Hybrid Floating Gate Memory with a Large Memory Window Based on the Sandwich Structure

2021 ◽  
Author(s):  
Qingyan Li ◽  
Tengteng Li ◽  
Yating Zhang ◽  
Hongliang Zhao ◽  
Jie Li ◽  
...  
Keyword(s):  
Sandwich Structure ◽  
Memory Window ◽  
Floating Gate ◽  
Floating Gate Memory ◽  
Large Memory

Reduced Multilayer Graphene Oxide Floating Gate Flash Memory With Large Memory Window and Robust Retention Characteristics

2013 ◽  
Vol 34 (9) ◽  
pp. 1136-1138 ◽  
Author(s):  
Abhishek Mishra ◽  
Amritha Janardanan ◽  
Manali Khare ◽  
Hemen Kalita ◽  
Anil Kottantharayil
Keyword(s):  
Graphene Oxide ◽  
Flash Memory ◽  
Memory Window ◽  
Floating Gate ◽  
Multilayer Graphene ◽  
Large Memory ◽  
Retention Characteristics

scholarly journals Multilevel storage and photoinduced-reset memory by an inorganic perovskite quantum-dot/polystyrene floating-gate organic transistor

RSC Advances ◽  
2020 ◽  
Vol 10 (70) ◽  
pp. 43225-43232
Author(s):  
Risheng Jin ◽  
Jin Wang ◽  
Keli Shi ◽  
Beibei Qiu ◽  
Lanchao Ma ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Retention Time ◽  
Memory Window ◽  
Floating Gate ◽  
Inorganic Perovskite ◽  
Storage Function ◽  
Organic Transistor ◽  
Multilevel Storage ◽  
Large Memory

A novel floating-gate organic transistor memory with photoinduced-reset and multilevel storage function is demonstrated. The device has a large memory window (≈90 V), ultrahigh memory on/off ratio (over 107) and long retention time (over 10 years).

Floating Gate Memory Based on Ferritin Nanodots with High-kGate Dielectrics

2009 ◽  
Vol 48 (4) ◽  
pp. 04C153 ◽  
Author(s):  
Kosuke Ohara ◽  
Yukiharu Uraoka ◽  
Takashi Fuyuki ◽  
Ichiro Yamashita ◽  
Toshitake Yaegashi ◽  
...  
Keyword(s):  
Floating Gate ◽  
Floating Gate Memory

scholarly journals Single-Poly Floating-Gate Memory Cell Options for Analog Neural Networks

2021 ◽  
pp. 108062
Author(s):  
Maksym Paliy ◽  
Tommaso Rizzo ◽  
Piero Ruiu ◽  
Sebastiano Strangio ◽  
Giuseppe Iannaccone
Keyword(s):  
Neural Networks ◽  
Memory Cell ◽  
Floating Gate ◽  
Floating Gate Memory ◽  
Analog Neural Networks

scholarly journals Multifunctional molybdenum disulfide flash memory using a PEDOT:PSS floating gate

2021 ◽  
Vol 13 (1) ◽  
Author(s):  
Seongin Hong ◽  
Junwoo Park ◽  
Jung Joon Lee ◽  
Sunjong Lee ◽  
Kyungho Yun ◽  
...  
Keyword(s):  
Molybdenum Disulfide ◽  
Flash Memory ◽  
Floating Gate ◽  
Bending Test ◽  
Light Illumination ◽  
Transition Metal Dichalcogenide ◽  
Large Memory ◽  
Temperature Solution ◽  
Multilevel Memory ◽  
Floating Layer

AbstractTwo-dimensional transition metal dichalcogenide materials (TMDs), such as molybdenum disulfide (MoS2), have been considered promising candidates for future electronic applications owing to their electrical, mechanical, and optical properties. Here, we present a new concept for multifunctional MoS2 flash memory by combining a MoS2 channel with a PEDOT:PSS floating layer. The proposed MoS2 memory devices exhibit a switching ratio as high as 2.3 × 107, a large memory window (54.6 ± 7.80 V), and high endurance (>1,000 cycles). As the PEDOT:PSS film enables a low-temperature solution-coating process and mechanical flexibility, the proposed P-memory can be embedded on a polyimide substrate over a rigid silicon substrate, offering high mechanical endurance (over 1,000 cycle bending test). Furthermore, both MoS2 and PEDOT:PSS have a bandgap that is desirable in optoelectronic memory operation, where charge carriers are stored differently in the floating gate depending on light illumination. As a new application that combines photodiodes and memory functions, we demonstrate multilevel memory programming based on light intensity and color.

scholarly journals Using Floating-Gate Memory to Train Ideal Accuracy Neural Networks

2019 ◽  
Vol 5 (1) ◽  
pp. 52-57 ◽  
Author(s):  
Sapan Agarwal ◽  
Diana Garland ◽  
John Niroula ◽  
Robin B. Jacobs-Gedrim ◽  
Alex Hsia ◽  
...  
Keyword(s):  
Neural Networks ◽  
Floating Gate ◽  
Floating Gate Memory

MBE-grown Si and Si1−xGexquantum dots embedded within epitaxial Gd2O3on Si(111) substrate for floating gate memory device

2013 ◽  
Vol 24 (50) ◽  
pp. 505709 ◽  
Author(s):  
S Manna ◽  
R Aluguri ◽  
A Katiyar ◽  
S Das ◽  
A Laha ◽  
...  
Keyword(s):  
Memory Device ◽  
Floating Gate ◽  
Floating Gate Memory
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