Flexible Short-Wave Infrared Image Sensors Enabled by High-Performance Polymeric Photodetectors

2020 ◽  
Vol 53 (23) ◽  
pp. 10636-10643
Author(s):  
Lei Lv ◽  
Wei Dang ◽  
Xiaoxi Wu ◽  
Hao Chen ◽  
Tao Wang ◽  
...  
Keyword(s):  
High Performance ◽  
Infrared Image ◽  
Short Wave ◽  
Image Sensors ◽  
Short Wave Infrared ◽  
Infrared Image Sensors

High-performance graphene/InSb heterojunction photodetectors for high-resolution mid-infrared image sensors

2020 ◽  
Vol 117 (17) ◽  
pp. 173102
Author(s):  
Masaaki Shimatani ◽  
Shoichiro Fukushima ◽  
Satoshi Okuda ◽  
Shinpei Ogawa
Keyword(s):  
High Resolution ◽  
High Performance ◽  
Infrared Image ◽  
Image Sensors ◽  
Mid Infrared ◽  
Infrared Image Sensors

Bolometric properties of reactively sputtered TiO2−xfilms for thermal infrared image sensors

2015 ◽  
Vol 48 (35) ◽  
pp. 355104 ◽  
Author(s):  
Y Ashok Kumar Reddy ◽  
In-Ku Kang ◽  
Young Bong Shin ◽  
Hee Chul Lee
Keyword(s):  
Infrared Image ◽  
Thermal Infrared ◽  
Image Sensors ◽  
Infrared Image Sensors

Photo-Related Stress Effects in a-SiGe:H Thin Film Transistors for Infrared Image Sensors

2013 ◽  
Vol 9 (1) ◽  
pp. 30-36 ◽  
Author(s):  
Sang Youn Han ◽  
Kyung Sook Jeon ◽  
Junho Song ◽  
Ho Sik Jeon ◽  
Byung Seong Bae
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Infrared Image ◽  
Image Sensors ◽  
Stress Effects ◽  
Related Stress ◽  
Infrared Image Sensors

Foveating infrared image sensors

2007 ◽  
Author(s):  
Paul L. McCarley ◽  
Mark A. Massie ◽  
Jon P. Curzan
Keyword(s):  
Infrared Image ◽  
Image Sensors ◽  
Infrared Image Sensors

scholarly journals Silicon Schottky-Barrier Infrared Image Sensors

1986 ◽  
Vol 14 (2) ◽  
pp. 98-107
Author(s):  
Masafumi KIMATA ◽  
Masahiko DENDA ◽  
Natsuro TSUBOUCHI
Keyword(s):  
Schottky Barrier ◽  
Infrared Image ◽  
Image Sensors ◽  
Infrared Image Sensors

scholarly journals Ge-on-Si single-photon avalanche diode detectors for short-wave infrared wavelengths

2021 ◽  
Author(s):  
Fiona Thorburn ◽  
Xin Yi ◽  
Zoe Greener ◽  
Jaroslaw Kirkoda ◽  
Ross Millar ◽  
...  
Keyword(s):  
High Performance ◽  
Single Photon ◽  
Wavelength Region ◽  
Short Wave ◽  
Single Photon Detection ◽  
Single Photon Detector ◽  
Photon Detectors ◽  
Long Distance ◽  
Single Photon Detectors ◽  
Short Wave Infrared

Abstract Germanium-on-Silicon (Ge-on-Si) based single-photon avalanche diodes (SPADs) have recently emerged as a promising detector candidate for ultra-sensitive and picosecond resolution timing measurement of short-wave infrared (SWIR) photons. Many applications benefit from operating in the SWIR spectral range, such as long distance Light Detection and Ranging (LiDAR), however, there are few single-photon detectors exhibiting the high-performance levels obtained by all-silicon SPADs commonly used for single-photon detection at wavelengths < 1 μm. This paper first details the advantages of operating at SWIR wavelengths, the current technologies, and associated issues, and describes the potential of Ge-on-Si SPADs as a single-photon detector technology for this wavelength region. The working principles, fabrication and characterisation processes of such devices are subsequently detailed. We review the research in these single-photon detectors and detail the state-of-the-art performance. Finally, the challenges and future opportunities offered by Ge-on-Si SPAD detectors are discussed.

A high-performance short-wave infrared phototransistor based on a 2D tellurium/MoS2 van der Waals heterojunction

2021 ◽  
Vol 9 (38) ◽  
pp. 13123-13131
Author(s):  
Jinrong Yao ◽  
Fangfang Chen ◽  
Juanjuan Li ◽  
Junli Du ◽  
Di Wu ◽  
...  
Keyword(s):  
High Performance ◽  
Response Spectrum ◽  
Van Der Waals ◽  
Short Wave ◽  
Swir Band ◽  
Vdw Heterostructure ◽  
Short Wave Infrared

A gate-tunable Te/MoS2 vdW heterostructure is fabricated, exhibiting favourable photodetection properties with a response spectrum covering the whole SWIR band.

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