Dual-carrier multiplication high-gain MWIR strain layer superlattice impact ionization engineered avalanche photodiodes

2010 ◽  
Author(s):  
Siddhartha Ghosh ◽  
Koushik Banerjee ◽  
Qing Duan ◽  
Christoph H. Grein ◽  
Elena A. Plis ◽  
...  
Keyword(s):  
Impact Ionization ◽  
Avalanche Photodiodes ◽  
High Gain ◽  
Carrier Multiplication ◽  
Strain Layer ◽  
Strain Layer Superlattice

Single Carrier Initiated Low Excess Noise Mid-Wavelength Infrared Avalanche Photodiode using InAs-GaSb Strained Layer Superlattice

2008 ◽  
Vol 1076 ◽  
Author(s):  
Koushik Banerjee ◽  
Shubhrangshu Mallick ◽  
Siddhartha Ghosh ◽  
Elena Plis ◽  
Jean Baptiste Rodriguez ◽  
...  
Keyword(s):  
Indium Arsenide ◽  
Gallium Antimonide ◽  
Avalanche Photodiodes ◽  
Avalanche Photodiode ◽  
Excess Noise ◽  
Single Carrier ◽  
Strained Layer Superlattice ◽  
Strain Layer ◽  
Strain Layer Superlattice ◽  
Noise Factors

ABSTRACTMid-wavelength infrared (MWIR) avalanche photodiodes (APDs) were fabricated using Indium Arsenide- Gallium Antimonide (InAs-GaSb) based strain layer superlattice (SLS) structures. They were engineered specifically to have either electron or hole dominated ionization. The gain characteristics and the excess noise factors were measured for both devices. The electron dominated p+-n−-n APD with a cut-off wavelength of 4.13 μm at 77 K had a maximum multiplication gain of 1800 measured at -20 V while that of the hole dominated n+-p--p structure with a cut-off wavelength of 4.98 μm at 77 K was 21.1 at -5 V at 77 K. Excess noise factors were measured between 1-1.2 up to a gain of 800 and between 1-1.18 up to a gain of 7 for electron and hole dominated APDs respectively.

scholarly journals The effects of nonlocal impact ionization on the speed of avalanche photodiodes

2003 ◽  
Vol 50 (2) ◽  
pp. 347-351 ◽  
Author(s):  
P.J. Hambleton ◽  
B.K. Ng ◽  
S.A. Plimmer ◽  
J.P.R. David ◽  
G.J. Rees
Keyword(s):  
Impact Ionization ◽  
Avalanche Photodiodes

High Gain and High Sensitive Blue-Ultraviolet Avalanche Photodiodes (APDs) of ZnSSe n+-i-p Structure Molecular Beam Epitaxy (MBE) Grown on p-type GaAs Substrates

2005 ◽  
Vol 44 (No. 17) ◽  
pp. L508-L510 ◽  
Author(s):  
Tomoki Abe ◽  
Koshi Ando ◽  
Katsushi Ikumi ◽  
Hiroyasu Maeta ◽  
Junji Naruse ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Avalanche Photodiodes ◽  
High Gain ◽  
Gaas Substrates ◽  
P Type

scholarly journals Low dark current and high gain-bandwidth product of avalanche photodiodes: optimization and realization

2020 ◽  
Vol 28 (11) ◽  
pp. 16211
Author(s):  
Hui Wang ◽  
Xiaohong Yang ◽  
Rui Wang ◽  
Tingting He ◽  
Kaibao Liu
Keyword(s):  
Dark Current ◽  
Avalanche Photodiodes ◽  
High Gain ◽  
Gain Bandwidth

Improved dual-carrier high gain impact ionization engineered avalanche photodiode

2012 ◽  
Author(s):  
Jun Huang ◽  
Koushik Banerjee ◽  
Siddhartha Ghosh ◽  
Majeed M. Hayat
Keyword(s):  
Impact Ionization ◽  
Avalanche Photodiode ◽  
High Gain
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