Effect of dead space on gain and noise of double-carrier-multiplication avalanche photodiodes

1992 ◽  
Vol 39 (3) ◽  
pp. 546-552 ◽  
Author(s):  
M.M. Hayat ◽  
B.E.A. Saleh ◽  
M.C. Teich
Nano Research ◽  
2020 ◽  
Author(s):  
Vinod K. Sangwan ◽  
Joohoon Kang ◽  
David Lam ◽  
J. Tyler Gish ◽  
Spencer A. Wells ◽  
...  

2007 ◽  
Vol 07 (03) ◽  
pp. L379-L389
Author(s):  
SANDRA PRALGAUSKAITĖ ◽  
VILIUS PALENSKIS ◽  
JONAS MATUKAS ◽  
AUGUSTINAS VIZBARAS

A detailed study of photosensitivity and noise characteristics of ultrafast InGaAsP / InP avalanche photodiodes (APDs) with separate absorption, grading, charge and multiplication regions was carried out. Carrier multiplication and noise factors were evaluated. Noise origin in investigated APDs is 1/f, generation-recombination and shot noises. Different quality samples have been investigated and it is shown that noise characteristics well reflect APD quality problems. It is shown that low-frequency noise and excess shot noise characteristics are very sensitive to the APD quality problems and clear up physical processes in device structure. Noise characteristic analyses can be used for the APD quality problems revealing and optimal design development.


2016 ◽  
Vol 24 (19) ◽  
pp. 21597 ◽  
Author(s):  
Erum Jamil ◽  
Jeng S. Cheong ◽  
J. P. R. David ◽  
Majeed M. Hayat

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