Determination of the constants of the capacitance/voltage law of a varactor diode

1968 ◽  
Vol 4 (13) ◽  
pp. 274 ◽  
Author(s):  
R.B. Smith ◽  
B. Bramer ◽  
D.G. Croft
Keyword(s):  
Varactor Diode ◽  
Capacitance Voltage

Determination of the conduction‐band discontinuities of In0.5Ga0.5P/In1−xGaxAs1−yPy by capacitance–voltage analysis

1995 ◽  
Vol 66 (14) ◽  
pp. 1785-1787 ◽  
Author(s):  
Yong‐Hoon Cho ◽  
Kwan‐Shik Kim ◽  
Sang‐Wan Ryu ◽  
Sang‐Ku Kim ◽  
Byung‐Doo Choe ◽  
...  
Keyword(s):  
Conduction Band ◽  
Capacitance Voltage

Determination of the band offset and the characteristic interdiffusion length in quantum-well lasers using a capacitance–voltage technique

2000 ◽  
Vol 77 (6) ◽  
pp. 776-778 ◽  
Author(s):  
J. Arias ◽  
I. Esquivias ◽  
E. C. Larkins ◽  
S. Bürkner ◽  
S. Weisser ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Well Lasers ◽  
Band Offset ◽  
Capacitance Voltage

Extended Analysis of Capacitance–Voltage Curves for the Determination of Bulk Dopant Concentrations of Textured Silicon Solar Cells

2011 ◽  
Vol 58 (11) ◽  
pp. 3759-3770 ◽  
Author(s):  
Matthias Schütze ◽  
David Hinken ◽  
Ashley Milsted ◽  
Max B. Koentopp ◽  
Karsten Bothe
Keyword(s):  
Solar Cells ◽  
Silicon Solar Cells ◽  
Capacitance Voltage ◽  
Extended Analysis

scholarly journals Determination of free hole concentration in ferromagnetic Ga1−xMnxAs using electrochemical capacitance–voltage profiling

2002 ◽  
Vol 81 (5) ◽  
pp. 844-846 ◽  
Author(s):  
K. M. Yu ◽  
W. Walukiewicz ◽  
T. Wojtowicz ◽  
W. L. Lim ◽  
X. Liu ◽  
...  
Keyword(s):  
Hole Concentration ◽  
Electrochemical Capacitance ◽  
Free Hole ◽  
Capacitance Voltage

Capacitance-voltage characteristics of MIS-structures on the basis of graded-band MBE Hg1−xCdxTe at passivation by epitaxially grown in situ CdTe

2010 ◽  
Vol 18 (3) ◽  
Author(s):  
A.V. Voitsekhovskii ◽  
S.N. Nesmelov ◽  
S.M. Dzyadukh ◽  
V.S. Varavin ◽  
S.A. Dvoretskii ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Molecular Beam ◽  
Surface States ◽  
Electrical Strength ◽  
Mobile Charge ◽  
Protective Layers ◽  
Capacitance Voltage ◽  
Mis Structures

AbstractThe electrical properties of the interface between Hg1−xCdxTe (x = 0.22 and x = 0.32–0.36) and CdTe prepared in situ molecular beam epitaxy were estimated at 77 K. The methods of determination of main parameters of interface semiconductor/insulator and insulator from capacitance-voltage characteristics of MIS-structures based on graded-band Hg1−xCdxTe have been developed. The fixed charge states density, fast surface states density, and density of mobile charge are obtained from capacitance-voltage measurements. For improvement in stable and electrical strength of insulator coating for several samples over CdTe additional protective layers SiO2-Si3N4 are formed for x = 0.22 and ZnTe for x = 0.32–0.36.

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