scholarly journals Short and Long-Range Electron Transfer Compete to Determine Free-Charge Yield in Organic Semiconductors

2021 ◽  
Author(s):  
Joshua Carr ◽  
Taylor Allen ◽  
Bryon W. Larson ◽  
Iryna Davydenko ◽  
Raghunath R Dasari ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Electron Transfer ◽  
Long Range ◽  
Organic Semiconductors ◽  
Low Dielectric Constant ◽  
Free Charge ◽  
Low Dielectric ◽  
Frenkel Excitons

Understanding how Frenkel excitons efficiently split to form free-charges in low-dielectric constant organic semiconductors has proven challenging, with many different models proposed in recent years to explain this phenomenon. Here,...

scholarly journals Short and Long-Range Electron Transfer Compete to Determine Free-Charge Yield in Organic Semiconductors

2021 ◽  
Author(s):  
Joshua M. Carr ◽  
Taylor G. Allen ◽  
Bryon W. Larson ◽  
Iryna G. Davydenko ◽  
Raghunath R. Dasari ◽  
...  
Keyword(s):  
Electron Transfer ◽  
Long Range ◽  
Organic Semiconductors ◽  
Free Charge

Concluding remarks

1970 ◽  
Vol 257 (813) ◽  
pp. 265-266 ◽  
Keyword(s):  
Dielectric Constant ◽  
Free Energy ◽  
Catalytic Activity ◽  
Active Site ◽  
Royal Society ◽  
Low Dielectric Constant ◽  
Free Charge ◽  
Low Dielectric ◽  
Activity Of Enzymes

At the conclusion of the Royal Society discussion on lysozyme a little over two years ago, I had to follow Monod and elevate myoglobin and haemoglobin to the rank of honorary enzymes so as to draw my generalizations from three structures rather than a single one. I then suggested that the powerful catalytic activity of enzymes was due to the medium of low dielectric constant provided by their non-polar interior, which allowed strong electrical interactions to take place between the active site and the substrate. The structures of the six additional enzymes which have since been solved have confirmed this view, but they have also shown that it should be broadened. It appears that in the medium of low dielectric constant a free charge introduces a large free energy. To regain stability two alternative devices are open to the enzyme: (1) to compensate the charge internally; (2) to design a system of bonds which transfers the charge to the surface.

Au nanoparticle-doped Co3O4–CoFe2O4@SiO2 as a catalyst for visible-light-driven water oxidation

2018 ◽  
Vol 42 (18) ◽  
pp. 14757-14765 ◽  
Author(s):  
Wenlan Ma ◽  
Hui Li ◽  
Qian Xu ◽  
Yi Zhang ◽  
Wei Wang ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Electron Transfer ◽  
Visible Light ◽  
Water Oxidation ◽  
Transfer Rate ◽  
Au Nanoparticle ◽  
Low Dielectric Constant ◽  
Electron Transfer Rate ◽  
Low Dielectric ◽  
Visible Light Driven

Composites of low dielectric constant SiO2, Au and metal oxide was obtained, it showed higher O2 evolution performance due to enhancing the electron transfer rate.

scholarly journals Short and Long-Range Electron Transfer Compete to Determine Free-Charge Yield in Organic Semiconductors

2021 ◽  
Author(s):  
Joshua Carr ◽  
Taylor Allen ◽  
Bryon Larson ◽  
Iryna Davydenko ◽  
Raghunath Dasari ◽  
...  
Keyword(s):  
Electron Transfer ◽  
Long Range ◽  
Organic Semiconductors ◽  
Free Charge

Structire, Properties, and Process Characteristics of Low-K Materials Prepared by PECVD

1999 ◽  
Vol 565 ◽  
Author(s):  
Y. Shimogaki ◽  
S. W. Lim ◽  
E. G. Loh ◽  
Y. Nakano ◽  
K. Tada ◽  
...  
Keyword(s):  
Growth Rate ◽  
Dielectric Constant ◽  
Gas Flow ◽  
Structural Changes ◽  
Silicon Oxide ◽  
Reactive Species ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
Step Coverage ◽  
Low K

AbstractLow dielectric constant F-doped silicon oxide films (SiO:F) can be prepared by adding fluorine source, like as CF4 to the conventional PECVD processes. We could obtain SiO:F films with dielectric constant as low as 2.6 from the reaction mixture of SiH4/N2 O/CF4. The structural changes of the oxides were sensitively detected by Raman spectroscopy. The three-fold ring and network structure of the silicon oxides were selectively decreased by adding fluorine into the film. These structural changes contribute to the decrease ionic polarization of the film, but it was not the major factor for the low dielectric constant. The addition of fluorine was very effective to eliminate the Si-OH in the film and the disappearance of the Si-OH was the key factor to obtain low dielectric constant. A kinetic analysis of the process was also performed to investigate the reaction mechanism. We focused on the effect of gas flow rate, i.e. the residence time of the precursors in the reactor, on growth rate and step coverage of SiO:F films. It revealed that there exists two species to form SiO:F films. One is the reactive species which contributes to increase the growth rate and the other one is the less reactive species which contributes to have uniform step coverage. The same approach was made on the PECVD process to produce low-k C:F films from C2F4, and we found ionic species is the main precursor to form C:F films.

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