Gallium oxide techno-economic analysis for the wide bandgap semiconductor market

2020 ◽  
Author(s):  
Samantha Reese ◽  
Andriy Zakutayev
Keyword(s):  
Economic Analysis ◽  
Gallium Oxide ◽  
Wide Bandgap ◽  
Wide Bandgap Semiconductor

scholarly journals Comparative Study of Growth Morphologies of Ga2O3 Nanowires on Different Substrates

Nanomaterials ◽  
2020 ◽  
Vol 10 (10) ◽  
pp. 1920
Author(s):  
Badriyah Alhalaili ◽  
Ruxandra Vidu ◽  
Howard Mao ◽  
M. Saif Islam
Keyword(s):  
Gallium Oxide ◽  
Catalyst Layer ◽  
Wide Bandgap ◽  
Nanowire Growth ◽  
Si Substrate ◽  
Wide Bandgap Semiconductor ◽  
Si Substrates ◽  
Silver Catalysts ◽  
Elemental Characterization

Gallium oxide (Ga2O3) is a new wide bandgap semiconductor with remarkable properties that offers strong potential for applications in power electronics, optoelectronics, and devices for extreme conditions. In this work, we explore the morphology of Ga2O3 nanostructures on different substrates and temperatures. We used silver catalysts to enhance the growth of Ga2O3 nanowires on substrates such as p-Si substrate doped with boron, 250 nm SiO2 on n-Si, 250 nm Si3N4 on p-Si, quartz, and n-Si substrates by using a thermal oxidation technique at high temperatures (~1000 °C) in the presence of liquid silver paste that served as a catalyst layer. We present the results of the morphological, structural, and elemental characterization of the Ga2O3 nanostructures. This work offers in-depth explanation of the dense, thin, and long Ga2O3 nanowire growth directly on the surfaces of various types of substrates using silver catalysts.

scholarly journals Self-catalyst β-Ga2O3 semiconductor lateral nanowire networks synthesis on the insulating substrate for deep ultraviolet photodetectors

RSC Advances ◽  
2021 ◽  
Vol 11 (45) ◽  
pp. 28326-28331
Author(s):  
Yutong Wu ◽  
Shuanglong Feng ◽  
Miaomiao Zhang ◽  
Shuai Kang ◽  
Kun Zhang ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Gallium Oxide ◽  
Wide Bandgap ◽  
Radiation Wavelength ◽  
Wide Bandgap Semiconductor ◽  
Ideal Candidate ◽  
Deep Ultraviolet ◽  
Nanowire Networks ◽  
Ultraviolet Photodetectors ◽  
Excellent Chemical

Monoclinic gallium oxide (β-Ga2O3) is a super-wide bandgap semiconductor with excellent chemical and thermal stability, which is an ideal candidate for detecting deep ultraviolet (DUV) radiation (wavelength from 200 nm to 280 nm).

Interface-engineered barium magnetoplumbite–wide-bandgap semiconductor integration enabling 5G system-on-wafer solutions for full-duplexing phased arrays

2021 ◽  
Vol 119 (5) ◽  
pp. 051906
Author(s):  
C. Yu ◽  
P. Andalib ◽  
A. Sokolov ◽  
O. Fitchorova ◽  
W. Liang ◽  
...  
Keyword(s):  
Phased Arrays ◽  
Wide Bandgap ◽  
Wide Bandgap Semiconductor

Self‐Confined Growth of Ultrathin 2D Nonlayered Wide‐Bandgap Semiconductor CuBr Flakes

2019 ◽  
Vol 31 (36) ◽  
pp. 1903580 ◽  
Author(s):  
Chuanhui Gong ◽  
Junwei Chu ◽  
Chujun Yin ◽  
Chaoyi Yan ◽  
Xiaozong Hu ◽  
...  
Keyword(s):  
Wide Bandgap ◽  
Wide Bandgap Semiconductor ◽  
Confined Growth

Ferromagnetism of wide-bandgap semiconductor surfaces: Mg-doped AlN

2015 ◽  
Vol 54 (11) ◽  
pp. 110302 ◽  
Author(s):  
Sandhya Chintalapati ◽  
Yongqing Cai ◽  
Ming Yang ◽  
Lei Shen ◽  
Yuan Ping Feng
Keyword(s):  
Wide Bandgap ◽  
Semiconductor Surfaces ◽  
Wide Bandgap Semiconductor ◽  
Mg Doped

Study of the Hole Transport Processes in Solution-Processed Layers of the Wide Bandgap Semiconductor Copper(I) Thiocyanate (CuSCN)

2015 ◽  
Vol 25 (43) ◽  
pp. 6802-6813 ◽  
Author(s):  
Pichaya Pattanasattayavong ◽  
Alexander D. Mottram ◽  
Feng Yan ◽  
Thomas D. Anthopoulos
Keyword(s):  
Wide Bandgap ◽  
Hole Transport ◽  
Transport Processes ◽  
Solution Processed ◽  
Wide Bandgap Semiconductor

Surface Characterization of Silicon Carbide Following Shallow Implantation of Palladium Ions

2005 ◽  
Vol 900 ◽  
Author(s):  
Claudiu I. Muntele ◽  
Sergey Sarkisov ◽  
Iulia Muntele ◽  
Daryush Ila
Keyword(s):  
Silicon Carbide ◽  
Surface Characterization ◽  
Wide Bandgap ◽  
Electrical Contacts ◽  
Temperature Dependent ◽  
Wide Bandgap Semiconductor ◽  
Hydrogen Sensing ◽  
Fast Switching ◽  
Sensing Applications

ABSTRACTSilicon carbide is a promising wide-bandgap semiconductor intended for use in fabrication of high temperature, high power, and fast switching microelectronics components running without cooling. For hydrogen sensing applications, silicon carbide is generally used in conjunction with either palladium or platinum, both of them being good catalysts for hydrogen. Here we are reporting on the temperature-dependent surface morphology and depth profile modifications of Au, Ti, and W electrical contacts deposited on silicon carbide substrates implanted with 20 keV Pd ions.

Epitaxial growth of β-Ga2O3 (-201) thin film on fourfold symmetry CeO2 (001) substrate for heterogeneous integrations

2021 ◽  
Author(s):  
Xiao Tang ◽  
Kuanghui Li ◽  
Che-Hao Liao ◽  
Dongxing Zheng ◽  
chen Liu ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Epitaxial Growth ◽  
Gas Sensors ◽  
High Power ◽  
Wide Bandgap ◽  
Semiconductor Material ◽  
Uv Detectors ◽  
Wide Bandgap Semiconductor ◽  
Fourfold Symmetry

β-Ga2O3 is a wide bandgap semiconductor material promising for many fields such as gas sensors, UV detectors, and high power electronics. Until now, most epitaxial β-Ga2O3 thin films could only...

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