Extended Analysis of Capacitance–Voltage Curves for the Determination of Bulk Dopant Concentrations of Textured Silicon Solar Cells

2011 ◽  
Vol 58 (11) ◽  
pp. 3759-3770 ◽  
Author(s):  
Matthias Schütze ◽  
David Hinken ◽  
Ashley Milsted ◽  
Max B. Koentopp ◽  
Karsten Bothe
Keyword(s):  
Solar Cells ◽  
Silicon Solar Cells ◽  
Capacitance Voltage ◽  
Extended Analysis

scholarly journals Surface Passivation of Boron Emitters on n-Type Silicon Solar Cells

2019 ◽  
Vol 11 (14) ◽  
pp. 3784
Author(s):  
Ji Yeon Hyun ◽  
Soohyun Bae ◽  
Yoon Chung Nam ◽  
Dongkyun Kang ◽  
Sang-Won Lee ◽  
...  
Keyword(s):  
Solar Cells ◽  
Surface Passivation ◽  
Atom Probe ◽  
Silicon Solar Cells ◽  
Capacitance Voltage ◽  
Passivation Layers ◽  
Chemical Passivation ◽  
Electron Energy Loss ◽  
Hydrogenation Effect ◽  
Antireflective Properties

Al2O3/SiNx stack passivation layers are among the most popular layers used for commercial silicon solar cells. In particular, aluminum oxide has a high negative charge, while the SiNx film is known to supply hydrogen as well as impart antireflective properties. Although there are many experimental results that show that the passivation characteristics are lowered by using the stack passivation layer, the cause of the passivation is not yet understood. In this study, we investigated the passivation characteristics of Al2O3/SiNx stack layers. To identify the hydrogenation effect, we analyzed the hydrogen migration with atom probe tomography by comparing the pre-annealing and post-annealing treatments. For chemical passivation, capacitance-voltage measurements were used to confirm the negative fixed charge density due to heat treatment. Moreover, the field-effect passivation was understood by confirming changes in the Al2O3 structure using electron energy-loss spectroscopy.

Determination of the Lifetime Influence Upon the Conversion Efficiency of the Photovoltaic Silicon Solar Cells

2017 ◽  
Vol 17 (2) ◽  
pp. 20-24
Author(s):  
G. Preduşcă ◽  
C. Fluieraru
Keyword(s):  
Solar Cells ◽  
Energy Level ◽  
Conversion Efficiency ◽  
Light Absorption ◽  
Doping Concentration ◽  
Life Time ◽  
Silicon Solar Cells ◽  
Recombination Processes

AbstractIf the electrons and holes in excess are created in a semiconductor, either by means of light absorption, or using other methods, the thermic balance is disturbed, therefore these electrons and holes should be nullified after the source had been stopped. This process is named recombination. There are three main recombination types: radioactive, Auger and deep energy level recombination. All three are based on the doping concentration to a certain point. The life time is determined using the three recombination processes in semiconductor.

Determination of the effective diffusion length of silicon solar cells from photoluminescence

2009 ◽  
Vol 105 (10) ◽  
pp. 104516 ◽  
Author(s):  
David Hinken ◽  
Karsten Bothe ◽  
Klaus Ramspeck ◽  
Sandra Herlufsen ◽  
Rolf Brendel
Keyword(s):  
Solar Cells ◽  
Diffusion Length ◽  
Effective Diffusion ◽  
Silicon Solar Cells

scholarly journals Direct Determination of Total Hemispherical Emittance of Perovskite and Silicon Solar Cells

2020 ◽  
Vol 1 (1) ◽  
pp. 100008
Author(s):  
Laura Granados ◽  
Noboru Takamure ◽  
Jueming Bing ◽  
Shujuan Huang ◽  
Hamid Merhvarz ◽  
...  
Keyword(s):  
Solar Cells ◽  
Direct Determination ◽  
Silicon Solar Cells ◽  
Total Hemispherical Emittance
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