InGaAs enhancement-mode MISFETs using double-layer gate insulator

1982 ◽  
Vol 18 (24) ◽  
pp. 1034 ◽  
Author(s):  
K. Ishii ◽  
T. Sawada ◽  
H. Ohno ◽  
H. Hasegawa
Keyword(s):  
Double Layer ◽  
Gate Insulator ◽  
Enhancement Mode

Improved Mobility and Bias Stability of Thin Film Transistors Using the Double-Layer a-InGaZnO/a-InGaZnO:N Channel

2016 ◽  
Vol 16 (4) ◽  
pp. 3659-3663
Author(s):  
H Yu ◽  
L Zhang ◽  
X. H Li ◽  
H. Y Xu ◽  
Y. C Liu
Keyword(s):  
Thin Film ◽  
Double Layer ◽  
Thin Film Transistors ◽  
Carrier Transport ◽  
Single Layer ◽  
Channel Structure ◽  
Gate Insulator ◽  
Large Area ◽  
Threshold Voltage Shift ◽  
High Carrier

The amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistors (TFTs) were demonstrated based on a double-layer channel structure, where the channel is composed of an ultrathin nitrogenated a-IGZO (a-IGZO:N) layer and an undoped a-IGZO layer. The double-layer channel device showed higher saturation mobility and lower threshold-voltage shift (5.74 cm2/Vs, 2.6 V) compared to its single-layer counterpart (0.17 cm2/Vs, 7.23 V). The improvement can be attributed to three aspects: (1) improved carrier transport properties of the channel by the a-IGZO:N layer with high carrier mobility and the a-IGZO layer with high carrier concentration, (2) reduced interfacial trap density between the active channel and the gate insulator, and (3) higher surface flatness of the double-layer channel. Our study reveals key insights into double-layer channel, involving selecting more suitable electrical property for back-channel layer and more suitable interface modification for active layer. Meanwhile, room temperature fabrication amorphous TFTs offer certain advantages on better flexibility and higher uniformity over a large area.

scholarly journals High Quality Gate Insulator/GaN Interface for Enhancement-Mode Field Effect Transistor

2011 ◽  
Vol 120 (6A) ◽  
pp. A-22-A-24 ◽  
Author(s):  
A. Taube ◽  
R. Kruszka ◽  
M. Borysiewicz ◽  
S. Gierałtowska ◽  
E. Kamińska ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Gate Insulator ◽  
High Quality ◽  
Enhancement Mode ◽  
Mode Field ◽  
Effect Transistor

A High-Voltage Hydrogenated Amorphous Silicon Thin-Film Transistor for Reflective Active-Matrix Cholesteric LCD

1999 ◽  
Vol 558 ◽  
Author(s):  
J.Y. Nahm ◽  
J.H. Lan ◽  
J. Kanicki
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Double Layer ◽  
High Voltage ◽  
Thin Film Transistor ◽  
Hydrogenated Amorphous Silicon ◽  
Gate Insulator ◽  
Silicon Thin Film ◽  
Active Matrix ◽  
Hydrogenated Amorphous

ABSTRACTA high-voltage hydrogenated amorphous silicon thin film transistor (H-V a-Si:H TFT) with thick double layer gate insulator (∼0.95 μm) has been developed for reflective active-matrix cholesteric liquid crystal displays. The double layer gate insulator consists of 0.85 and 0.10 μm thick benzocyclobutene and hydrogenated amorphous silicon nitride, respectively. This HV a-Si:H TFT operates at the gate-tosource and drain-to-source biases up to 100V without any serious leakage current degradation and device breakdown.

Enhancement Mode AlGaN/GaN MIS-HEMTs Using Multilayer HfO2/La2O3 Gate Insulator for High Power Application

2015 ◽  
Author(s):  
Y.X. Huang ◽  
W.C. Shih ◽  
T.W. Lin ◽  
C.H. Wu ◽  
Y.C. Lin ◽  
...  
Keyword(s):  
High Power ◽  
Gate Insulator ◽  
Enhancement Mode ◽  
Power Application

Enhancement mode AlGaN/GaN MIS-HEMTs using optimized Si3N4 gate insulator

2012 ◽  
Author(s):  
W. Choi ◽  
H. Ahn ◽  
N. Jeon ◽  
I. Min ◽  
H. Cha ◽  
...  
Keyword(s):  
Gate Insulator ◽  
Enhancement Mode

High transconductance InP MISFET'S with double layer gate insulator

Physica B+C ◽  
1985 ◽  
Vol 129 (1-3) ◽  
pp. 399-402 ◽  
Author(s):  
P. Dimitriou ◽  
G. Post ◽  
A. Scavennec ◽  
N. Duhamel ◽  
M. Lorans
Keyword(s):  
Double Layer ◽  
Gate Insulator ◽  
High Transconductance
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