Constructing anion vacancy-rich MoSSe/G van der Waals heterostructures for high-performance Mg–Li hybrid-ion batteries

Author(s):  
Xianbo Yu ◽  
Guangyu Zhao ◽  
Canlong Wu ◽  
Huihuang Huang ◽  
Chao Liu ◽  
...  

Anion vacancies riched MoSSe and graphene van der Waals heterostructures can reduce the ion diffusion barriers and increase the adsorption energy, thereby greatly enhancing the ion diffusion rate and suppressing the rapid voltage drop in discharge.

Author(s):  
Bojun Peng ◽  
Liang Xu ◽  
Jian Zeng ◽  
Xiaopeng Qi ◽  
Youwen Yang ◽  
...  

The development of non-precious, high-performance and environmentally friendly wide band gap semiconductor composite photocatalysts is highly desirable. Here we report two-dimensional (2D) GaN/SiC-based multilayer van der Waals heterostructures for hydrogen...


2016 ◽  
Vol 4 (47) ◽  
pp. 18416-18425 ◽  
Author(s):  
Fu-Da Yu ◽  
Lan-Fang Que ◽  
Zhen-Bo Wang ◽  
Yin Zhang ◽  
Yuan Xue ◽  
...  

We report an effective approach to fabricate layered-spinel capped nanotube assembled 3D Li-rich hierarchitectures as a cathode material for Li-ion batteries. The resultant material exhibits a reduced first-cycle irreversible capacity loss, rapid Li-ion diffusion rate and excellent cycle stability.


Nanomaterials ◽  
2021 ◽  
Vol 11 (12) ◽  
pp. 3338
Author(s):  
Jiali Wang ◽  
Xiuwen Zhao ◽  
Guichao Hu ◽  
Junfeng Ren ◽  
Xiaobo Yuan

van der Waals heterostructures (vdWHs) can exhibit novel physical properties and a wide range of applications compared with monolayer two-dimensional (2D) materials. In this work, we investigate the electronic and optical properties of MoSTe/MoGe2N4 vdWH under two different configurations using the VASP software package based on density functional theory. The results show that Te4-MoSTe/MoGe2N4 vdWH is a semimetal, while S4-MoSTe/MoGe2N4 vdWH is a direct band gap semiconductor. Compared with the two monolayers, the absorption coefficient of MoSTe/MoGe2N4 vdWH increases significantly. In addition, the electronic structure and the absorption coefficient can be manipulated by applying biaxial strains and changing interlayer distances. These studies show that MoSTe/MoGe2N4 vdWH is an excellent candidate for high-performance optoelectronic devices.


2019 ◽  
Vol 114 (10) ◽  
pp. 103501 ◽  
Author(s):  
Ningning Li ◽  
Yao Wen ◽  
Ruiqing Cheng ◽  
Lei Yin ◽  
Feng Wang ◽  
...  

2021 ◽  
Vol 2021 ◽  
pp. 1-7
Author(s):  
Gang Xu ◽  
Yelu He

In recent years, much interest in the study of Van der Waals heterostructures (vdWhs) has arisen. This has led to a significant amount of fundamental research being produced, from which novel optoelectronic applications have been established. By using first principles, we analyze the electronic structure of silicane/SnSe2 vdWhs in the response to an externally applied electric field and a normal strain. The results show that the silicane/SnSe2 vdWh acts as an indirect semiconductor when it is subjected to an applied electric field between −1 and 0.1 V/Å and becomes a metal in the 0.2 to 1 V/Å range. Significantly, the electronic band alignments of the silicane/SnSe2 vdWhs are modified from a type-II to a type-I when a field of −0.7 V/Å is applied. Furthermore, it is determined that the silicane/SnSe2 vdWhs appears to have a semiconductor-metal phase transition at a strain of −5%. Our results indicate that the silicane/SnSe2 vdWhs have the potential for applications in novel high-performance optoelectronic devices.


2017 ◽  
Vol 9 (14) ◽  
pp. 12728-12733 ◽  
Author(s):  
Qingfeng Liu ◽  
Brent Cook ◽  
Maogang Gong ◽  
Youpin Gong ◽  
Dan Ewing ◽  
...  

2019 ◽  
Vol 7 (36) ◽  
pp. 11056-11067 ◽  
Author(s):  
Huijuan Geng ◽  
Di Yuan ◽  
Zhi Yang ◽  
Zhenjie Tang ◽  
Xiwei Zhang ◽  
...  

We present a comprehensive review on the recent progress of graphene vdW heterostructure photodetectors and give further perspectives in this emerging field.


Nanoscale ◽  
2020 ◽  
Vol 12 (16) ◽  
pp. 8858-8866
Author(s):  
Qiwang Jiang ◽  
Jie Wang ◽  
Yan Jiang ◽  
Long Li ◽  
Xingzhong Cao ◽  
...  

Selenium vacancy-rich and carbon-free VSe2 nanosheets achieve excellent lithium storage performance due to significantly enhanced lithium-ion diffusion rate and electrochemical active sites induced by the Se vacancies.


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