Low field mobility, effective saturation velocity and performance of submicron GaAs MESFETs

1982 ◽  
Vol 18 (21) ◽  
pp. 909 ◽  
Author(s):  
M.S. Shur
Keyword(s):  
Saturation Velocity ◽  
Low Field ◽  
Field Mobility ◽  
Effective Saturation ◽  
And Performance ◽  
Low Field Mobility

scholarly journals Two-dimensional Carrier Transport in Si MOSFETs

VLSI Design ◽  
1998 ◽  
Vol 8 (1-4) ◽  
pp. 1-11 ◽  
Author(s):  
Shin-Ichi Takagi
Keyword(s):  
Carrier Transport ◽  
Inversion Layer ◽  
Current Drive ◽  
Strained Si ◽  
Limited Mobility ◽  
Saturation Velocity ◽  
Low Field ◽  
Field Mobility ◽  
Quantitative Understanding ◽  
Low Field Mobility

The importance of 2-dimensional (2D) features of carriers in Si MOSFETs on the device performance is re-examined experimentally and theoretically from the viewpoint of low-field mobility, velocity in high tangential fields and the inversion-layer capacitance. It is confirmed that low-field mobility and inversion-layer capacitance can be understood well in terms of the 2D subbands and the 2D carrier transport. In order to obtain fully-quantitative understanding of low-field mobility, however, it is still necessary to more accurately determine the amount of the scattering parameters in the inversion layer. On the other hand, saturation velocity is considered to be less influenced by the 2D quantization, while it is found experimentally that saturation velocity is slightly dependent on surface carrier concentration.According to the knowledge of 2-dimensional carrier transport in Si inversion layer, an effective way to have higher current drive is to increase the occupancy of the 2-fold valleys, which have lower conductivity mass, on a (100) surface. From this viewpoint, two device structures, strained Si MOSFETs and SOI MOSFETs with ultra-thin SOI films, are introduced and the behavior of low-field mobility is analyzed through the calculations of the subband structures and phonon-limited mobility.

scholarly journals Strain-Dependence of Electron Transport in Bulk Si and Deep-Submicron MOSFETs

VLSI Design ◽  
2001 ◽  
Vol 13 (1-4) ◽  
pp. 163-167 ◽  
Author(s):  
F. M. Bufler ◽  
P. D. Yoder ◽  
W. Fichtner
Keyword(s):  
Electron Transport ◽  
Drain Current ◽  
Channel Length ◽  
Deep Submicron ◽  
Strain Dependence ◽  
Saturation Velocity ◽  
Low Field ◽  
Field Mobility ◽  
Maximum Improvement ◽  
Low Field Mobility

The strain-dependence of electron transport in bulk Si and deep-submicron MOSFETs is investigated by full-band Monte Carlo simulation. On the bulk level, the drift velocity at medium field strengths is still enhanced above Ge-contents of 20% in the substrate, where the low-field mobility is already saturated, while the saturation velocity remains unchanged under strain. In an n-MOSFET with a metallurgical channel length of 50nm, the saturation drain current is enhanced by up to 11%, but this maximum improvement is essentially already achieved at a Ge-content of 20% emphasizing the role of the low-field mobility as a key indicator of device performance in the deep-submicron regime.

scholarly journals Low-field mobility in ultrathin silicon nanowire junctionless transistors

2011 ◽  
Vol 99 (23) ◽  
pp. 233509 ◽  
Author(s):  
Bart Sorée ◽  
Wim Magnus ◽  
William Vandenberghe
Keyword(s):  
Silicon Nanowire ◽  
Low Field ◽  
Field Mobility ◽  
Junctionless Transistors ◽  
Low Field Mobility
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