Large memory window and long charge-retention time in ultranarrow-channel silicon floating-dot memory

2003 ◽  
Vol 82 (11) ◽  
pp. 1787-1789 ◽  
Author(s):  
Masumi Saitoh ◽  
Eiji Nagata ◽  
Toshiro Hiramoto
Keyword(s):  
Retention Time ◽  
Memory Window ◽  
Charge Retention ◽  
Large Memory

scholarly journals Multilevel storage and photoinduced-reset memory by an inorganic perovskite quantum-dot/polystyrene floating-gate organic transistor

RSC Advances ◽  
2020 ◽  
Vol 10 (70) ◽  
pp. 43225-43232
Author(s):  
Risheng Jin ◽  
Jin Wang ◽  
Keli Shi ◽  
Beibei Qiu ◽  
Lanchao Ma ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Retention Time ◽  
Memory Window ◽  
Floating Gate ◽  
Inorganic Perovskite ◽  
Storage Function ◽  
Organic Transistor ◽  
Multilevel Storage ◽  
Large Memory

A novel floating-gate organic transistor memory with photoinduced-reset and multilevel storage function is demonstrated. The device has a large memory window (≈90 V), ultrahigh memory on/off ratio (over 107) and long retention time (over 10 years).

Reliability of nc-ZnO Embedded ZrHfO High-kNonvolatile Memory Devices Stressed at High Temperatures

2009 ◽  
Vol 1160 ◽  
Author(s):  
Chia-Han Yang ◽  
Yue Kuo ◽  
Chen-Han Lin ◽  
Way Kuo
Keyword(s):  
Nonvolatile Memory ◽  
Breakdown Strength ◽  
Memory Studies ◽  
Memory Window ◽  
Charge Retention ◽  
Mos Capacitors ◽  
High K ◽  
Large Memory ◽  
The Difference ◽  
Large Charge

AbstractThe nanocrystalline ZnO embedded Zr-doped HfO2high-kdielectric has been made into MOS capacitors for nonvolatile memory studies. The device shows a large charge storage density, a large memory window, and a long charge retention time. In this paper, authors investigated the temperature effect on the reliability of this kind of device in the range of 25°C to 175°C. In addition to the trap-assisted conduction, the memory window and the breakdown strength decreased with the increase of the temperature. The high-k film's conductivity increased and the nc-ZnO's charge retention capability decreased with the increase of temperature. The nc-ZnO retained the trapped charges even after the high-k film broke down and eventually lost the charges at a higher voltage. The difference between these two voltages decreased with the increase of the temperature.

Nanographene charge trapping memory with a large memory window

2015 ◽  
Vol 26 (45) ◽  
pp. 455704 ◽  
Author(s):  
Jianling Meng ◽  
Rong Yang ◽  
Jing Zhao ◽  
Congli He ◽  
Guole Wang ◽  
...  
Keyword(s):  
Charge Trapping ◽  
Memory Window ◽  
Large Memory ◽  
Charge Trapping Memory

Fast high-k AIN MONOS memory with large memory window and good retention

2005 ◽  
Author(s):  
C.H. Lai ◽  
C.C. Huang ◽  
K.C. Chiang ◽  
H.L. Kao ◽  
W.J. Chen ◽  
...  
Keyword(s):  
Memory Window ◽  
High K ◽  
Large Memory ◽  
Good Retention

Reduced Multilayer Graphene Oxide Floating Gate Flash Memory With Large Memory Window and Robust Retention Characteristics

2013 ◽  
Vol 34 (9) ◽  
pp. 1136-1138 ◽  
Author(s):  
Abhishek Mishra ◽  
Amritha Janardanan ◽  
Manali Khare ◽  
Hemen Kalita ◽  
Anil Kottantharayil
Keyword(s):  
Graphene Oxide ◽  
Flash Memory ◽  
Memory Window ◽  
Floating Gate ◽  
Multilayer Graphene ◽  
Large Memory ◽  
Retention Characteristics

scholarly journals Large memory window with low operating voltages using Hf 1.5 Gd 2 O 6 charge trapping layer and thin MoS 2 channel

2021 ◽  
Author(s):  
Zhaohao Zhang ◽  
Yaoguang Liu ◽  
Qianhui Wei ◽  
Qingzhu Zhang ◽  
Junjie Li ◽  
...  
Keyword(s):  
Charge Trapping ◽  
Memory Window ◽  
Large Memory

scholarly journals Ferroelectric FETs With 20-nm-Thick HfO2Layer for Large Memory Window and High Performance

2019 ◽  
Vol 66 (9) ◽  
pp. 3828-3833 ◽  
Author(s):  
Halid Mulaosmanovic ◽  
Evelyn T. Breyer ◽  
Thomas Mikolajick ◽  
Stefan Slesazeck
Keyword(s):  
High Performance ◽  
Memory Window ◽  
Large Memory ◽  
20 Nm
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