar Junction Transistor ◽  
Forward Voltage Drop ◽  
Junction Transistor ◽  
A Current

1000 V Bipolar Junction Transistor and integrated Darlington pairs with high current gain have been developed in 4H-SiC. The 3.38 mm x 3.38 mm BJT devices with an active area of 3 mm x 3 mm showed a forward on-current of 30 A, which corresponds to a current density of 333 A/cm2, at a forward voltage drop of 2 V. A common-emitter current gain of 40 was measured on these devices. A specific on-resistance of 6.0 mW-cm2 was observed at room temperature. The onresistance increases at higher temperatures, while the current gain decreases to 30 at 275°C. In addition, an integrated Darlington pair with an active area of 3 mm x 3 mm showed a collector current of 30 A at a forward drop of 4 V at room temperature. A current gain of 2400 was measured on these devices. A BVCEO of 1000 V was measured on both of these devices.

A Current-Gain Scheme for High Density and Low Voltage FeRAM

2003 ◽  
Vol 56 (1) ◽  
pp. 1033-1043 ◽  
Author(s):  
Hee-Bok Kang ◽  
Sung-Sik Kim ◽  
Dong-Yun Jeong ◽  
Jae-Hyoung Lim ◽  
Seung-Jin Yeom ◽  
...  
Keyword(s):  
Low Voltage ◽  
High Density ◽  
Current Gain ◽  
A Current

scholarly journals Digitally Controllable Current Amplifier and Current Conveyors in Practical Application of Controllable Frequency Filter

2016 ◽  
Vol 67 (4) ◽  
pp. 261-266 ◽  
Author(s):  
Josef Polak ◽  
Jan Jerabek ◽  
Lukas Langhammer ◽  
Roman Sotner ◽  
Jan Dvorak ◽  
...  
Keyword(s):  
Current Mode ◽  
Current Gain ◽  
Current Conveyors ◽  
Practical Realization ◽  
Frequency Filter ◽  
Practical Application ◽  
Independent Control ◽  
Current Amplifier ◽  
Single Input ◽  
A Current

Abstract This paper presents the simulations results in comparison with the measured results of the practical realization of the multifunctional second order frequency filter with a Digitally Adjustable Current Amplifier (DACA) and two Dual-Output Controllable Current Conveyors (CCCII +/−). This filter is designed for use in current mode. The filter was designed of the single input multiple outputs (SIMO) type, therefore it has only one input and three outputs with individual filtering functions. DACA element used in a newly proposed circuit is present in form of an integrated chip and the current conveyors are implemented using the Universal Current Conveyor (UCC) chip with designation UCC-N1B. Proposed frequency filter enables independent control of the pole frequency using parameters of two current conveyors and also independent control of the quality factor by change of a current gain of DACA.

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