Tailoring the structural and electronic properties of an SnSe2/MoS2 van der Waals heterostructure with an electric field and the insertion of a graphene sheet

2019 ◽  
Vol 21 (39) ◽  
pp. 22140-22148 ◽  
Author(s):  
Tuan V. Vu ◽  
Nguyen V. Hieu ◽  
Le T. P. Thao ◽  
Nguyen N. Hieu ◽  
Huynh V. Phuc ◽  
...  

van der Waals heterostructures by stacking different two-dimensional materials are being considered as potential materials for nanoelectronic and optoelectronic devices because they can show the most potential advantages of individual 2D materials.

2018 ◽  
Vol 20 (44) ◽  
pp. 27856-27864 ◽  
Author(s):  
P. T. T. Le ◽  
Nguyen N. Hieu ◽  
Le M. Bui ◽  
Huynh V. Phuc ◽  
Bui D. Hoi ◽  
...  

Combining van der Waals heterostructures by stacking different two-dimensional materials on top of each other layer-by-layer can enhance their desired properties and greatly extend the applications of the parent materials.


2015 ◽  
Vol 17 (18) ◽  
pp. 12194-12198 ◽  
Author(s):  
Run-wu Zhang ◽  
Chang-wen Zhang ◽  
Wei-xiao Ji ◽  
Feng Li ◽  
Miao-juan Ren ◽  
...  

We investigate the structural and electronic properties of germanene/germanane heterostructures. The band gap in these heterostructures can be effectively modulated by the external electric field and strain. These results provide a route to design high-performance FETs operating at room temperature in nanodevices.


2019 ◽  
Vol 21 (3) ◽  
pp. 1521-1527 ◽  
Author(s):  
Qian Zhang ◽  
Xueping Li ◽  
Tianxing Wang ◽  
Zhenduo Geng ◽  
Congxin Xia

Constructing a van der Waals heterostructure (vdWH) by stacking different two-dimensional (2D) materials has been considered to be an effective strategy to obtain the desired properties.


2021 ◽  
Author(s):  
Hui Yao ◽  
Chao Zhang ◽  
Qiang Wang ◽  
Jianwei Li ◽  
Yunjin Yu ◽  
...  

The Van der Waals heterostructures (vdWHs) based on two-dimensional (2D) materials have been extensively recognized promising candidates for fabricating multi-functional novel devices. In this work, we investigated structural and electronic...


2020 ◽  
Vol 22 (15) ◽  
pp. 7952-7961 ◽  
Author(s):  
Tuan V. Vu ◽  
Tan Phat Dao ◽  
M. Idrees ◽  
Huynh V. Phuc ◽  
Nguyen N. Hieu ◽  
...  

Constructing vertical heterostructures by placing graphene (Gr) on two-dimensional materials has recently emerged as an effective way to enhance the performance of nanoelectronic and optoelectronic devices.


RSC Advances ◽  
2020 ◽  
Vol 10 (5) ◽  
pp. 2967-2974 ◽  
Author(s):  
Hong T. T. Nguyen ◽  
Tuan V. Vu ◽  
Van Thinh Pham ◽  
Nguyen N. Hieu ◽  
Huynh V. Phuc ◽  
...  

Vertical heterostructures from two or more than two two-dimensional materials are recently considered as an effective tool for tuning the electronic properties of materials and for designing future high-performance nanodevices.


2019 ◽  
Vol 716 ◽  
pp. 155-161 ◽  
Author(s):  
Khang D. Pham ◽  
Nguyen N. Hieu ◽  
Le M. Bui ◽  
Huynh V. Phuc ◽  
Bui D. Hoi ◽  
...  

2021 ◽  
Author(s):  
Thi Nga Do ◽  
Son-Tung Nguyen ◽  
Khang Pham

In this work, by means of the first-principles calculations, we investigate the structural and electronic properties of a two-dimensional ZnGeN2 monolayer as well as the effects of strains and electric...


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