scholarly journals Two-dimensional Carrier Transport in Si MOSFETs

VLSI Design ◽  
1998 ◽  
Vol 8 (1-4) ◽  
pp. 1-11 ◽  
Author(s):  
Shin-Ichi Takagi
Keyword(s):  
Carrier Transport ◽  
Inversion Layer ◽  
Current Drive ◽  
Strained Si ◽  
Limited Mobility ◽  
Saturation Velocity ◽  
Low Field ◽  
Field Mobility ◽  
Quantitative Understanding ◽  
Low Field Mobility

The importance of 2-dimensional (2D) features of carriers in Si MOSFETs on the device performance is re-examined experimentally and theoretically from the viewpoint of low-field mobility, velocity in high tangential fields and the inversion-layer capacitance. It is confirmed that low-field mobility and inversion-layer capacitance can be understood well in terms of the 2D subbands and the 2D carrier transport. In order to obtain fully-quantitative understanding of low-field mobility, however, it is still necessary to more accurately determine the amount of the scattering parameters in the inversion layer. On the other hand, saturation velocity is considered to be less influenced by the 2D quantization, while it is found experimentally that saturation velocity is slightly dependent on surface carrier concentration.According to the knowledge of 2-dimensional carrier transport in Si inversion layer, an effective way to have higher current drive is to increase the occupancy of the 2-fold valleys, which have lower conductivity mass, on a (100) surface. From this viewpoint, two device structures, strained Si MOSFETs and SOI MOSFETs with ultra-thin SOI films, are introduced and the behavior of low-field mobility is analyzed through the calculations of the subband structures and phonon-limited mobility.

scholarly journals Low-field Mobility and High-field Velocity of Charge Carriers in InGaAs/InP High-electron-mobility Transistors

2021 ◽  
Author(s):  
Isabel Harrysson Rodrigues ◽  
Andrei Vorobiev
Keyword(s):  
Carrier Transport ◽  
Peak Velocity ◽  
Transverse Field ◽  
High Electron Mobility Transistors ◽  
Low Noise ◽  
High Electron ◽  
Electron Mobility Transistors ◽  
Low Field ◽  
Field Mobility ◽  
Low Field Mobility

<div>Development of transistors for advanced low noise amplifiers requires better understanding of mechanisms governing the charge carrier transport in correlation with the noise performance. In this paper, we report on study of the carrier velocity in InGaAs/InP high-electron-mobility transistors (HEMTs) found via geometrical magnetoresistance in the wide range of the drain fields, up to 2 kV/cm, at cryogenic temperature of 2 K. We observed, for the first time experimentally, the velocity peaks with peak velocity and corresponding field decreasing significantly with the transverse field. The low-field mobility and peak velocity are found to be up to 65000 cm<sup>2</sup>/Vs and 1.2x10<sup>6</sup> cm/s, respectively. Extrapolations to the lower transverse fields show that the peak velocity can be as high as 2.7x10<sup>7</sup> cm/s. The corresponding intrinsic transit frequency can be up to 172 GHz at the gate length of 250 nm. We demonstrated, for the first time, that the low-field mobility and peak velocity reveal opposite dependencies on the transverse field, indicating the difference in carrier transport mechanisms dominating at low- and high-fields. Therefore, the peak velocity is an appropriate parameter for characterization and development of the low noise HEMTs, complementary to the low-field mobility. The results of the research clarify the ways of the further development of the HEMTs for advanced applications.</div>

A strained Si-channel NMOSFET with low field mobility enhancement of about 140% using a SiGe virtual substrate

2012 ◽  
Vol 33 (9) ◽  
pp. 094005 ◽  
Author(s):  
Wei Cui ◽  
Zhaohuan Tang ◽  
Kaizhou Tan ◽  
Jing Zhang ◽  
Yi Zhong ◽  
...  
Keyword(s):  
Strained Si ◽  
Low Field ◽  
Field Mobility ◽  
Low Field Mobility

LOW-FIELD MOBILITY MODEL ON PARABOLIC BAND ENERGY OF GRAPHENE NANORIBBON

2011 ◽  
Vol 25 (04) ◽  
pp. 281-290 ◽  
Author(s):  
N. AZIZIAH AMIN ◽  
ZAHARAH JOHARI ◽  
MOHAMMAD TAGHI AHMADI ◽  
RAZALI ISMAIL
Keyword(s):  
Carrier Mobility ◽  
Carrier Transport ◽  
Mobility Model ◽  
Graphene Nanoribbon ◽  
Band Energy ◽  
Low Field ◽  
Field Mobility ◽  
Increasing Temperature ◽  
Degenerate Regime ◽  
Low Field Mobility

The carrier mobility in low-field specifically in parabolic energy region of one-dimensional graphene nanoribbon (GNR) band energy is presented in this work. Low-field mobility model describe the carrier transport and its dependency factors when dealing with degenerate and non-degenerate principals. The result shows that the low-field mobility strongly depends on the temperature in the non-degenerate regime in which it sharply decreases with increasing temperature in the range of 10–250 K but the mobility is less affected by the temperature above 250 K. The effect of varying the GNR width to the mobility is also demonstrated in this work. In addition, it is also shown that the mobility depends on the carrier concentration in degenerate domain in which it increases at higher carrier concentrations.

scholarly journals Low-field Mobility and High-field Velocity of Charge Carriers in InGaAs/InP High-electron-mobility Transistors

2021 ◽  
Author(s):  
Isabel Harrysson Rodrigues ◽  
Andrei Vorobiev
Keyword(s):  
Carrier Transport ◽  
Peak Velocity ◽  
Transverse Field ◽  
High Electron Mobility Transistors ◽  
Low Noise ◽  
High Electron ◽  
Electron Mobility Transistors ◽  
Low Field ◽  
Field Mobility ◽  
Low Field Mobility

<div>Development of transistors for advanced low noise amplifiers requires better understanding of mechanisms governing the charge carrier transport in correlation with the noise performance. In this paper, we report on study of the carrier velocity in InGaAs/InP high-electron-mobility transistors (HEMTs) found via geometrical magnetoresistance in the wide range of the drain fields, up to 2 kV/cm, at cryogenic temperature of 2 K. We observed, for the first time experimentally, the velocity peaks with peak velocity and corresponding field decreasing significantly with the transverse field. The low-field mobility and peak velocity are found to be up to 65000 cm<sup>2</sup>/Vs and 1.2x10<sup>6</sup> cm/s, respectively. Extrapolations to the lower transverse fields show that the peak velocity can be as high as 2.7x10<sup>7</sup> cm/s. The corresponding intrinsic transit frequency can be up to 172 GHz at the gate length of 250 nm. We demonstrated, for the first time, that the low-field mobility and peak velocity reveal opposite dependencies on the transverse field, indicating the difference in carrier transport mechanisms dominating at low- and high-fields. Therefore, the peak velocity is an appropriate parameter for characterization and development of the low noise HEMTs, complementary to the low-field mobility. The results of the research clarify the ways of the further development of the HEMTs for advanced applications.</div>

scholarly journals Low-field Mobility and High-field Velocity of Charge Carriers in InGaAs/InP High-electron-mobility Transistors

2021 ◽  
Author(s):  
Isabel Harrysson Rodrigues ◽  
Andrei Vorobiev
Keyword(s):  
Carrier Transport ◽  
Peak Velocity ◽  
Transverse Field ◽  
High Electron Mobility Transistors ◽  
Low Noise ◽  
High Electron ◽  
Electron Mobility Transistors ◽  
Low Field ◽  
Field Mobility ◽  
Low Field Mobility

<div>Development of transistors for advanced low noise amplifiers requires better understanding of mechanisms governing the charge carrier transport in correlation with the noise performance. In this paper, we report on study of the carrier velocity in InGaAs/InP high-electron-mobility transistors (HEMTs) found via geometrical magnetoresistance in the wide range of the drain fields, up to 2 kV/cm, at cryogenic temperature of 2 K. We observed, for the first time experimentally, the velocity peaks with peak velocity and corresponding field decreasing significantly with the transverse field. The low-field mobility and peak velocity are found to be up to 65000 cm<sup>2</sup>/Vs and 1.2x10<sup>6</sup> cm/s, respectively. Extrapolations to the lower transverse fields show that the peak velocity can be as high as 2.7x10<sup>7</sup> cm/s. The corresponding intrinsic transit frequency can be up to 172 GHz at the gate length of 250 nm. We demonstrated, for the first time, that the low-field mobility and peak velocity reveal opposite dependencies on the transverse field, indicating the difference in carrier transport mechanisms dominating at low- and high-fields. Therefore, the peak velocity is an appropriate parameter for characterization and development of the low noise HEMTs, complementary to the low-field mobility. The results of the research clarify the ways of the further development of the HEMTs for advanced applications.</div>

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