Hybrid Floating Gate Memory with a Large Memory Window Based on the Sandwich Structure

Author(s):  
Qingyan Li ◽  
Tengteng Li ◽  
Yating Zhang ◽  
Hongliang Zhao ◽  
Jie Li ◽  
...  
2013 ◽  
Vol 34 (9) ◽  
pp. 1136-1138 ◽  
Author(s):  
Abhishek Mishra ◽  
Amritha Janardanan ◽  
Manali Khare ◽  
Hemen Kalita ◽  
Anil Kottantharayil

RSC Advances ◽  
2020 ◽  
Vol 10 (70) ◽  
pp. 43225-43232
Author(s):  
Risheng Jin ◽  
Jin Wang ◽  
Keli Shi ◽  
Beibei Qiu ◽  
Lanchao Ma ◽  
...  

A novel floating-gate organic transistor memory with photoinduced-reset and multilevel storage function is demonstrated. The device has a large memory window (≈90 V), ultrahigh memory on/off ratio (over 107) and long retention time (over 10 years).


2009 ◽  
Vol 48 (4) ◽  
pp. 04C153 ◽  
Author(s):  
Kosuke Ohara ◽  
Yukiharu Uraoka ◽  
Takashi Fuyuki ◽  
Ichiro Yamashita ◽  
Toshitake Yaegashi ◽  
...  

2021 ◽  
pp. 108062
Author(s):  
Maksym Paliy ◽  
Tommaso Rizzo ◽  
Piero Ruiu ◽  
Sebastiano Strangio ◽  
Giuseppe Iannaccone

2021 ◽  
Vol 13 (1) ◽  
Author(s):  
Seongin Hong ◽  
Junwoo Park ◽  
Jung Joon Lee ◽  
Sunjong Lee ◽  
Kyungho Yun ◽  
...  

AbstractTwo-dimensional transition metal dichalcogenide materials (TMDs), such as molybdenum disulfide (MoS2), have been considered promising candidates for future electronic applications owing to their electrical, mechanical, and optical properties. Here, we present a new concept for multifunctional MoS2 flash memory by combining a MoS2 channel with a PEDOT:PSS floating layer. The proposed MoS2 memory devices exhibit a switching ratio as high as 2.3 × 107, a large memory window (54.6 ± 7.80 V), and high endurance (>1,000 cycles). As the PEDOT:PSS film enables a low-temperature solution-coating process and mechanical flexibility, the proposed P-memory can be embedded on a polyimide substrate over a rigid silicon substrate, offering high mechanical endurance (over 1,000 cycle bending test). Furthermore, both MoS2 and PEDOT:PSS have a bandgap that is desirable in optoelectronic memory operation, where charge carriers are stored differently in the floating gate depending on light illumination. As a new application that combines photodiodes and memory functions, we demonstrate multilevel memory programming based on light intensity and color.


Author(s):  
Sapan Agarwal ◽  
Diana Garland ◽  
John Niroula ◽  
Robin B. Jacobs-Gedrim ◽  
Alex Hsia ◽  
...  

2013 ◽  
Vol 24 (50) ◽  
pp. 505709 ◽  
Author(s):  
S Manna ◽  
R Aluguri ◽  
A Katiyar ◽  
S Das ◽  
A Laha ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document