scholarly journals Auger recombination rates in ZnMgO from first principles

2011 ◽  
Vol 110 (8) ◽  
pp. 083103 ◽  
Author(s):  
Markus Heinemann ◽  
Christian Heiliger
Keyword(s):  
First Principles ◽  
Auger Recombination ◽  
Recombination Rates

scholarly journals Erratum: “Auger recombination rates in nitrides from first principles” [Appl. Phys. Lett. 94, 191109 (2009)]

2016 ◽  
Vol 108 (25) ◽  
pp. 259901 ◽  
Author(s):  
Kris T. Delaney ◽  
Patrick Rinke ◽  
Chris G. Van de Walle
Keyword(s):  
First Principles ◽  
Auger Recombination ◽  
Recombination Rates

scholarly journals Auger recombination rates in nitrides from first principles

2009 ◽  
Vol 94 (19) ◽  
pp. 191109 ◽  
Author(s):  
Kris T. Delaney ◽  
Patrick Rinke ◽  
Chris G. Van de Walle
Keyword(s):  
First Principles ◽  
Auger Recombination ◽  
Recombination Rates

Measurement of radiative and auger recombination rates in p-type InGaAsP diode lasers

1982 ◽  
Vol 18 (14) ◽  
pp. 595 ◽  
Author(s):  
C.B. Su ◽  
J. Schlafer ◽  
J. Manning ◽  
R. Olshansky
Keyword(s):  
Auger Recombination ◽  
Diode Lasers ◽  
Recombination Rates ◽  
P Type

Pressure-Induced Tunable Electron Transfer and Auger Recombination Rates in CdSe/ZnS Quantum Dot–Anthraquinone Complexes

2019 ◽  
Vol 10 (11) ◽  
pp. 3064-3070 ◽  
Author(s):  
Huifang Zhao ◽  
Hang Yin ◽  
Xiaochun Liu ◽  
Hui Li ◽  
Ying Shi ◽  
...  
Keyword(s):  
Electron Transfer ◽  
Quantum Dot ◽  
Auger Recombination ◽  
Recombination Rates

Auger Recombination in Antimony-Based, Strain-Balanced, Narrow-Band-Gap Superlattics

1997 ◽  
Vol 484 ◽  
Author(s):  
J. T. Olesberg ◽  
Thomas F. Boggess ◽  
S. A. Anson ◽  
D.-J. Jan ◽  
M. E. Flatté ◽  
...  
Keyword(s):  
Auger Recombination ◽  
Growth Direction ◽  
Bandgap Energy ◽  
Recombination Rates ◽  
Electron Hole ◽  
Time Resolved ◽  
All Optical ◽  
Semi Empirical ◽  
The Impact ◽  
Hole Recombination

AbstractTime-resolved all-optical techniques are used to measure the density and temperature dependence of electron-hole recombination in an InAs/GaInSb/InAs/AlGaInAsSb strain-balanced superlattice grown by molecular beam expitaxy on GaSb. This 4 μm bandgap structure, which has been designed for suppressed Auger recombination, is a candidate material for the active region of mid-infrared lasers. While carrier lifetime measurements at room temperature show unambiguous evidence of Auger recombination, the extracted Auger recombination rates are considerably lower than those reported for bulk materials of comparable bandgap energy. We find that the Auger rate saturates at carrier densities comparable to those required for degeneracy of the valence band, illustrating the impact of Fermi statistics on the Auger process. The measured results are compared with theoretical Auger rates computed using a band structure obtained from a semi-empirical 8-band K.p model. We find excellent agreement between theoretical and experimental results when Umklapp processes in the growth direction are included in the calculation. Measured recombination rates from 50 to 300 K are combined with calculated threshold carrier densities to determine a material To value for the superlattice.

A formalism for the indirect Auger effect. I

1976 ◽  
Vol 347 (1651) ◽  
pp. 547-564 ◽  
Keyword(s):  
Room Temperature ◽  
Auger Recombination ◽  
Impact Ionization ◽  
Energy Gap ◽  
Electron Collision ◽  
Recombination Coefficient ◽  
Recombination Rates ◽  
Zinc Blende ◽  
Auger Effect ◽  
Ionization Rates

A general formalism has been developed for the calculation of band-band Auger recombination and impact ionization rates in diamond and zinc blende type structures. The energy gap involved in the transition must be of order 1eV or greater, at room temperature, for direct gaps but is arbi­trary for indirect gaps. A recombination coefficient of 28.1 x 10 -32 cm 6 s -1 for GaP (hole-hole-electron collision) has been obtained in reasonable agreement with experiment. The formalism gives better theoretical values for Ge and Si than so far available. This has tended to reduce the recombination rates expected theoretically.

Picosecond measurement of Auger recombination rates in InGaAs

1984 ◽  
Vol 45 (6) ◽  
pp. 652-654 ◽  
Author(s):  
M. E. Prise ◽  
M. R. Taghizadeh ◽  
S. D. Smith ◽  
B. S. Wherrett
Keyword(s):  
Auger Recombination ◽  
Recombination Rates
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