High-mobility flexible pentacene-based organic field-effect transistors with PMMA/PVP double gate insulator layers and the investigation on their mechanical flexibility and thermal stability

RSC Advances ◽  
2015 ◽  
Vol 5 (115) ◽  
pp. 95273-95279 ◽  
Author(s):  
Mingdong Yi ◽  
Jialin Guo ◽  
Wen Li ◽  
Linghai Xie ◽  
Quli Fan ◽  
...  
Keyword(s):  
Thermal Stability ◽  
High Performance ◽  
Field Effect Transistors ◽  
High Mobility ◽  
Gate Insulator ◽  
Dielectric Films ◽  
Plastic Substrate ◽  
Double Gate ◽  
Organic Field Effect Transistors ◽  
Insulator Layers

High performance pentacene-based OFETs with excellent mechanical flexibility and high thermal stability were fabricated with PMMA/PVP double dielectric films as double gate insulator layers on a PET plastic substrate. The μ increased from 0.66 to 1.51 cm2 V−1 s−1.

Pyrene fused perylene diimides: synthesis, characterization and applications in organic field-effect transistors and optical limiting with high performance

2015 ◽  
Vol 51 (33) ◽  
pp. 7156-7159 ◽  
Author(s):  
Xuejun Zhan ◽  
Ji Zhang ◽  
Sheng Tang ◽  
Yuxuan Lin ◽  
Min Zhao ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
High Mobility ◽  
Optical Limiting ◽  
Organic Field Effect Transistors ◽  
Perylene Diimides

Pyrene fused PDI derivatives are unprecedentedly designed, with the bilateral one possessing a high mobility up to 1.13 cm2 V−1 s−1.

scholarly journals Graphene Oxide/Polystyrene Bilayer Gate Dielectrics for Low-Voltage Organic Field-Effect Transistors

2018 ◽  
Vol 9 (1) ◽  
pp. 2 ◽  
Author(s):  
Sooji Nam ◽  
Yong Jeong ◽  
Joo Kim ◽  
Hansol Yang ◽  
Jaeyoung Jang
Keyword(s):  
Graphene Oxide ◽  
Field Effect ◽  
High Performance ◽  
Gate Dielectric ◽  
Low Voltage ◽  
Field Effect Transistors ◽  
High Mobility ◽  
Operating Voltage ◽  
Organic Field Effect Transistors ◽  
Gate Leakage

Here, we report on the use of a graphene oxide (GO)/polystyrene (PS) bilayer as a gate dielectric for low-voltage organic field-effect transistors (OFETs). The hydrophilic functional groups of GO cause surface trapping and high gate leakage, which can be overcome by introducing a layer of PS—a hydrophobic polymer—onto the top surface of GO. The GO/PS gate dielectric shows reduced surface roughness and gate leakage while maintaining a high capacitance of 37.8 nF cm−2. The resulting OFETs show high-performance operation with a high mobility of 1.05 cm2 V−1 s−1 within a low operating voltage of −5 V.

High-performance organic field-effect transistors based on single-crystalline microribbons of a two-dimensional fused heteroarene semiconductor

2015 ◽  
Vol 51 (60) ◽  
pp. 11961-11963 ◽  
Author(s):  
Yingfeng Wang ◽  
Sufen Zou ◽  
Jianhua Gao ◽  
Huarong Zhang ◽  
Guoqiao Lai ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
High Mobility ◽  
Two Dimensional ◽  
Organic Field Effect Transistors ◽  
Single Crystalline

A remarkable high mobility of 17.9 cm2V−1s−1was obtained for single-crystalline OFET based on 2D molecule BTBTTBT microribbons.

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