scholarly journals Multilevel storage and photoinduced-reset memory by an inorganic perovskite quantum-dot/polystyrene floating-gate organic transistor

RSC Advances ◽  
2020 ◽  
Vol 10 (70) ◽  
pp. 43225-43232
Author(s):  
Risheng Jin ◽  
Jin Wang ◽  
Keli Shi ◽  
Beibei Qiu ◽  
Lanchao Ma ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Retention Time ◽  
Memory Window ◽  
Floating Gate ◽  
Inorganic Perovskite ◽  
Storage Function ◽  
Organic Transistor ◽  
Multilevel Storage ◽  
Large Memory

A novel floating-gate organic transistor memory with photoinduced-reset and multilevel storage function is demonstrated. The device has a large memory window (≈90 V), ultrahigh memory on/off ratio (over 107) and long retention time (over 10 years).

Reduced Multilayer Graphene Oxide Floating Gate Flash Memory With Large Memory Window and Robust Retention Characteristics

2013 ◽  
Vol 34 (9) ◽  
pp. 1136-1138 ◽  
Author(s):  
Abhishek Mishra ◽  
Amritha Janardanan ◽  
Manali Khare ◽  
Hemen Kalita ◽  
Anil Kottantharayil
Keyword(s):  
Graphene Oxide ◽  
Flash Memory ◽  
Memory Window ◽  
Floating Gate ◽  
Multilayer Graphene ◽  
Large Memory ◽  
Retention Characteristics

scholarly journals High-Performance Non-Volatile InGaZnO Based Flash Memory Device Embedded with a Monolayer Au Nanoparticles

Nanomaterials ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 1101
Author(s):  
Muhammad Naqi ◽  
Nayoung Kwon ◽  
Sung Hyeon Jung ◽  
Pavan Pujar ◽  
Hae Won Cho ◽  
...  
Keyword(s):  
Retention Time ◽  
Photoelectron Spectroscopy ◽  
Flash Memory ◽  
High Performance ◽  
Memory Window ◽  
Floating Gate ◽  
Semiconductor Layer ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
Gate Layer

Non-volatile memory (NVM) devices based on three-terminal thin-film transistors (TFTs) have gained extensive interest in memory applications due to their high retained characteristics, good scalability, and high charge storage capacity. Herein, we report a low-temperature (<100 °C) processed top-gate TFT-type NVM device using indium gallium zinc oxide (IGZO) semiconductor with monolayer gold nanoparticles (AuNPs) as a floating gate layer to obtain reliable memory operations. The proposed NVM device exhibits a high memory window (ΔVth) of 13.7 V when it sweeps from −20 V to +20 V back and forth. Additionally, the material characteristics of the monolayer AuNPs (floating gate layer) and IGZO film (semiconductor layer) are confirmed using transmission electronic microscopy (TEM), atomic force microscopy (AFM), and x-ray photoelectron spectroscopy (XPS) techniques. The memory operations in terms of endurance and retention are obtained, revealing highly stable endurance properties of the device up to 100 P/E cycles by applying pulses (±20 V, duration of 100 ms) and reliable retention time up to 104 s. The proposed NVM device, owing to the properties of large memory window, stable endurance, and high retention time, enables an excellent approach in futuristic non-volatile memory technology.

Hybrid Floating Gate Memory with a Large Memory Window Based on the Sandwich Structure

2021 ◽  
Author(s):  
Qingyan Li ◽  
Tengteng Li ◽  
Yating Zhang ◽  
Hongliang Zhao ◽  
Jie Li ◽  
...  
Keyword(s):  
Sandwich Structure ◽  
Memory Window ◽  
Floating Gate ◽  
Floating Gate Memory ◽  
Large Memory

Large memory window and long charge-retention time in ultranarrow-channel silicon floating-dot memory

2003 ◽  
Vol 82 (11) ◽  
pp. 1787-1789 ◽  
Author(s):  
Masumi Saitoh ◽  
Eiji Nagata ◽  
Toshiro Hiramoto
Keyword(s):  
Retention Time ◽  
Memory Window ◽  
Charge Retention ◽  
Large Memory

scholarly journals Multifunctional molybdenum disulfide flash memory using a PEDOT:PSS floating gate

2021 ◽  
Vol 13 (1) ◽  
Author(s):  
Seongin Hong ◽  
Junwoo Park ◽  
Jung Joon Lee ◽  
Sunjong Lee ◽  
Kyungho Yun ◽  
...  
Keyword(s):  
Molybdenum Disulfide ◽  
Flash Memory ◽  
Floating Gate ◽  
Bending Test ◽  
Light Illumination ◽  
Transition Metal Dichalcogenide ◽  
Large Memory ◽  
Temperature Solution ◽  
Multilevel Memory ◽  
Floating Layer

AbstractTwo-dimensional transition metal dichalcogenide materials (TMDs), such as molybdenum disulfide (MoS2), have been considered promising candidates for future electronic applications owing to their electrical, mechanical, and optical properties. Here, we present a new concept for multifunctional MoS2 flash memory by combining a MoS2 channel with a PEDOT:PSS floating layer. The proposed MoS2 memory devices exhibit a switching ratio as high as 2.3 × 107, a large memory window (54.6 ± 7.80 V), and high endurance (>1,000 cycles). As the PEDOT:PSS film enables a low-temperature solution-coating process and mechanical flexibility, the proposed P-memory can be embedded on a polyimide substrate over a rigid silicon substrate, offering high mechanical endurance (over 1,000 cycle bending test). Furthermore, both MoS2 and PEDOT:PSS have a bandgap that is desirable in optoelectronic memory operation, where charge carriers are stored differently in the floating gate depending on light illumination. As a new application that combines photodiodes and memory functions, we demonstrate multilevel memory programming based on light intensity and color.

Quantum Dot Gate (QDG) Quantum Dot Channel (QDC) Multistate Logic Non-Volatile Memory (NVM) with High-K Dielectric HfO2 Barriers

2020 ◽  
Vol 29 (01n04) ◽  
pp. 2040001
Author(s):  
N. R. Butterfield ◽  
R. Mays ◽  
B. Khan ◽  
R. Gudlavalleti ◽  
F. C. Jain
Keyword(s):  
Quantum Dot ◽  
Hafnium Oxide ◽  
Experimental Testing ◽  
Memory Cell ◽  
Floating Gate ◽  
Carrier Injection ◽  
High K ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
High K Dielectric

This paper presents the theory, fabrication and experimental testing results for a multiple state Non-Volatile Memory (NVM), comprised of hafnium oxide high-k dielectric tunnel and gate barriers as well as a Silicon Quantum Dot Superlattice (QDSL) implemented for the floating gate and inversion channel (QDG) and (QDC) respectively. With the conclusion of Moore’s Law for conventional transistor fabrication, regarding the minimum gate size, current efforts in memory cell research and development are focused on bridging the gap between the conventions of the past sixty years and the future of computing. One method of continuing the increasing chip density is to create multistate devices capable of storing and processing additional logic states beyond 1 and 0. Replacing the silicon nitride floating gate of a conventional Flash NVM with QDSL gives rise to minibands that result in greater control over charge levels stored in the QDG and additional intermediate states. Utilizing Hot Carrier Injection (HCI) programming, for the realized device, various magnitudes of gate voltage pulses demonstrated the ability to accurately control the charge levels stored in the QDG. This corresponds to multiple threshold voltage shifts allowing detection of multiple states during read operations.

Nanographene charge trapping memory with a large memory window

2015 ◽  
Vol 26 (45) ◽  
pp. 455704 ◽  
Author(s):  
Jianling Meng ◽  
Rong Yang ◽  
Jing Zhao ◽  
Congli He ◽  
Guole Wang ◽  
...  
Keyword(s):  
Charge Trapping ◽  
Memory Window ◽  
Large Memory ◽  
Charge Trapping Memory

Photoelectric Effect of Hybrid Ultraviolet-Sensitized Phototransistors from N-type Organic Semiconductor and All-Inorganic Perovskite Quantum Dot Photosensitizer

Nanoscale ◽  
2021 ◽  
Author(s):  
Shao-Huan Hong ◽  
Shakil N. Afraj ◽  
Ping-Yu Huang ◽  
Yi-Zi Yeh ◽  
Shih-Huang Tung ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Organic Semiconductor ◽  
Light Absorption ◽  
Photoelectric Effect ◽  
Strong Light ◽  
Solution Processed ◽  
Inorganic Perovskite ◽  
Perovskite Quantum Dots ◽  
Low Dimensional

Low-dimensional all-inorganic perovskite quantum dots (QDs) have been increasingly developed as photo-sensing materials in the field of photodetectors because of their strong light-absorption capability and broad bandgap tunability. Here, solution-processed...

Structure optimization of perovskite quantum dot light-emitting diodes

Nanoscale ◽  
2019 ◽  
Vol 11 (11) ◽  
pp. 5021-5029 ◽  
Author(s):  
Qasim Khan ◽  
Alagesan Subramanian ◽  
Guannan Yu ◽  
Khan Maaz ◽  
Delong Li ◽  
...  
Keyword(s):  
Quantum Dot ◽  
High Performance ◽  
Light Emitting Diodes ◽  
Structure Optimization ◽  
Ambient Atmosphere ◽  
Light Emitting ◽  
Inorganic Perovskite

Although all-inorganic perovskite light emitting diodes (PeLED) have satisfactory stability under an ambient atmosphere, producing devices with high performance is challenging.

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