Characterisation of avalanche photodiodes having nearly-unilateral-carrier multiplication

1974 ◽  
Vol 10 (8) ◽  
pp. 118 ◽  
Author(s):  
K. Mouthaan ◽  
R.M. Snoeren
Keyword(s):  
Avalanche Photodiodes ◽  
Carrier Multiplication

Intrinsic carrier multiplication in layered Bi2O2Se avalanche photodiodes with gain bandwidth product exceeding 1 GHz

Nano Research ◽  
2020 ◽  
Author(s):  
Vinod K. Sangwan ◽  
Joohoon Kang ◽  
David Lam ◽  
J. Tyler Gish ◽  
Spencer A. Wells ◽  
...  
Keyword(s):  
Avalanche Photodiodes ◽  
Gain Bandwidth ◽  
Carrier Multiplication

NOISE CHARACTERISTIC AND QUALITY INVESTIGATION OF ULTRAFAST AVALANCHE PHOTODIODES

2007 ◽  
Vol 07 (03) ◽  
pp. L379-L389
Author(s):  
SANDRA PRALGAUSKAITĖ ◽  
VILIUS PALENSKIS ◽  
JONAS MATUKAS ◽  
AUGUSTINAS VIZBARAS
Keyword(s):  
Avalanche Photodiodes ◽  
Low Frequency ◽  
Noise Characteristic ◽  
Frequency Noise ◽  
Design Development ◽  
Physical Processes ◽  
Device Structure ◽  
Noise Characteristics ◽  
Carrier Multiplication ◽  
Noise Factors

A detailed study of photosensitivity and noise characteristics of ultrafast InGaAsP / InP avalanche photodiodes (APDs) with separate absorption, grading, charge and multiplication regions was carried out. Carrier multiplication and noise factors were evaluated. Noise origin in investigated APDs is 1/f, generation-recombination and shot noises. Different quality samples have been investigated and it is shown that noise characteristics well reflect APD quality problems. It is shown that low-frequency noise and excess shot noise characteristics are very sensitive to the APD quality problems and clear up physical processes in device structure. Noise characteristic analyses can be used for the APD quality problems revealing and optimal design development.

Dual-carrier multiplication high-gain MWIR strain layer superlattice impact ionization engineered avalanche photodiodes

2010 ◽  
Author(s):  
Siddhartha Ghosh ◽  
Koushik Banerjee ◽  
Qing Duan ◽  
Christoph H. Grein ◽  
Elena A. Plis ◽  
...  
Keyword(s):  
Impact Ionization ◽  
Avalanche Photodiodes ◽  
High Gain ◽  
Carrier Multiplication ◽  
Strain Layer ◽  
Strain Layer Superlattice

Amorphous Si/SiC phototransistors and avalanche photodiodes

1991 ◽  
Vol 138 (3) ◽  
pp. 226 ◽  
Author(s):  
C.Y. Chang ◽  
J.W. Hong ◽  
Y.K. Fang
Keyword(s):  
Avalanche Photodiodes ◽  
Amorphous Si

Multiple Quantum Barrier Nano-avalanche Photodiodes - Part III: Time and Frequency Responses

2019 ◽  
Vol 9 (2) ◽  
pp. 192-197
Author(s):  
Somrita Ghosh ◽  
Aritra Acharyya
Keyword(s):  
Optical Pulse ◽  
Pulse Current ◽  
Avalanche Photodiodes ◽  
Simulation Method ◽  
Rectangular Pulse ◽  
Operating Conditions ◽  
Multiple Quantum ◽  
Material System ◽  
Frequency Responses ◽  
The Fourier Transform

Background: The time and frequency responses of Multiple Quantum Barrier (MQB) nano-scale Avalanche Photodiodes (APDs) based on Si~3C-SiC material system have been investigated in this final part. Methods: A very narrow rectangular pulse of pulse-width of 0.4 ps has been used as the input optical pulse having 850 nm wavelength incidents on the p+-side of the MQB APD structures and corresponding current responses have been calculated by using a simulation method developed by the authors. Results: Finally the frequency responses of the devices are obtained via the Fourier transform of the corresponding pulse current responses in time domain. Conclusion: Simulation results show that MQB nano-APDs possess significantly faster time response and wider frequency response as compared to the flat Si nano-APDs under similar operating conditions.

InP/InGaAs buried-structure avalanche photodiodes

1984 ◽  
Vol 20 (4) ◽  
pp. 158 ◽  
Author(s):  
K. Yasuda ◽  
Y. Kishi ◽  
T. Shirai ◽  
T. Mikawa ◽  
S. Yamazaki ◽  
...  
Keyword(s):  
Avalanche Photodiodes
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