scholarly journals Determination of free hole concentration in ferromagnetic Ga1−xMnxAs using electrochemical capacitance–voltage profiling

2002 ◽  
Vol 81 (5) ◽  
pp. 844-846 ◽  
Author(s):  
K. M. Yu ◽  
W. Walukiewicz ◽  
T. Wojtowicz ◽  
W. L. Lim ◽  
X. Liu ◽  
...  
Keyword(s):  
Hole Concentration ◽  
Electrochemical Capacitance ◽  
Free Hole ◽  
Capacitance Voltage

Determination of the conduction‐band discontinuities of In0.5Ga0.5P/In1−xGaxAs1−yPy by capacitance–voltage analysis

1995 ◽  
Vol 66 (14) ◽  
pp. 1785-1787 ◽  
Author(s):  
Yong‐Hoon Cho ◽  
Kwan‐Shik Kim ◽  
Sang‐Wan Ryu ◽  
Sang‐Ku Kim ◽  
Byung‐Doo Choe ◽  
...  
Keyword(s):  
Conduction Band ◽  
Capacitance Voltage

scholarly journals The Effects of Amorphous Layer Regrowth on Carbon Activation in GaAs and InP

1993 ◽  
Vol 316 ◽  
Author(s):  
A.J. Moll ◽  
J.W. Ager ◽  
K.M. Yu ◽  
W. Walukiewicz ◽  
E.E. Haller
Keyword(s):  
Hole Concentration ◽  
Amorphous Layer ◽  
Free Hole ◽  
Initial Results

ABSTRACTThe effect of the Ga dose on the activation of implanted carbon in GaAs is determined. The free hole concentration is found to depend on the depth of the amorphous layer created by the Ga co-implant. Initial results on C implantation in InP indicate the behavior of C is very different in InP when compared to GaAs. The role of precipitation in reducing the activation of C in both GaAs and InP is discussed.

In defense of the bromine method for the determination of hole concentration in superconducting thallium cuprates

1992 ◽  
Vol 96 (2) ◽  
pp. 468-469 ◽  
Author(s):  
J. Gopalakrishnan ◽  
R. Vijayaraghavan ◽  
R. Nagarajan ◽  
C. Shivakumara
Keyword(s):  
Hole Concentration ◽  
Thallium Cuprates

Raman spectroscopic determination of hole concentration inundopedGaAsBi

2018 ◽  
Vol 34 (1) ◽  
pp. 015008 ◽  
Author(s):  
Sixin Zhu ◽  
Weiyang Qiu ◽  
Han Wang ◽  
Tie Lin ◽  
Pingping Chen ◽  
...  
Keyword(s):  
Hole Concentration ◽  
Spectroscopic Determination ◽  
Raman Spectroscopic

Diagnostics of semiconductor structures by electrochemical capacitance-voltage profiling technique

2021 ◽  
Vol 87 (1) ◽  
pp. 35-44
Author(s):  
G. E. Yakovlev ◽  
D. S. Frolov ◽  
V. I. Zubkov
Keyword(s):  
Quantum Wells ◽  
Concentration Distribution ◽  
Semiconductor Devices ◽  
Multiple Quantum ◽  
Carrier Distribution ◽  
Electrochemical Capacitance ◽  
Informative Feedback ◽  
Semiconductor Structures ◽  
Capacitance Voltage ◽  
Gan Heterostructure

The properties of interfaces in the heterostructures which frequently govern their operation are of particular importance for the devices containing heterostructures as active elements. Any further improving of the characteristics of semiconductor devices is impossible without a detail analysis of the processes occurring at the interfaces of heterojunctions. At the same time, the results largely depend on the purity of the starting materials and the technology of layer manufacturing. Moreover, the requirements to the composition and distribution of the impurity steadily get stringent. Therefore, the requirements regarding the methods of the impurity control and carrier distribution also become tougher both in the stage of laboratory development of the structure and in various stages of manufacturing of semiconductor devices. Electrochemical capacitance-voltage profiling is distinguished among the methods of electrical diagnostics of semiconductors by the absence of special preparation of the structures and deposition of the contacts to perform measurements, thus providing for gaining information not only about the impurity distribution but also about the distribution of free carriers. The goal of this work is to perform precise measurements of the profiles of free carrier distribution in semiconductor structures of different types, and demonstrate the measuring capabilities of a modern technique for concentration distribution diagnostics, i.e., electrochemical capacitance-voltage profiling. The method allows verification of the layer thickness in semiconductor heterostructures and provide a useful and informative feedback to technologists. To increase the resolution of the method and broad up the range of available test frequencies, a standard electrochemical profiler has been modified. Mapping data for GaAs substrate structure, the profiles of the concentration distribution of the majority charge carriers in SiC structures, GaAs structure with a p – n junction, pHEMT heterostructure, GaN heterostructure with multiple quantum wells, and in a silicon-based solar cell heterostructure are presented. The obtained results can be used to analyze the physical properties and phenomena in semiconductor devices with quantum-sized layers, as well as to improve and refine the parameters of existing electronic devices.

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