InP high mobility enhancement MISFETs using anodically grown double-layer gate insulator

1982 ◽  
Vol 18 (17) ◽  
pp. 742 ◽  
Author(s):  
T. Sawada ◽  
H. Hasegawa
Keyword(s):  
Double Layer ◽  
High Mobility ◽  
Gate Insulator

Improved Mobility and Bias Stability of Thin Film Transistors Using the Double-Layer a-InGaZnO/a-InGaZnO:N Channel

2016 ◽  
Vol 16 (4) ◽  
pp. 3659-3663
Author(s):  
H Yu ◽  
L Zhang ◽  
X. H Li ◽  
H. Y Xu ◽  
Y. C Liu
Keyword(s):  
Thin Film ◽  
Double Layer ◽  
Thin Film Transistors ◽  
Carrier Transport ◽  
Single Layer ◽  
Channel Structure ◽  
Gate Insulator ◽  
Large Area ◽  
Threshold Voltage Shift ◽  
High Carrier

The amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistors (TFTs) were demonstrated based on a double-layer channel structure, where the channel is composed of an ultrathin nitrogenated a-IGZO (a-IGZO:N) layer and an undoped a-IGZO layer. The double-layer channel device showed higher saturation mobility and lower threshold-voltage shift (5.74 cm2/Vs, 2.6 V) compared to its single-layer counterpart (0.17 cm2/Vs, 7.23 V). The improvement can be attributed to three aspects: (1) improved carrier transport properties of the channel by the a-IGZO:N layer with high carrier mobility and the a-IGZO layer with high carrier concentration, (2) reduced interfacial trap density between the active channel and the gate insulator, and (3) higher surface flatness of the double-layer channel. Our study reveals key insights into double-layer channel, involving selecting more suitable electrical property for back-channel layer and more suitable interface modification for active layer. Meanwhile, room temperature fabrication amorphous TFTs offer certain advantages on better flexibility and higher uniformity over a large area.

A High-Voltage Hydrogenated Amorphous Silicon Thin-Film Transistor for Reflective Active-Matrix Cholesteric LCD

1999 ◽  
Vol 558 ◽  
Author(s):  
J.Y. Nahm ◽  
J.H. Lan ◽  
J. Kanicki
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Double Layer ◽  
High Voltage ◽  
Thin Film Transistor ◽  
Hydrogenated Amorphous Silicon ◽  
Gate Insulator ◽  
Silicon Thin Film ◽  
Active Matrix ◽  
Hydrogenated Amorphous

ABSTRACTA high-voltage hydrogenated amorphous silicon thin film transistor (H-V a-Si:H TFT) with thick double layer gate insulator (∼0.95 μm) has been developed for reflective active-matrix cholesteric liquid crystal displays. The double layer gate insulator consists of 0.85 and 0.10 μm thick benzocyclobutene and hydrogenated amorphous silicon nitride, respectively. This HV a-Si:H TFT operates at the gate-tosource and drain-to-source biases up to 100V without any serious leakage current degradation and device breakdown.

High transconductance InP MISFET'S with double layer gate insulator

Physica B+C ◽  
1985 ◽  
Vol 129 (1-3) ◽  
pp. 399-402 ◽  
Author(s):  
P. Dimitriou ◽  
G. Post ◽  
A. Scavennec ◽  
N. Duhamel ◽  
M. Lorans
Keyword(s):  
Double Layer ◽  
Gate Insulator ◽  
High Transconductance

InGaAs enhancement-mode MISFETs using double-layer gate insulator

1982 ◽  
Vol 18 (24) ◽  
pp. 1034 ◽  
Author(s):  
K. Ishii ◽  
T. Sawada ◽  
H. Ohno ◽  
H. Hasegawa
Keyword(s):  
Double Layer ◽  
Gate Insulator ◽  
Enhancement Mode

A high mobility ambipolar field effect transistor using a 2,6-diphenylbenzo[1,2-b:4,5-b ′]diselenophene/fullerene double layer

2008 ◽  
Vol 145 (3) ◽  
pp. 114-117 ◽  
Author(s):  
Shohei Kinoshita ◽  
Tomo Sakanoue ◽  
Masayuki Yahiro ◽  
Kazuo Takimiya ◽  
Hideaki Ebata ◽  
...  
Keyword(s):  
Double Layer ◽  
Field Effect ◽  
Field Effect Transistor ◽  
High Mobility ◽  
Effect Transistor

Novel Gate Insulator Process by Nitrogen Annealing for Si-Face SiC MOSFET with High-Mobility and High-Reliability

2018 ◽  
Vol 924 ◽  
pp. 457-460 ◽  
Author(s):  
Shunsuke Asaba ◽  
Tatsuo Schimizu ◽  
Yukio Nakabayashi ◽  
Shigeto Fukatsu ◽  
Toshihide Ito ◽  
...  
Keyword(s):  
High Temperature ◽  
Electric Field ◽  
Field Effect ◽  
High Reliability ◽  
High Mobility ◽  
Gate Insulator ◽  
Field Effect Mobility ◽  
High Quality ◽  
Bias Temperature Instability ◽  
Nitrogen Annealing

The gate insulator process for SiC-MOSFET was examined and high-quality interface was realized by employing the pre-annealing process before high-temperature N2 annealing. The pre-annealing evidently activated the interface to introduce nitrogen, and then field-effect mobility exceeded 50 cm2/Vs. The fabricated sample also demonstrated superior bias temperature instability (BTI) and excellent breakdown electric field of 11.7 MV/cm.

High-mobility flexible pentacene-based organic field-effect transistors with PMMA/PVP double gate insulator layers and the investigation on their mechanical flexibility and thermal stability

RSC Advances ◽  
2015 ◽  
Vol 5 (115) ◽  
pp. 95273-95279 ◽  
Author(s):  
Mingdong Yi ◽  
Jialin Guo ◽  
Wen Li ◽  
Linghai Xie ◽  
Quli Fan ◽  
...  
Keyword(s):  
Thermal Stability ◽  
High Performance ◽  
Field Effect Transistors ◽  
High Mobility ◽  
Gate Insulator ◽  
Dielectric Films ◽  
Plastic Substrate ◽  
Double Gate ◽  
Organic Field Effect Transistors ◽  
Insulator Layers

High performance pentacene-based OFETs with excellent mechanical flexibility and high thermal stability were fabricated with PMMA/PVP double dielectric films as double gate insulator layers on a PET plastic substrate. The μ increased from 0.66 to 1.51 cm2 V−1 s−1.

scholarly journals Ge N-Channel MOSFETs with ZrO2 Dielectric Achieving the Improved Mobility

2021 ◽  
Author(s):  
Lulu Chou ◽  
Yan Liu ◽  
Yang Xu ◽  
Yue Peng ◽  
Huan Liu ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Interfacial Layer ◽  
Gate Dielectric ◽  
Gate Dielectrics ◽  
High Mobility ◽  
Gate Insulator ◽  
Equivalent Thickness ◽  
Effective Electron ◽  
Drive Current ◽  
Inversion Charge

Abstract High mobility Ge nMOSFETs with ZrO2 gate dielectric are demonstrated and compared against transistors with Al2O3/ZrO2 , ZrO2, and O3 /ZrO 2 gate dielectrics. The Al2O3/ZrO2 provides for dramatically enhanced-effective electron mobility ( μeff ), boosting transistor drive current. Ge nMOSFETs with the Al2O3 /ZrO2 gate insulator achieve a 50% μeff improvement as compared to the Si universal mobility at an inversion charge density ( Qinv ) of 5 × 10 12 cm -2 . An Al2O3 interfacial layer leads to a boost in μeff but increases capacitance equivalent thickness (CET). Utilizing O3 oxidation of Ge surface, Al2O3 -free Ge nMOSFETs having a CET of 1.1 nm obtains a peak μ eff of 682 cm2 /Vs, which is higher than that of the Si universal mobility at the similar Qinv .

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