Growing CdS flag from a wire through in situ controlling the catalyst

CrystEngComm ◽  
2021 ◽  
Author(s):  
Beibei Dai ◽  
Chao Fan ◽  
Xing Xu ◽  
Zhuodong Qi ◽  
Qin Xiao ◽  
...  
Keyword(s):  
Vapor Deposition ◽  
Physical Vapor Deposition

Flag-like CdS microstructures was achieved via a physical vapor deposition (PVD) route. A CdS flag was grown from a wire through in situ changing the position of Pb catalyst from...

A novel method for in-situ synthesized TiN coatings by plasma spray-physical vapor deposition

2018 ◽  
Vol 217 ◽  
pp. 127-130 ◽  
Author(s):  
Chen Song ◽  
Min Liu ◽  
Zi-Qian Deng ◽  
Shao-Peng Niu ◽  
Chun-Ming Deng ◽  
...  
Keyword(s):  
Plasma Spray ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Tin Coatings ◽  
Novel Method

Growth and characterization of Ge nanostructures on Si(111)

2001 ◽  
Vol 696 ◽  
Author(s):  
F. Rosei ◽  
N. Motta ◽  
A. Sgarlata ◽  
A. Balzarotti
Keyword(s):  
Scanning Probe Microscopy ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Misfit Strain ◽  
Contact Angles ◽  
Scanning Probe ◽  
Wetting Layer ◽  
Reconstructed Surfaces

AbstractScanning Probe Microscopy (SPM) in situ is used to study the evolution of Ge islands grown by Physical Vapor Deposition on Si(111) 7×7 reconstructed surfaces. Large 3D islands form on the Wetting Layer (WL), with average lateral dimension in the range 200 - 500 nm. The statistical distribution of the island shapes has been analyzed, showing that three types of shapes coexist under certain conditions: strained, partially relaxed and ripened (atoll-like) islands. We measured the contact angles of the island facets, and observed the depletion of the substrate around the ripened islands. These features are attributed to the misfit strain, which is partially relieved by interdiffusion of Si into the Ge layers.

Microstructure and Coarsening in Mazed Bicrystal Films of Au Grown on Ge Substrates

2000 ◽  
Vol 648 ◽  
Author(s):  
Tamara Radetic ◽  
Ulrich Dahmen
Keyword(s):  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Morphological Analysis ◽  
Grain Shape ◽  
Strong Dependence ◽  
Si Substrates ◽  
Transmission Electron ◽  
Grain Orientations ◽  
Quantitative Morphological Analysis

AbstractThin films of gold (Au) were grown on single crystal germanium (Ge) or silicon (Si) substrates using physical vapor deposition (PVD). The resulting microstructure was that of a mazed bicrystal in which two equivalent grain orientations, related to each other by a 90° rotation, are arranged in a morphology of irregularly shaped, convoluted grains. Quantitative morphological analysis showed a strong dependence of grain shape on size, with larger grains being more convoluted and smaller grains more compact. The evolution of grain size, anisotropy and shape during heating in the temperature range from 300-340 °C was studied by in-situ transmission electron microscopy (TEM).

Thermodynamic Constraints for the In Situ MOCVD Growth of Superconducting Tl-Ba-Ca-Cu-O Thin Films

1993 ◽  
Vol 335 ◽  
Author(s):  
William L. Holstein
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Mocvd Growth ◽  
Metal Organic ◽  
Deposition Processes ◽  
Organic Chemical Vapor Deposition

AbstractIn spite of several attempts, superconducting Tl-Ba-Ca-Cu-O thin films have not been successfully prepared in situ by metal organic chemical vapor deposition (MOCVD). Preparation of a phase by MOCVD requires that it be thermodynamically stable with respect to its decomposition into volatile species and other condensed phases. For MOCVD growth of Tl-Ba- Ca-Cu-O compounds in the presence of oxygen from reagents containing only C-H or C-H-O ligands, Tl2O(g) and TIOH(g) exhibit appreciable volatility. If reagents with ligands containing fluorine are used, the formation of volatile TIF(g) must also be considered. Thermodynamic data for these materials are compiled, and thermodynamic relationships between these gases, H2O(g) and HF(g) are established. The thermodynamic stability of TIOH(g) and TIF(g) makes the in situ growth of Tl-Ba-Ca-Cu-O compounds by MOCVD more difficult than their in situ growth by physical vapor deposition processes, for which Tl2O(g) is the only volatile TI-containing species present.

Comparison of Electron-Beam Physical Vapor Deposition and Plasma-Spray Physical Vapor Deposition Thermal Barrier Coating Properties Using Synchrotron X-Ray Diffraction

2019 ◽  
Author(s):  
Matthew Northam ◽  
Lin Rossmann ◽  
Brooke Sarley ◽  
Bryan Harder ◽  
Jun-Sang Park ◽  
...  
Keyword(s):  
Electron Beam ◽  
High Temperature ◽  
Plasma Spray ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Thermal Barrier ◽  
Jet Engines ◽  
X Ray Diffraction ◽  
X Ray

Abstract Electron-beam physical vapor deposition (EB-PVD) is widely used for the application of thermal barrier coatings (TBCs) to turbine blades in jet engines. An emerging method, plasma-spray physical vapor deposition (PS-PVD), is a hybrid technique whereby coatings can be applied via the liquid phase to form lamellar microstructures or via the vapor to form columnar microstructures similar to that of EB-PVD. In this study, PS-PVD and conventional EB-PVD coated samples of a columnar configuration were prepared and thermally cycled to 300 and 600 cycles. These samples were subsequently characterized in-situ, under thermal load using synchrotron x-rays. From the high-resolution x-ray diffraction (XRD) patterns, the residual and in-situ strain in the TGO layer was obtained during a thermal cycle. At high temperature, the TGO layer for both deposition methods displayed a constant near zero-strain for all samples as anticipated. In the samples with 300 thermal cycles, both deposition methods showed similar strain profiles in the TGO layer. For samples with 600 cycles, PS-PVD samples showed a more significant strain relief in the TGO at room temperature compared to similarly cycled EB-PVD samples. This could explain the coating lifetime performance between the two deposition methods. The findings support ongoing efforts to tune the manufacturing of PS-PVD coatings towards the goal of meeting or exceeding the performance of currently used coatings on jet engines. This will pave the way for more affordable high temperature coating alternatives that meet durability needs.

Selective self-assembly of semi-metal straight and branched nanorods on inert substrates

2017 ◽  
Author(s):  
X.-S. Wang ◽  
S.S. Kushvaha ◽  
X. Chu ◽  
H. Zhang ◽  
Z. Yan ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Vapor Deposition ◽  
Self Assembly ◽  
Physical Vapor Deposition ◽  
The Self ◽  
Scanning Tunnelling Microscope ◽  
Drift Correction ◽  
Atomic Structures ◽  
Scanning Tunnelling

This article discusses the selective self-assembly of semi-metal straight and branched nanorods on inert substrates. In particular, it describes antimony (Sb) nanorods and bismuth (Bi) nanobelts on inert substrates by physical vapor deposition in vacuum without using any catalyst and nanoscale template. After describing the experimental and drift correction procedures, the article reviews previous studies of semi-metal growth on inert substrates. It then measures the surface morphology and atomic structures of self-assembled Sb nanorods and Bi nanobelts using an in-situ scanning tunnelling microscope (STM) in ultrahigh vacuum (UHV). Based on these STM data, a mechanism for the self-assembly of straight and branched semi-metal nanorods is proposed.

In Situ Rapid Thermal Nitridation of Collimated Titanium by Physical Vapor Deposition as a Blanket Tungsten Barrier

1994 ◽  
Vol 33 (Part 1, No. 1B) ◽  
pp. 466-469 ◽  
Author(s):  
Osamu Yamazaki ◽  
Kazuyo Nakamura ◽  
Hiromi Sakamoto ◽  
Shigeo Ohnishi ◽  
Keizo Sakiyama
Keyword(s):  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Thermal Nitridation

In situ observation of fast surface dynamics during the vapor-deposition of a stable organic glass

Soft Matter ◽  
2020 ◽  
Vol 16 (48) ◽  
pp. 10860-10864 ◽  
Author(s):  
E. Thoms ◽  
J. P. Gabriel ◽  
A. Guiseppi-Elie ◽  
M. D. Ediger ◽  
R. Richert
Keyword(s):  
Surface Layer ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Film Growth ◽  
Organic Glass ◽  
In Situ Observation ◽  
Surface Dynamics ◽  
Dielectric Measurements

Dielectric measurements record the film growth during physical vapor deposition, as well as thickness and dynamics associated with the fast surface layer.

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